Abstract: A plurality of chip regions are defined over a surface of a semiconductor substrate and separated from one another by a scribe region. A plurality of main pads are disposed in the chip regions and a test element group is disposed at the scribe region. The test element group is electrically connected to the main pads through interconnections.

Abstract: In a fuse circuit including programmable fuses in a semiconductor integrated circuit, the fuses store specific information related to the semiconductor integrated circuit, such as redundancy information, wafer lot number, die lot number, and die position on the wafer, etc. The fuse circuit utilizes a plurality of fuses for storing identical bit information. Consequently, in the case where a fuse has not been cut out correctly, the fuse circuit can reduce programming defects, whereby defect generation rates are remarkably decreased.

Abstract: An SOI MOSFET having a body contact for preventing the floating body effect is provided. The body contact is a trench perforating a body and a buried oxide layer to a semiconductor substrate. The trench is filled with a conductive material to electrically connect the body to the semiconductor substrate. Impurity ions are implanted into a predetermined region of the semiconductor substrate in contact with the lower portion of the body contact to form an ohmic contact. In the SOI MOSFET, an additional metal interconnection line is not needed to supply power to the body. Also, malfunction of a circuit due to stray capacitance of a contact can be prevented.

Abstract: A plurality of chip regions are defined over a surface of a semiconductor substrate and separated from one another by a scribe region. A plurality of main pads are disposed in the chip regions and a test element group is disposed at the scribe region. The test element group is electrically connected to the main pads through interconnections.

Abstract: An SOI MOSFET having a body contact for preventing the floating body effect is provided. The body contact is a trench perforating a body and a buried oxide layer to a semiconductor substrate. The trench is filled with a conductive material to electrically connect the body to the semiconductor substrate. Impurity ions are implanted into a predetermined region of the semiconductor substrate in contact with the lower portion of the body contact to form an ohmic contact. In the SOI MOSFET, an additional metal interconnection line is not needed to supply power to the body. Also, malfunction of a circuit due to stray capacitance of a contact can be prevented.

Abstract: An SOI MOSFET having a body contact for preventing the floating body effect is provided. The body contact is a trench perforating a body and a buried oxide layer to a semiconductor substrate. The trench is filled with a conductive material to electrically connect the body to the semiconductor substrate. Impurity ions are implanted into a predetermined region of the semiconductor substrate in contact with the lower portion of the body contact to form an ohmic contact. In the SOI MOSFET, an additional metal interconnection line is not needed to supply power to the body. Also, malfunction of a circuit due to stray capacitance of a contact can be prevented.

Abstract: In a fuse circuit including programmable fuses in a semiconductor integrated circuit, the fuses store specific information related to the semiconductor integrated circuit, such as redundancy information, wafer lot number, die lot number, and die position on the wafer, etc. While a conventional semiconductor integrated circuit utilizes a single fuse for storing one bit of specific information, the fuse circuit in the present invention utilizes a plurality of fuses for storing identical bit information. Consequently, in the case where a fuse has not been cut out correctly, the fuse circuit of the present invention can reduce programming defects, whereby defect generation rates are remarkably decreased.

Abstract: A method for providing a fuse apparatus for a semiconductor device includes providing at least one fuse portion of the fuse apparatus with at least two fuses connected in series. A circuit, such as a redundancy decoder, is adapted to utilize a fuse apparatus including at least one fuse portion having a plurality of fuses connected in series. The fuse apparatus is preferably provided with polysilicon fuses which are cut using a laser beam cutting device. The fuse apparatus provides an increased probability of accurately cutting a fuse portion of a fuse means necessary to effect a proper repair of the circuit and to improve the semiconductor circuit operational reliability.