Patents by Inventor Eun-hye Lee

Eun-hye Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7632093
    Abstract: Provided is a pyrolysis furnace having a gas flowing path controller with an improved structure. The pyrolysis furnace includes: a silicon substrate; a main body of the pyrolysis furnace; a heating unit that is formed around the main body and controls the temperature of the main body; at least one gas supplying tube through which a gas flows into the main body; and a gas flowing path controller that is installed inside the main body and controls the flow of the gas. As a result, controlling and manufacturing of small-sized nanoparticles with excellent characteristics is possible.
    Type: Grant
    Filed: September 6, 2005
    Date of Patent: December 15, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyo-yeol Lee, Eun-hye Lee
  • Publication number: 20090195515
    Abstract: A method of providing a user interface (UI) and a multimedia device on a touch screen, the method including: detecting a first form of touch or a second form of touch on a menu or on a background of the touch screen; and performing a first operation if the first form of touch is detected and a second operation if the second form of touch is detected. Accordingly, the user can select a diverse range of options from menus with greater ease and convenience.
    Type: Application
    Filed: September 4, 2008
    Publication date: August 6, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Eun-hye LEE
  • Publication number: 20090073132
    Abstract: A graphical user interface (GUI) and a multimedia device using the same. The method for providing a graphical user interface (GUI) includes displaying first GUI items selectable by a user on a screen, removing from the screen at least one of the first GUI items displayed on the screen by zooming in or zooming out, and additionally displaying on the screen at least one second GUI item that was not displayed on the screen by zooming in or zooming out. Accordingly, a GUI to provide more convenient manipulation and better visual effect on a small screen can be provided.
    Type: Application
    Filed: April 3, 2008
    Publication date: March 19, 2009
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Eun-hye LEE, Jung-ah Seung
  • Patent number: 7504280
    Abstract: Provided is a nonvolatile memory device and a method of manufacturing the same. The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a fullerene material on the tunneling oxide, a blocking oxide film formed on the floating gate, and a gate electrode formed on the blocking oxide film.
    Type: Grant
    Filed: February 21, 2006
    Date of Patent: March 17, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-ho Khang, Kyo-yeol Lee, Eun-hye Lee, Joo-hyun Lee
  • Publication number: 20080163119
    Abstract: A method for providing a menu and a multimedia device using the method are provided. The method for providing a menu includes converting a menu set including at least one icon displayed on a touch screen into a manipulation set including at least one manipulation icon used to input a command relating to the use of content. Therefore, the method provides for a more easily manipulated menu, which is displayed with superior visual effect on a screen that is relatively small in size by using the menu set capable of conversion into the manipulation set.
    Type: Application
    Filed: August 28, 2007
    Publication date: July 3, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyun-chung KIM, Eun-hye Lee
  • Publication number: 20060216528
    Abstract: The nanoparticle structure includes: a substrate; and nanoparticles formed on the substrate, wherein the nanoparticles include silicide. The method of manufacturing the nanoparticle structure includes: forming an Si source layer to a predetermined thickness; forming nanoparticles using a predetermined metal and silicon; depositing the nanoparticles on the Si source layer; and growing the nanoparticles to form silicide. Nanoparticles having a desired size can be easily obtained by adjusting the thickness of the silicon source layer.
    Type: Application
    Filed: February 15, 2006
    Publication date: September 28, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Joo-hyun Lee, Yoon-ho Khang, Eun-hye Lee
  • Publication number: 20060212976
    Abstract: Provided is a nonvolatile memory device and a method of manufacturing the same. The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a fullerene material on the tunneling oxide, a blocking oxide film formed on the floating gate, and a gate electrode formed on the blocking oxide film.
    Type: Application
    Filed: February 21, 2006
    Publication date: September 21, 2006
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yoon-ho Khang, Kyo-yeol Lee, Eun-hye Lee, Joo-hyun Lee
  • Publication number: 20060193175
    Abstract: The nonvolatile memory device includes a semiconductor substrate on which a source, a drain, and a channel region are formed, a tunneling oxide film formed on the channel region, a floating gate formed of a transition metal oxide (TMO) on the tunneling oxide, a blocking oxide film formed on the floating gate, a gate electrode formed on the blocking oxide film.
    Type: Application
    Filed: February 15, 2006
    Publication date: August 31, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yoon-ho Khang, Eun-hye Lee, Myoung-jae Lee, Sun-ae Seo, Seung-Eon Ahn
  • Publication number: 20060051257
    Abstract: Provided is a pyrolysis furnace having a gas flowing path controller with an improved structure. The pyrolysis furnace includes: a silicon substrate; a main body of the pyrolysis furnace; a heating unit that is formed around the main body and controls the temperature of the main body; at least one gas supplying tube through which a gas flows into the main body; and a gas flowing path controller that is installed inside the main body and controls the flow of the gas. As a result, controlling and manufacturing of small-sized nanoparticles with excellent characteristics is possible.
    Type: Application
    Filed: September 6, 2005
    Publication date: March 9, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyo-yeol Lee, Eun-hye Lee