Patents by Inventor Eun Hee Cho

Eun Hee Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10114542
    Abstract: A method for operating of an electronic device is provided. The method includes detecting a palm touch on a touch screen of the electronic device while performing a first function of the electronic device, and performing a second function of the electronic device based on the detected palm touch on the touch screen of the electronic device.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: October 30, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Hee Cho, Seung-Eun Lee
  • Publication number: 20160026322
    Abstract: A method for operating of an electronic device is provided. The method includes detecting a palm touch on a touch screen of the electronic device while performing a first function of the electronic device, and performing a second function of the electronic device based on the detected palm touch on the touch screen of the electronic device.
    Type: Application
    Filed: April 23, 2015
    Publication date: January 28, 2016
    Inventors: Eun-Hee CHO, Seung-Eun LEE
  • Patent number: 8644062
    Abstract: A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: February 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ik-Soo Kim, Sung-Lae Cho, Do-Hyung Kim, Hyeong-Geun An, Dong-Hyun Im, Eun-Hee Cho
  • Patent number: 8625325
    Abstract: A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.
    Type: Grant
    Filed: August 10, 2010
    Date of Patent: January 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeong-Geun An, Ik-Soo Kim, Hee-Ju Shin, Dong-Hyun Im, Sung-Lae Cho, Eun-Hee Cho
  • Patent number: 8558348
    Abstract: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: October 15, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gyuhwan Oh, Dong-Hyun Im, Soonoh Park, Dongho Ahn, Young-Lim Park, Eun-Hee Cho
  • Patent number: 8502184
    Abstract: A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: August 6, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeong-Geun An, Sung-Lae Cho, Ik-Soo Kim, Dong-Hyun Im, Eun-Hee Cho
  • Publication number: 20120305884
    Abstract: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.
    Type: Application
    Filed: August 13, 2012
    Publication date: December 6, 2012
    Inventors: Gyuhwan Oh, Dong-Hyun Im, Soonoh Park, Dongho Ahn, Young-Lim Park, Eun-Hee Cho
  • Patent number: 8278206
    Abstract: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.
    Type: Grant
    Filed: October 29, 2009
    Date of Patent: October 2, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gyuhwan Oh, Dong-Hyun Im, Soonoh Park, Dongho Ahn, Young-Lim Park, Eun-Hee Cho
  • Patent number: 8237141
    Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by InXSbYTeZ or, alternatively, with substitutions of silicon and/or tin for indium, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: August 7, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-jin Kang, Jun-soo Bae, Doo-hwan Park, Eun-hee Cho
  • Publication number: 20110272663
    Abstract: A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.
    Type: Application
    Filed: May 6, 2011
    Publication date: November 10, 2011
    Inventors: Hyeong-Geun An, Sung-Lae Cho, Ik-Soo Kim, Dong-Hyun Im, Eun-Hee Cho
  • Patent number: 8039635
    Abstract: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy} benzamidine 2 ethansulfonic acid salt, a process for the preparation thereof, a pharmaceutical composition for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same, and an oral formulation for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same are described.
    Type: Grant
    Filed: April 21, 2008
    Date of Patent: October 18, 2011
    Assignee: Dong Wha Pharmaceutical Co., Ltd.
    Inventors: Jin Soo Lee, Soon Ki Cho, Seoung Kyoo Sung, Young Goo Jin, Jae Hoon Park, Bo Kyung Kim, Ja Hyun Cha, Eun Hee Cho, Jei Man Ryu
  • Publication number: 20110049457
    Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by InXSbYTeZ or, alternatively, with substitutions of silicon and/or tin for indium, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer.
    Type: Application
    Filed: January 19, 2010
    Publication date: March 3, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Myung-jin Kang, Jun-soo Bae, Doo-hwan Park, Eun-hee Cho
  • Publication number: 20110032752
    Abstract: A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.
    Type: Application
    Filed: June 21, 2010
    Publication date: February 10, 2011
    Inventors: Ik-Soo Kim, Do-Hyung KIM, Sung-Lae CHO, Hyeong-Geun AN, Dong-Hyun IM, Eun-Hee CHO
  • Publication number: 20110032753
    Abstract: A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.
    Type: Application
    Filed: August 10, 2010
    Publication date: February 10, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeong-Geun An, Ik-Soo Kim, Hee-Ju Shin, Dong-Hyun Im, Sung-Lae Cho, Eun-Hee Cho
  • Publication number: 20100317853
    Abstract: The present invention relates to a novel imatinib camsylate and a method for preparing the same. Imatinib camsylate according to the present invention has a faster absorption rate and higher absorption concentration in terms of pharmacokinetics, and further has excellent water solubility, as compared to commercially available imatinib mesylate.
    Type: Application
    Filed: February 1, 2008
    Publication date: December 16, 2010
    Inventors: Yoon Seok Oh, Jae Kyung Lim, Dong Hyuk Shin, Seung Kyoo Seong, Sang Ho Lee, Hak Soo Lee, Eun Hee Cho, Jei Man Ryu
  • Publication number: 20100113538
    Abstract: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine 2 ethansulfonic acid salt, a process for the preparation thereof, a pharmaceutical composition for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same, and an oral formulation for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same are described.
    Type: Application
    Filed: April 21, 2008
    Publication date: May 6, 2010
    Applicant: DONG WHA PHARMACEUTICAL CO., LTD.
    Inventors: Jin Soo Lee, Soon Ki Cho, Seoung Kyoo Sung, Young Goo Jin, Jae Hoon Park, Bo Kyung Kim, Ja Hyun Cha, Eun Hee Cho, Jei Man Ryu
  • Publication number: 20100112774
    Abstract: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.
    Type: Application
    Filed: October 29, 2009
    Publication date: May 6, 2010
    Inventors: Gyuhwan Oh, Dong-Hyun Im, Soonoh Park, Dongho Ahn, Young-Lim Park, Eun-Hee Cho
  • Patent number: 7585979
    Abstract: This invention relates to an improved method of preparing N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine.
    Type: Grant
    Filed: July 5, 2005
    Date of Patent: September 8, 2009
    Assignee: Dong Wha Pharmaceutical Ind. Co., Ltd.
    Inventors: Jin Soo Lee, Seok Hoon Ahn, Young Goo Jin, Jae Hoon Park, Dong Hyuk Shin, Eun Hee Cho, Hwan Bong Chang, Young Ho Jung
  • Publication number: 20090176846
    Abstract: Disclosed is an N-Hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy} benzamidine 2 methansulfonic acid salt, which has excellent bioavailability. Also disclosed are a method of preparing the compound and a pharmaceutical composition comprising the compound.
    Type: Application
    Filed: November 22, 2005
    Publication date: July 9, 2009
    Inventors: Jei Man Ryu, Jin Soo Lee, Dong Hyuk Shin, Seung Kyoo Seong, Soon Ki Cho, Chan Seok Jeon, Young Goo Jin, Ki Young Lee, Se Hyun Jung, Eun Hee Cho, Seok Hoon Ahn
  • Publication number: 20080125596
    Abstract: This invention relates to an improved method of preparing N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine.
    Type: Application
    Filed: July 5, 2005
    Publication date: May 29, 2008
    Inventors: Jin Soo Lee, Seok Hoon Ahn, Young Goo Jin, Jae Hoon Park, Dong Hyuk Shin, Eun Hee Cho, Hwan Bong Chang, Young Ho Jung