Abstract: Disclosed is a chemical-mechanical polishing composition used in a process for chemical-mechanical polishing of silicon oxide layer having severe unevenness with large step-height. The composition includes abrasive particles of metal oxide; and at least one compound(s) selected from the group consisting of amino alcohols, hydroxycarboxylic acid having at least 3 of the total number of carboxylic acid group(s) and hydroxyl group(s) or their salts, or a mixture thereof. A polymeric organic acid, a preservative, a lubricant and a surfactant may be further contained. The composition shortens the vapor-deposition time of a layer to be polished, saves the raw material to be vapor-deposited, shortens the chemical-mechanical polishing time, and saves the slurry employed.

Abstract: The present invention relates to a CMP slurry composition for copper damascene process of semiconductor manufacturing process. The barrier CMP slurry composition for copper damascene process of the present invention does not include an oxidant, so that it exhibits excellent reproducibility of polishing performance, low etching speed, and adequate polishing speed for copper layer, silicon oxide film and Ta-based film. Thus, the slurry composition of the invention has such advantages as easy dishing or erosion removal, excellent dispersion stability, and low scratch level, making it excellent barrier CMP slurry composition for copper damascene process.

Abstract: The present invention relates to a CMP slurry composition for polishing a copper film in a semiconductor device fabricating process. The CMP composition for polishing a substrate comprising copper comprises zeolite, an oxidizer and a complexing agent and a content of the complexing agent is 0.01˜0.8 weight % with respect to an entire weight of the polishing composition.

Abstract: The present invention relates to a novel slurry composition for copper polishing, comprising zeolite which is a porous crystalline material for CMP of copper film in a semiconductor manufacturing process. The slurry composition according to the present invention comprises zeolite, an oxidant and a polish promoting agent and may further comprise a corrosion inhibitor, a surfactant, an aminoalcohol, an antiseptic and a dispersion agent and pH is in a range of 1 to 7. The zeolite slurry according to the present invention has advantages of absorbing and removing metal cation generated in CMP process by using zeolite and having a low level of scratches as the zeolite has micropores therein and thus its hardness is low. The slurry composition using zeolite of the present invention is usable to both first and second step polishing of copper damascene process and particularly useful as the first step polishing slurry for copper.