Abstract: A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).

Abstract: A display device includes a light blocking layer positioned on a substrate and including a first portion and a second portion having a thickness greater than a thickness of the first portion; a buffer layer positioned above the light blocking layer; a semiconductor layer positioned over the buffer layer and including a source region, a channel region, and a drain region; a gate insulating layer positioned over the semiconductor layer; a gate electrode positioned over the gate insulating layer; an interlayer insulating layer positioned over the gate electrode, and including a first opening overlapping the second portion of the light blocking layer in a plan view and a second opening overlapping the source region of the semiconductor layer in a plan view; and a dummy gate electrode positioned on a side surface of the first opening.

Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.

Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.

Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

Abstract: A display device according to some embodiments includes: a substrate; a first transistor and a second transistor disposed on the substrate and spaced apart from each other; a first electrode connected to one of the first transistor and the second transistor; a second electrode overlapping the first electrode; and a light emitting layer between the first electrode and the second electrode, wherein the first transistor may include: a first semiconductor layer on the substrate; a first gate electrode on the first semiconductor layer; and a first source electrode and a first drain electrode connected to the first semiconductor layer, and the second transistor may include: a second semiconductor layer on the substrate; a second gate electrode on the second semiconductor layer; and a second source electrode and a second drain electrode connected to the second semiconductor layer, and the first gate electrode and the second semiconductor layer may be on the same layer.

Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.

Abstract: Provided are methods of detecting a Diameter spoofing attack. According to an embodiment, the method comprises, obtaining a normal International Mobile Subscriber Identity (IMSI) from a packet of a Diameter S6a protocol transmitted from a Mobile Management Entity (MME) to a Home Subscriber Server (HSS) of a home network, adding a record comprising the normal IMSI to a session table, obtaining an Insert Subscriber Data Request (IDR) message of the Diameter S6a protocol and determining a category of the IDR message.

Abstract: The present invention relates to a novel recombinant batroxobin mixture, a hemostatic composition comprising the same, and a method for preparing the same. According to the present invention, the hemostatic composition of the present invention has an excellent hemostatic effect by suppressing rebleeding, and maintains activity thereof even when prepared in a solid form, and thus, the composition of the present invention can be easily used by being applied as a topical hemostatic agent.

Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.

Abstract: Provided is an Internet protocol (IP) generation method. The method is performed by an IP generation apparatus comprising one or more processors and memory and includes: forming a plurality of initialized partial numbers by dividing a decimal number indicating a count of IP addresses that can be generated; changing the partial numbers according to a predetermined rule; generating an IP decimal number by linking the changed partial numbers; generating a random IP address from the IP decimal number; and generating a plurality of different random IP addresses with improved time efficiency, by sequentially repeating the changing of the partial numbers, the generating of the IP decimal number and the generating of the random IP address.

Abstract: Provided are a method and an apparatus for identifying computer system information which process banner information of an open port of a computer system, create a CPE tree by analyzing a CPE dictionary, and search keywords of respective levels of the CPE tree in a banner and generate one or more CPEs based on the CPE tree observing a format of the CPE dictionary to select CPEs which most match information of an operating system or an application program of a specific computer system among various CPE candidates and rapidly and easily identify CPE type vulnerability information which can interlock with CVE vulnerability information.

Abstract: Provided are a method, apparatus and system for converting vulnerability information collected from various sources of vulnerability information into a format that can be easily shared.

Abstract: There are provided an apparatus for collecting vulnerability information of a computer system and a method thereof. The method includes: downloading a vulnerability file including formal vulnerability data configured in a predetermined format from a vulnerability database; classify the formal vulnerability data by performing file parsing for the vulnerability file on the basis of the predetermined format ; classify informal vulnerability data included in the source code by performing source code parsing for a source code of a web page and formalizing the informal vulnerability data on the basis of a result of the classification; and storing the formal vulnerability data and the formalized informal vulnerability data in a field of a vulnerability table on the basis of a result of the classification.

Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.

Abstract: A device information gathering method is provided. The device information gathering method includes: allowing a device information gathering apparatus to transmit a packet to a randomly generated Internet Protocol (IP) address and to receive a syn-ack packet as a response; allowing the device information gathering apparatus to parse the syn-ack packet and thus to extract Transmission Control Protocol (TCP)/IP fields; and allowing the device information gathering apparatus to compare the TCP/IP fields and an OS fingerprint rule, which is in JavaScript Object Notation (JSON) format, and thus to generate an OS fingerprint of the randomly generated IP address, wherein the OS fingerprint rule stores Operating Systems (OSs) and TCP/IP field values corresponding to versions of the OSs as attribute-value pairs.

Abstract: Provided is an Internet protocol (IP) generation method. The method is performed by an IP generation apparatus comprising one or more processors and memory and includes: forming a plurality of initialized partial numbers by dividing a decimal number indicating a count of IP addresses that can be generated; changing the partial numbers according to a predetermined rule; generating an IP decimal number by linking the changed partial numbers; generating a random IP address from the IP decimal number; and generating a plurality of different random IP addresses with improved time efficiency, by sequentially repeating the changing of the partial numbers, the generating of the IP decimal number and the generating of the random IP address.

Abstract: The present invention relates to a novel recombinant batroxobin mixture, a hemostatic composition comprising the same, and a method for preparing the same. According to the present invention, the hemostatic composition of the present invention has an excellent hemostatic effect by suppressing rebleeding, and maintains activity thereof even when prepared in a solid form, and thus, the composition of the present invention can be easily used by being applied as a topical hemostatic agent.