Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.

Abstract: An intermediate material of a thermoplastic prepreg for a fuel cell separation plate comprises a hydrophobic thermoplastic resin film and a fiber base. The hydrophobic thermoplastic resin film has a degree of crystallization of 1 to 20%, a thickness of 3 to 50 ?m, and (iii) a content of an electroconductive material of 1 to 20 wt. %. The film is laminated on at least one surface of the fiber base. The thermoplastic prepreg for a fuel cell separation plate is manufactured by pressurizing the thermoplastic prepreg intermediate material at a temperature higher than the melting point of the hydrophobic thermoplastic resin film. A fuel cell separation membrane manufactured using the thermoplastic prepreg intermediate material and thermoplastic prepreg is thin and light-weight, and have a good durability.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.

Abstract: A filament web type precursor fabric for an activated carbon fiber fabric is produced by (i) spreading precursor filaments for preparing activated carbon fiber in a web state; and (ii) punching the precursor filaments for preparing activated carbon fiber spread in a web state to entangle the precursor filaments for preparing activated carbon fiber with each other. The filament web type precursor fabric has a structure in which the precursor filaments for preparing activated carbon fiber are spread in a web form and entangled with each other, and has a weight per unit area ranging from 50 to 500 g/m2. An activated carbon fiber fabric manufactured by activating the filament web type precursor fabric contains yarns with improved and uniform durability and crystallinity, and an shows improved performance of forming microfine pores having a diameter of 1 to 2 nm.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.

Abstract: A method for preparing a high quality thermoplastic prepreg, includes: laminating a thermoplastic resin film having a crystallization degree in a range of 1 to 20% on at least one surface of a matrix fiber; and heating the laminate to a higher temperature than a melting point of the film, then, pressing the same. The method uniformly impregnates a matrix fiber with a thermoplastic resin, has a short curing cycle in the formation, and involves no random modification in alignment of fibers in the matrix fiber due to a low crystallization degree of the impregnated thermoplastic resin, thereby increasing rigidity of a formed product and enabling reduction of thickness. Thus produced prepreg has a low weight variation per unit area.

Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.

Abstract: A laser crystallization system, including an output unit configured to generate output laser light, an optical unit configured to split the output laser light into a first laser light and a second laser light, and to process the first laser light to have a crystallization energy density, a moving unit configured to move a target object to be irradiated with the first laser light and the second laser light, a detection unit configured to detect surface information of the target object utilizing the second laser light, and an input unit configured to receive the detected surface information and to transmit a control signal to the output unit and the moving unit, wherein the laser crystallization system is configured to detect the surface information of the target object and to crystallize the target object utilizing only the output laser light.

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Abstract: Disclosed is an activated carbon fiber, more specifically, a filament-type activated carbon fiber that is manufactured by activating a filament-type precursor fiber for the activated carbon fiber and has a strength of 0.01 to 1.0 g/denier so as to have improved durability.

Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.

Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor layer formed on the insulating substrate; a buffer layer formed below the polycrystal semiconductor layer and containing fluorine; a gate electrode overlapping the polycrystal semiconductor layer; a source electrode and a drain electrode overlapping the polycrystal semiconductor layer and separated from each other; and a pixel electrode electrically connected to the drain electrode.

Abstract: A polyacrylonitrile-based precursor fiber for a carbon fiber and a method of producing the polyacrylonitrile-based precursor fiber, wherein the polyacrylonitrile-based precursor fiber includes a conductive carbon material are provided. The conductive carbon material may include at least one selected from the group consisting of carbon black, carbon nanotubes, graphene, and graphene oxide and may be used in an amount of 0.03 to 3.0 wt % based on the total amount of the polyacrylonitrile-based precursor fiber.

Abstract: A laser crystallization system, including an output unit configured to generate output laser light, an optical unit configured to split the output laser light into a first laser light and a second laser light, and to process the first laser light to have a crystallization energy density, a moving unit configured to move a target object to be irradiated with the first laser light and the second laser light, a detection unit configured to detect surface information of the target object utilizing the second laser light, and an input unit configured to receive the detected surface information and to transmit a control signal to the output unit and the moving unit, wherein the laser crystallization system is configured to detect the surface information of the target object and to crystallize the target object utilizing only the output laser light.

Abstract: Disclosed is a method for manufacturing carbon fiber which comprises the use of un-reacted raw material monomers in solution to prepare the precursor fiber for making the carbon fiber, and a relatively short passage period through hydrogen, which reduce production costs and increase returns. The present invention further comprises the carbon fiber precursors made thereby.