Abstract: Provided is a display apparatus including a modular display panel that includes a plurality of displays disposed in a matrix form and respectively including a display panel including a pixel array in which pixels including a plurality of inorganic light emitting elements are disposed in a plurality of row lines, sub-pixel circuits respectively corresponding to inorganic light emitting elements of the pixel array, a driver configured to drive the sub-pixel circuits, a sensor configured to sense a current flowing in a driving transistor included in the sub-pixel circuits and output sensing data corresponding to the sensed current, and a processor configured to correct the image data voltage applied to the sub-pixel circuits based on the sensing data, and a timing controller configured to provide a first start signal to a driver of a first display and a second start signal to a driver of a second display.

Abstract: Disclosed is a display apparatus. The display apparatus includes: display modules, each of which includes: a display panel composed of inorganic light emitting elements arranged in row lines, and sub-pixel circuits respectively corresponding to the inorganic light emitting elements; and a driver configured to drive the sub-pixel circuits in an order of the row lines based on a start signal provided from a timing controller. The timing controller is configured to: provide a first start signal to the driver of a first display module to control the inorganic light emitting elements to sequentially emit light from a first row line to a last row line, and provide a second start signal to the driver of a second display module to control the inorganic light emitting elements to sequentially emit light following an emission order of the inorganic light emitting elements included in the last row line of the first display module.

Abstract: Provided is an ultrasonic generator with an adjustable ultrasonic focusing depth. The ultrasonic generator with an adjustable ultrasonic focusing depth includes a cartridge housing in which an ultrasound generation portion generating ultrasonic waves is provided, a hand piece in which the cartridge housing is detachably mounted, the hand piece having a first actuator thereinside, and a main shaft to which the ultrasound generation portion is coupled so as to reciprocate in a horizontal direction, parallel to the bottom of the cartridge housing and a vertical direction, perpendicular to the bottom of the cartridge housing. One end of the main shaft is coupled to one end of the first actuator of the hand piece, and an other end of the main shaft is located inside the cartridge housing. The hand piece includes an adjustment portion adjusting an ultrasonic focusing depth of the ultrasound generation portion.

Abstract: A method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that divides the upper multi-layered stack into dummy stacks, and forming an asymmetric stepped trench that is extended downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack, wherein forming the asymmetric stepped trench includes forming a first stepped sidewall that is defined at an edge of the pad stack, and forming a second stepped sidewall that is defined at an edge of the dummy pad stack and occupies less area than the first stepped sidewall.

Abstract: A method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that divides the upper multi-layered stack into dummy stacks, and forming an asymmetric stepped trench that is extended downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack, wherein forming the asymmetric stepped trench includes forming a first stepped sidewall that is defined at an edge of the pad stack, and forming a second stepped sidewall that is defined at an edge of the dummy pad stack and occupies less area than the first stepped sidewall.

Abstract: The present invention relates to a chrome compound composed of non-coordinating anions and a trivalent chrome cation, a reactant of the chrome compound and a bidentate ligand, an ethylene oligomerization reaction catalyst system using the chrome compound and the reactant, and a method for preparing an ethylene oligomer using the catalyst system. Through the above conformation, the present invention can selectively produce 1-hexene and 1-octene with high activity while omitting the use of methylaluminoxane (MAO), and can provide an ethylene oligomerization process more suitable for mass production.

Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.

Abstract: A method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that divides the upper multi-layered stack into dummy stacks, and forming an asymmetric stepped trench that is extended downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack, wherein forming the asymmetric stepped trench includes forming a first stepped sidewall that is defined at an edge of the pad stack, and forming a second stepped sidewall that is defined at an edge of the dummy pad stack and occupies less area than the first stepped sidewall.

Abstract: The present invention relates to a chrome compound composed of non-coordinating anions and a trivalent chrome cation, a reactant of the chrome compound and a bidentate ligand, an ethylene oligomerization reaction catalyst system using the chrome compound and the reactant, and a method for preparing an ethylene oligomer using the catalyst system. Through the above conformation, the present invention can selectively produce 1-hexene and 1-octene with high activity while omitting the use of methylaluminoxane (MAO), and can provide an ethylene oligomerization process more suitable for mass production.

Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.

Abstract: A deposition mask assembly includes a frame including a first opening portion and a second opening portion spaced apart from each other in a first direction, a first split mask group including a plurality of first split masks arranged on the first opening portion in a second direction crossing the first direction, and a second split mask group including a plurality of second split masks arranged on the second opening portion in the second direction, wherein a boundary between adjacent first split masks in the second direction and a boundary between adjacent second split masks in the second direction are at different positions.

Abstract: A deposition mask assembly includes a frame including a first opening portion and a second opening portion spaced apart from each other in a first direction, a first split mask group including a plurality of first split masks arranged on the first opening portion in a second direction crossing the first direction, and a second split mask group including a plurality of second split masks arranged on the second opening portion in the second direction, wherein a boundary between adjacent first split masks in the second direction and a boundary between adjacent second split masks in the second direction are at different positions.

Abstract: A deposition mask assembly includes a frame including a first opening portion and a second opening portion spaced apart from each other in a first direction, a first split mask group including a plurality of first split masks arranged on the first opening portion in a second direction crossing the first direction, and a second split mask group including a plurality of second split masks arranged on the second opening portion in the second direction, wherein a boundary between adjacent first split masks in the second direction and a boundary between adjacent second split masks in the second direction are at different positions.

Abstract: An organic light emitting diode according to the present disclosure includes a first electrode, a second electrode overlapping the first electrode, and an emission layer disposed between the first electrode and the second electrode. The second electrode includes a bottom region and a top region. The bottom region includes a MgAg alloy including more Mg than Ag. The top region includes a AgMg alloy including more Ag than Mg.

Abstract: The present invention relates to an apparatus and a method for treating cancer using a discontinuous fractional alternative electric field, and more particularly, to an apparatus and a method for treating cancer using a discontinuous fractional alternative electric field capable of providing the same treatment effect on tumor while minimizing an effect on normal tissues by reducing time for which an electric field is applied over the existing electric field treatment. According to the exemplary embodiments of the present invention, the discontinuous fractional alternative electric field shows the same effect as applying the continuous electric field to the cancer cells while reducing the effect on the normal cells, and as a result the method for treating cancer using an optimized alternative electric field may be constructed by the treatment using the discontinuous fractional alternative electric field.

Abstract: An organic light emitting diode according to the present disclosure includes a first electrode, a second electrode overlapping the first electrode, and an emission layer disposed between the first electrode and the second electrode. The second electrode includes a bottom region and a top region. The bottom region includes a MgAg alloy including more Mg than Ag. The top region includes a AgMg alloy including more Ag than Mg.

Abstract: A deposition mask assembly includes a frame including a first opening portion and a second opening portion spaced apart from each other in a first direction, a first split mask group including a plurality of first split masks arranged on the first opening portion in a second direction crossing the first direction, and a second split mask group including a plurality of second split masks arranged on the second opening portion in the second direction, wherein a boundary between adjacent first split masks in the second direction and a boundary between adjacent second split masks in the second direction are at different positions.

Abstract: A mirror display apparatus includes: a display unit disposed on a first substrate of a display substrate; and a mirror substrate facing the display substrate. The mirror substrate includes: a mirror pattern provided in plural on a second substrate facing the first substrate with respect to the display unit; an organic layer facing the first substrate with respect to the display unit; and a mirror layer extending continuously between the mirror patterns and the organic layer.