Abstract: The present invention is a perovskite metal oxide catalyst substituted with metal ions for reducing carbon deposition, a method for producing the same, and a process for performing a methane reforming reaction using this catalyst. The catalyst is produced in which Ni in ionic form is substituted at a portion of the Ti site of SrTiO3, MgTiO3, CaTiO3, or BaTiO3, which is a multi-component metal oxide having a perovskite structure. Then, various methane reforming reactions (steam-methane reforming, dry reforming of methane, catalytic partial oxidation of methane) may be efficiently and economically performed using this catalyst. The nickel-substituted perovskite metal oxide catalyst has a structure in which Ni2+ is substituted in the perovskite lattice structure. Thus, the metal oxide catalyst has advantages in that carbon deposition thereon does not occur, and thus, the catalyst has a high catalytic stability and may be used for a long time.

Abstract: A surface-treated inorganic nanoparticle includes a core including Mania (TiO2); a shell surrounding the core, and including zirconia(ZrO2); and a dispersant including a phosphate functional group, and connected to the shell,

Abstract: A positive electrode active material for a secondary battery includes a lithium composite transition metal oxide including nickel (Ni), cobalt (Co), and manganese (Mn), wherein the lithium composite transition metal oxide has a layered crystal structure of space group R3m, includes the nickel (Ni) in an amount of 60 mol % or less based on a total amount of transition metals, includes the cobalt (Co) in an amount greater than an amount of the manganese (Mn), and is composed of single particles.

Abstract: An encapsulant composition for an optical device; comprises an ethylene/alpha-olefin copolymer having high volume resistance and light transmittance. An encapsulant film for an optical device using the same is also provided.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.

Abstract: An electronic pedal apparatus includes a pad that rectilinearly moves and rotates along a pad guide while being kept in line contact with the pad guide including a shape of an arc when a driver operates the pad, an acceleration signal or a braking signal for a vehicle is generated by operation of the single pad, and a movement direction of the pad at the time of generating the acceleration signal is different from a movement direction of the pad at the time of generating the braking signal.

Abstract: A semiconductor design optimization system that includes: a data base configured to store design data, a training data preprocessing unit configured to preprocess the design data and generate training data, a data learning unit configured to generate a physical property prediction model by training using the training data, a physical property prediction unit configured to generate predicted physical property data including information associated with predicted physical property values for each region of a semiconductor device to be fabricated, wherein the physical property prediction unit is configured to input, into the physical property prediction model, input data including information associated with design drawings of the semiconductor device to be fabricated, and a layout generator configured generate a design layout optimized to distribute the predicted physical property values for each region of the semiconductor device to be fabricated by modifying the design drawings based on the predicted physical

Abstract: Silicon oxide-based negative electrode active materials and negative electrodes for a secondary battery are disclosed. In an embodiment, a negative electrode active material for a secondary battery includes a silicon oxide particle including a metal silicate; and a hydrocarbon coating layer on the silicon oxide particle, wherein a peak Pa in a Fourier transform infrared (FT-IR) spectral analysis of the negative electrode active material is detected in a range from 2880 cm?1 to 2950 cm?1 and a peak Pb in a FT-IR spectral analysis of the negative electrode active material is detected in a range from 2800 cm?1 to 2865 cm?1.

Abstract: An anode active material for a secondary battery includes a carbon-based active material, and silicon-based active material particles doped with magnesium. At least some of the silicon-based active material particles include pores, and a volume ratio of pores having a diameter of 50 nm or less among the pores is 2% or less based on a total volume of the silicon-based active material particles.

Abstract: An embodiment electronic pedal apparatus includes a pedal housing and an accelerator pedal assembly and a brake pedal assembly coupled to the pedal housing and configured to move along different movement trajectories when the accelerator pedal assembly and the brake pedal assembly are operated. In an embodiment, the accelerator pedal assembly is compressed and moved upward when the accelerator pedal assembly is operated, and the brake pedal assembly is compressed and moved downward when the brake pedal assembly is operated.

