Patents by Inventor Eun-Hye Ko

Eun-Hye Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240399338
    Abstract: The present invention relates to an eco-friendly super-absorbent carboxymethyl cellulose polymer and a preparation method therefor, wherein the eco-friendly super-absorbent carboxymethyl cellulose polymer of the present invention is prepared by crosslinking carboxymethyl cellulose using an electron beam and thus has excellent biodegradability, and the polymer is free of toxic materials or microplastics and exhibits high absorbency and thus is suitable for use in sanitary products such as sanitary pads and diapers.
    Type: Application
    Filed: August 24, 2022
    Publication date: December 5, 2024
    Applicant: INERTIA INC.
    Inventors: Hyo Yi KIM, Ji Hye PARK, Eun Bie KO, Seung Min LEE
  • Publication number: 20240341132
    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
    Type: Application
    Filed: June 17, 2024
    Publication date: October 10, 2024
    Inventors: Yeon Hong KIM, Eun Hye KO, Eun Hyun KIM, Kyoung Won LEE, Sun Hee LEE, Jun Hyung LIM
  • Patent number: 12075665
    Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.
    Type: Grant
    Filed: June 10, 2021
    Date of Patent: August 27, 2024
    Assignee: Samsung Display Co., Ltd.
    Inventors: Kyoung Won Lee, Eun Hye Ko, Yeon Hong Kim, Eun Hyun Kim, Sun Hee Lee, Jun Hyung Lim
  • Publication number: 20240246940
    Abstract: The present invention relates to a heteroaryl derivative compound and a use thereof. The heteroaryl derivative of the present invention exhibits excellent inhibitory activity against HER2 and EGFR, and thus can be effectively used as a therapeutic agent for HER2- and/or EGFR-associated diseases.
    Type: Application
    Filed: April 8, 2022
    Publication date: July 25, 2024
    Inventors: Yi Kyung KO, Jin Hee PARK, Yeong Deok LEE, Hye Rim IM, Kyun Eun KIM, Dong Keun HWANG, Ah Reum HAN, Su Been NAM, Myung Hoe HEO, Eun Hwa KO, Hwan Geun CHOI, Sung Hwan KIM, Hong Ryul JUNG, Ji Hye YOO
  • Patent number: 12016211
    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
    Type: Grant
    Filed: January 30, 2023
    Date of Patent: June 18, 2024
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yeon Hong Kim, Eun Hye Ko, Eun Hyun Kim, Kyoung Won Lee, Sun Hee Lee, Jun Hyung Lim
  • Publication number: 20240121998
    Abstract: A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).
    Type: Application
    Filed: August 8, 2023
    Publication date: April 11, 2024
    Inventors: Sun Hee LEE, Eun Hye KO, Sang Woo SOHN, Jung Hoon LEE, Hyun Mo LEE, Hyun Jun JEONG
  • Publication number: 20240040920
    Abstract: A display device includes a light blocking layer positioned on a substrate and including a first portion and a second portion having a thickness greater than a thickness of the first portion; a buffer layer positioned above the light blocking layer; a semiconductor layer positioned over the buffer layer and including a source region, a channel region, and a drain region; a gate insulating layer positioned over the semiconductor layer; a gate electrode positioned over the gate insulating layer; an interlayer insulating layer positioned over the gate electrode, and including a first opening overlapping the second portion of the light blocking layer in a plan view and a second opening overlapping the source region of the semiconductor layer in a plan view; and a dummy gate electrode positioned on a side surface of the first opening.
    Type: Application
    Filed: June 28, 2023
    Publication date: February 1, 2024
    Applicant: Samsung Display Co., LTD.
    Inventors: Kyoung Won LEE, Eun Hye KO, Yeon Hong KIM, Eun Hyun KIM, Sun Hee LEE
  • Publication number: 20230180545
    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
    Type: Application
    Filed: January 30, 2023
    Publication date: June 8, 2023
    Inventors: Yeon Hong KIM, Eun Hye KO, Eun Hyun KIM, Kyoung Won LEE, Sun Hee LEE, Jun Hyung LIM
  • Patent number: 11573275
    Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: February 7, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-hye Ko, Je-kook Kim
  • Patent number: 11569328
    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
    Type: Grant
    Filed: April 6, 2021
    Date of Patent: January 31, 2023
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yeon Hong Kim, Eun Hye Ko, Eun Hyun Kim, Kyoung Won Lee, Sun Hee Lee, Jun Hyung Lim
  • Publication number: 20220140032
    Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.
