Patents by Inventor Eun Byul BANG

Eun Byul BANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • III-V-based quantum dot and method of manufacturing same
    Patent number: 12129417
    Abstract: A technology disclosed in the present disclosure provides a Group III-V-based quantum dot including a seed which includes a Group III element, a Group V element, and an active metal having various oxidation numbers and in which a molar ratio of the Group III element and the active metal is 1:3 to 1:30, and a method of manufacturing the same.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: October 29, 2024
    Assignees: DUKSAN NEOLUX CO., LTD., ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Eun Byul Bang, Do Eon Kim, Yun Hee Park, Jong Nam Park, Kang Yong Kim, Yong Hoon Choi
  • SEMICONDUCTOR-NANOPARTICLE-LIGAND COMPLEX, PREPARATION METHOD THEREFOR, PHOTOSENSITIVE RESIN COMPOSITION, OPTICAL FILM, ELECTROLUMINESCENT DIODE AND ELECTRONIC DEVICE
    Publication number: 20240008304
    Abstract: Embodiments of the present invention relate to a semiconductor-nanoparticle-ligand complex, a preparation method therefor, a photosensitive resin composition, an optical film, an electroluminescent diode and an electronic device, and, more specifically, can provide: a semiconductor-nanoparticle-ligand complex comprising a ligand represented by chemical formula 1, and thus has excellent compatibility; an optical film with excellent efficiency; an electroluminescent diode; and an electronic device.
    Type: Application
    Filed: November 18, 2021
    Publication date: January 4, 2024
    Inventors: See Maek LEE, Yum Hee PARK, Eun Byul BANG, Do Eon KIM, Tae Yun KIM, Jong Moon SHIN, Chang Min LEE, Hyung Dong LEE, Hyun Ji OH
  • III-V-BASED QUANTUM DOT AND METHOD OF MANUFACTURING SAME
    Publication number: 20220154071
    Abstract: A technology disclosed in the present disclosure provides a Group III-V-based quantum dot including a seed which includes a Group III element, a Group V element, and an active metal having various oxidation numbers and in which a molar ratio of the Group III element and the active metal is 1:3 to 1:30, and a method of manufacturing the same.
    Type: Application
    Filed: April 7, 2020
    Publication date: May 19, 2022
    Inventors: Eun Byul BANG, Do Eon KIM, Yun Hee PARK, Jong Nam PARK, Kang Yong KIM, Yong Hoon Choi