Patents by Inventor Eun Hee Cho
Eun Hee Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10114542Abstract: A method for operating of an electronic device is provided. The method includes detecting a palm touch on a touch screen of the electronic device while performing a first function of the electronic device, and performing a second function of the electronic device based on the detected palm touch on the touch screen of the electronic device.Type: GrantFiled: April 23, 2015Date of Patent: October 30, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Hee Cho, Seung-Eun Lee
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Publication number: 20160026322Abstract: A method for operating of an electronic device is provided. The method includes detecting a palm touch on a touch screen of the electronic device while performing a first function of the electronic device, and performing a second function of the electronic device based on the detected palm touch on the touch screen of the electronic device.Type: ApplicationFiled: April 23, 2015Publication date: January 28, 2016Inventors: Eun-Hee CHO, Seung-Eun LEE
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Patent number: 8644062Abstract: A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.Type: GrantFiled: June 21, 2010Date of Patent: February 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ik-Soo Kim, Sung-Lae Cho, Do-Hyung Kim, Hyeong-Geun An, Dong-Hyun Im, Eun-Hee Cho
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Patent number: 8625325Abstract: A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.Type: GrantFiled: August 10, 2010Date of Patent: January 7, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeong-Geun An, Ik-Soo Kim, Hee-Ju Shin, Dong-Hyun Im, Sung-Lae Cho, Eun-Hee Cho
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Patent number: 8558348Abstract: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.Type: GrantFiled: August 13, 2012Date of Patent: October 15, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Gyuhwan Oh, Dong-Hyun Im, Soonoh Park, Dongho Ahn, Young-Lim Park, Eun-Hee Cho
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Patent number: 8502184Abstract: A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.Type: GrantFiled: May 6, 2011Date of Patent: August 6, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeong-Geun An, Sung-Lae Cho, Ik-Soo Kim, Dong-Hyun Im, Eun-Hee Cho
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Publication number: 20120305884Abstract: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.Type: ApplicationFiled: August 13, 2012Publication date: December 6, 2012Inventors: Gyuhwan Oh, Dong-Hyun Im, Soonoh Park, Dongho Ahn, Young-Lim Park, Eun-Hee Cho
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Patent number: 8278206Abstract: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.Type: GrantFiled: October 29, 2009Date of Patent: October 2, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Gyuhwan Oh, Dong-Hyun Im, Soonoh Park, Dongho Ahn, Young-Lim Park, Eun-Hee Cho
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Patent number: 8237141Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by InXSbYTeZ or, alternatively, with substitutions of silicon and/or tin for indium, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer.Type: GrantFiled: January 19, 2010Date of Patent: August 7, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Myung-jin Kang, Jun-soo Bae, Doo-hwan Park, Eun-hee Cho
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Publication number: 20110272663Abstract: A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.Type: ApplicationFiled: May 6, 2011Publication date: November 10, 2011Inventors: Hyeong-Geun An, Sung-Lae Cho, Ik-Soo Kim, Dong-Hyun Im, Eun-Hee Cho
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Patent number: 8039635Abstract: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy} benzamidine 2 ethansulfonic acid salt, a process for the preparation thereof, a pharmaceutical composition for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same, and an oral formulation for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same are described.Type: GrantFiled: April 21, 2008Date of Patent: October 18, 2011Assignee: Dong Wha Pharmaceutical Co., Ltd.Inventors: Jin Soo Lee, Soon Ki Cho, Seoung Kyoo Sung, Young Goo Jin, Jae Hoon Park, Bo Kyung Kim, Ja Hyun Cha, Eun Hee Cho, Jei Man Ryu
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Publication number: 20110049457Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by InXSbYTeZ or, alternatively, with substitutions of silicon and/or tin for indium, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer.Type: ApplicationFiled: January 19, 2010Publication date: March 3, 2011Applicant: Samsung Electronics Co., Ltd.Inventors: Myung-jin Kang, Jun-soo Bae, Doo-hwan Park, Eun-hee Cho
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Publication number: 20110032752Abstract: A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.Type: ApplicationFiled: June 21, 2010Publication date: February 10, 2011Inventors: Ik-Soo Kim, Do-Hyung KIM, Sung-Lae CHO, Hyeong-Geun AN, Dong-Hyun IM, Eun-Hee CHO
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Publication number: 20110032753Abstract: A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.Type: ApplicationFiled: August 10, 2010Publication date: February 10, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyeong-Geun An, Ik-Soo Kim, Hee-Ju Shin, Dong-Hyun Im, Sung-Lae Cho, Eun-Hee Cho
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Publication number: 20100317853Abstract: The present invention relates to a novel imatinib camsylate and a method for preparing the same. Imatinib camsylate according to the present invention has a faster absorption rate and higher absorption concentration in terms of pharmacokinetics, and further has excellent water solubility, as compared to commercially available imatinib mesylate.Type: ApplicationFiled: February 1, 2008Publication date: December 16, 2010Inventors: Yoon Seok Oh, Jae Kyung Lim, Dong Hyuk Shin, Seung Kyoo Seong, Sang Ho Lee, Hak Soo Lee, Eun Hee Cho, Jei Man Ryu
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Publication number: 20100113538Abstract: N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine 2 ethansulfonic acid salt, a process for the preparation thereof, a pharmaceutical composition for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same, and an oral formulation for preventing and treating osteoporosis, bone fractures or allergic inflammatory diseases, comprising the same are described.Type: ApplicationFiled: April 21, 2008Publication date: May 6, 2010Applicant: DONG WHA PHARMACEUTICAL CO., LTD.Inventors: Jin Soo Lee, Soon Ki Cho, Seoung Kyoo Sung, Young Goo Jin, Jae Hoon Park, Bo Kyung Kim, Ja Hyun Cha, Eun Hee Cho, Jei Man Ryu
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Publication number: 20100112774Abstract: A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.Type: ApplicationFiled: October 29, 2009Publication date: May 6, 2010Inventors: Gyuhwan Oh, Dong-Hyun Im, Soonoh Park, Dongho Ahn, Young-Lim Park, Eun-Hee Cho
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Patent number: 7585979Abstract: This invention relates to an improved method of preparing N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine.Type: GrantFiled: July 5, 2005Date of Patent: September 8, 2009Assignee: Dong Wha Pharmaceutical Ind. Co., Ltd.Inventors: Jin Soo Lee, Seok Hoon Ahn, Young Goo Jin, Jae Hoon Park, Dong Hyuk Shin, Eun Hee Cho, Hwan Bong Chang, Young Ho Jung
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Publication number: 20090176846Abstract: Disclosed is an N-Hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy} benzamidine 2 methansulfonic acid salt, which has excellent bioavailability. Also disclosed are a method of preparing the compound and a pharmaceutical composition comprising the compound.Type: ApplicationFiled: November 22, 2005Publication date: July 9, 2009Inventors: Jei Man Ryu, Jin Soo Lee, Dong Hyuk Shin, Seung Kyoo Seong, Soon Ki Cho, Chan Seok Jeon, Young Goo Jin, Ki Young Lee, Se Hyun Jung, Eun Hee Cho, Seok Hoon Ahn
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Publication number: 20080125596Abstract: This invention relates to an improved method of preparing N-hydroxy-4-{5-[4-(5-isopropyl-2-methyl-1,3-thiazol-4-yl)phenoxy]pentoxy}benzamidine.Type: ApplicationFiled: July 5, 2005Publication date: May 29, 2008Inventors: Jin Soo Lee, Seok Hoon Ahn, Young Goo Jin, Jae Hoon Park, Dong Hyuk Shin, Eun Hee Cho, Hwan Bong Chang, Young Ho Jung