    Type: Application
    Filed: June 10, 2021
    Publication date: May 5, 2022
    Inventors: Kyoung Won LEE, Eun Hye KO, Yeon Hong KIM, Eun Hyun KIM, Sun Hee LEE, Jun Hyung LIM
  • Publication number: 20220020837
    Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
    Type: Application
    Filed: April 6, 2021
    Publication date: January 20, 2022
    Inventors: Yeon Hong KIM, Eun Hye KO, Eun Hyun KIM, Kyoung Won LEE, Sun Hee LEE, Jun Hyung LIM
  • Publication number: 20210167125
    Abstract: A display device according to some embodiments includes: a substrate; a first transistor and a second transistor disposed on the substrate and spaced apart from each other; a first electrode connected to one of the first transistor and the second transistor; a second electrode overlapping the first electrode; and a light emitting layer between the first electrode and the second electrode, wherein the first transistor may include: a first semiconductor layer on the substrate; a first gate electrode on the first semiconductor layer; and a first source electrode and a first drain electrode connected to the first semiconductor layer, and the second transistor may include: a second semiconductor layer on the substrate; a second gate electrode on the second semiconductor layer; and a second source electrode and a second drain electrode connected to the second semiconductor layer, and the first gate electrode and the second semiconductor layer may be on the same layer.
    Type: Application
    Filed: July 23, 2019
    Publication date: June 3, 2021
    Inventors: Eun Hyun KIM, Eun Hye KO, Se Ryeong KIM, Eok Su KIM, Sun Hee LEE
  • Publication number: 20210088599
    Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.
    Type: Application
    Filed: December 7, 2020
    Publication date: March 25, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun-hye KO, Je-kook KIM
  • Patent number: 10945117
    Abstract: Provided are methods of detecting a Diameter spoofing attack. According to an embodiment, the method comprises, obtaining a normal International Mobile Subscriber Identity (IMSI) from a packet of a Diameter S6a protocol transmitted from a Mobile Management Entity (MME) to a Home Subscriber Server (HSS) of a home network, adding a record comprising the normal IMSI to a session table, obtaining an Insert Subscriber Data Request (IDR) message of the Diameter S6a protocol and determining a category of the IDR message.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: March 9, 2021
    Assignee: KOREA INTERNET & SECURITY AGENCY
    Inventors: Seong Min Park, Young Kwon Park, Bo Min Choi, Eun Hye Ko, Tae Eun Kim, Jin Hyun Cho, Do Won Kim, Hyung Jin Cho, Hwan Kuk Kim
  • Patent number: 10920210
    Abstract: The present invention relates to a novel recombinant batroxobin mixture, a hemostatic composition comprising the same, and a method for preparing the same. According to the present invention, the hemostatic composition of the present invention has an excellent hemostatic effect by suppressing rebleeding, and maintains activity thereof even when prepared in a solid form, and thus, the composition of the present invention can be easily used by being applied as a topical hemostatic agent.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: February 16, 2021
    Assignee: NC BIT INC.
    Inventors: Jong Tak Kim, Young Seomun, Jin Woo Kim, Sang Woo Kang, Yong Je Woo, Eun Hye Ko
  • Patent number: 10859640
    Abstract: A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: December 8, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-hye Ko, Je-kook Kim
  • Patent number: 10628127
    Abstract: Provided is an Internet protocol (IP) generation method. The method is performed by an IP generation apparatus comprising one or more processors and memory and includes: forming a plurality of initialized partial numbers by dividing a decimal number indicating a count of IP addresses that can be generated; changing the partial numbers according to a predetermined rule; generating an IP decimal number by linking the changed partial numbers; generating a random IP address from the IP decimal number; and generating a plurality of different random IP addresses with improved time efficiency, by sequentially repeating the changing of the partial numbers, the generating of the IP decimal number and the generating of the random IP address.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: April 21, 2020
    Assignee: KOREA INTERNET & SECURITY AGENCY
    Inventors: Hwan Kuk Kim, Tae Eun Kim, Dae Il Jang, Eun Hye Ko, Jee Soo Jurn, Sa Rang Na, Eun Byul Lee
  • Patent number: 10339319
    Abstract: Provided are a method and an apparatus for identifying computer system information which process banner information of an open port of a computer system, create a CPE tree by analyzing a CPE dictionary, and search keywords of respective levels of the CPE tree in a banner and generate one or more CPEs based on the CPE tree observing a format of the CPE dictionary to select CPEs which most match information of an operating system or an application program of a specific computer system among various CPE candidates and rapidly and easily identify CPE type vulnerability information which can interlock with CVE vulnerability information.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: July 2, 2019
    Assignee: KOREA INTERNET & SECURITY AGENCY
    Inventors: Hwan Kuk Kim, Tae Eun Kim, Dae Il Jang, Eun Hye Ko, Jee Soo Jurn, Sa rang Na, Eun Byul Lee
  • Publication number: 20190156042
    Abstract: Provided are a method, apparatus and system for converting vulnerability information collected from various sources of vulnerability information into a format that can be easily shared.
    Type: Application
    Filed: February 7, 2018
    Publication date: May 23, 2019
    Applicant: KOREA INTERNET & SECURITY AGENCY
    Inventors: Hwan Kuk KIM, Tae Eun KIM, Dae Il JANG, Chang Hun YU, Young Nam SON, Eun Hye KO, Sa Rang NA