Abstract: An anode active material for a lithium secondary battery and a lithium secondary battery including the same are provided. The anode active material includes a plurality of composite particles, each composite particle including a silicon-based active material particle including silicon; and a carbon coating layer formed on at least a portion of a surface of the silicon-based active material particle, wherein a relative standard deviation of G/Si peak intensity ratios of a Raman spectrum as defined in Equation 1 measured for each of 50 different composite particles among the plurality of composite particles is 50% or less.

Abstract: The present invention relates to a perovskite metal oxide catalyst substituted with metal ions for reducing carbon deposition, a method for producing the same, and a process for performing a methane reforming reaction using this catalyst. According to the present invention, a novel type of catalyst is produced in which Ni, iron or cobalt in ionic form is substituted at a portion of the Ti site (B-site) of SrTiO3, MgTiO3, CaTiO3 or BaTiO3, which is a multicomponent metal oxide having a perovskite (ABO3) structure. Then, various methane reforming reactions (e.g., steam-methane reforming (SMR), dry reforming of methane (DRM), catalytic partial oxidation of methane (CPOM), etc.) may be efficiently and economically performed using this catalyst. The nickel-substituted perovskite metal oxide catalyst according to the present invention has a structure in which Ni2+, Co2+, Fe2+, Co3+ or Fe3+ is substituted in the perovskite lattice structure.

Abstract: Disclosed is a semiconductor light emitting device comprising at least one semiconductor light emitting chip, with each chip including a plurality of electrodes; a plurality of pads arranged at a designated distance from the plurality of electrodes on a plane, respectively; electrical connections provided on the same plane as the plurality of pads for electrically connecting the electrodes and the pads, respectively; and an encapsulation member for covering the at least one semiconductor light emitting chip.

Abstract: Disclosed is a semiconductor light emitting device comprising: an external substrate; a first semiconductor light emitting device chip provided on the external substrate, comprising a first plurality of semiconductor layers including a first active layer for generating ultraviolet light by recombination of electrons and holes, and a first electrode electrically connected to the first plurality of semiconductor layers; a lens configured to surround the first semiconductor light emitting device chip, the lens serving to refract the ultraviolet light from the first semiconductor light emitting device chip and forming an orientation angle within a predefined range; and, a second semiconductor light emitting device chip provided on the external substrate, the second semiconductor light emitting device comprising a second plurality of semiconductor layers including a second active layer for generating visible light by recombination of electrons and holes, and a second electrode electrically connected to the second

Abstract: Disclosed is a semiconductor light emitting device including: a body with a bottom part having at least one hole formed therein; a semiconductor light emitting device chip to be placed in each of the at least one hole, with the semiconductor light emitting device chip being comprised of a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulating member for covering the semiconductor light emitting device chip, wherein a hole—defining inner face of the bottom part has a plurality of angles of inclination.

Abstract: Disclosed is a sterilization apparatus including: a semiconductor UV (ultraviolet) light emitting diode; and a case including an upper section with an internal space and an entrance opening, a bottom face opposite to the entrance opening, and a lateral face connecting the bottom face and the upper section.

Abstract: Disclosed is a filter arrangement comprising: a first body, into which an inlet of the first container for containing liquid is inserted and coupled together in a sealing manner, the first body including an inlet, an outlet and a lower face formed on the outlet; a second body, into which an inlet of the second container is inserted and coupled together in a sealing manner, the second body including an inlet, an outlet and an upper face formed on the inlet; a passage fluidly connecting the inlet of the first body, the outlet of the first body, the inlet of the second body and the outlet of the second body; a filter provided on the lower face of the first body and the upper face of the second body; and a plurality of raised bumps provided between the filter and the upper face of the second body.

Abstract: Disclosed is a sterilizer for sterilizing a container with ultraviolet rays. The sterilizer includes a light-emitting element including at least one semiconductor light-emitting diode that emits ultraviolet rays directed to the container; a power supply for supplying electrical energy to the light-emitting element; a casing having a main body in which the power supply is provided, and a neck portion lying under the main body, the neck portion being configured to join to the container; and a circuit element for detecting a change in electrical energy of the power supply to control the light-emitting element.

Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer i