Patents by Inventor Eun Gyeong Jang

Eun Gyeong Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8138077
    Abstract: A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a first conductive layer formed over the tunnel insulating layer, a dielectric layer formed on the first conductive layer and the isolation layer, a first trench penetrating the dielectric layer on the isolation layer to separate parts of the dielectric layer, a second trench formed on the isolation layer and expanded from the first trench, and a second conductive layer formed over the dielectric layer to fill the first and second trenches.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: March 20, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Whee Won Cho, Nam Woo So, Cheol Mo Jeong, Eun Gyeong Jang, legal representative, Jung Geun Kim
  • Publication number: 20090283818
    Abstract: A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a first conductive layer formed over the tunnel insulating layer, a dielectric layer formed on the first conductive layer and the isolation layer, the dielectric layer having a groove for exposing the isolation layer, a trench formed on the isolation layer and exposed through the groove, and a second conductive layer formed over the dielectric layer the trench.
    Type: Application
    Filed: May 13, 2009
    Publication date: November 19, 2009
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Whee Won Cho, Nam Woo So, Cheol Mo Jeong, Jung Geun Kim, Eun Gyeong Jang