Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Abstract: The present invention relates to an in vivo radiation amount measuring instrument. An in vivo radiation amount measuring instrument according to the present invention comprises: a main body elongated along an in vivo inserting direction and capable of supplying a fluid; an expanding part having at least a portion thereof fixed or connected to the main body and capable of being expanded and contracted by means of the outflow/inflow of the fluid; and a radiation measuring part disposed on the expanding part and measuring the amount of surface radiation distribution on in vivo tissue which the expanding part contacts by expanding.

Abstract: In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.

Abstract: In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.

Abstract: The present invention relates to an in vivo radiation amount measuring instrument. An in vivo radiation amount measuring instrument according to the present invention comprises: a main body elongated along an in vivo inserting direction and capable of supplying a fluid; an expanding part having at least a portion thereof fixed or connected to the main body and capable of being expanded and contracted by means of the outflow/inflow of the fluid; and a radiation measuring part disposed on the expanding part and measuring the amount of surface radiation distribution on in vivo tissue which the expanding part contacts by expanding.