Abstract: Proposed are a pentapeptide formed by acetylation of the N-terminus of a peptide consisting of an amino acid sequence represented by SEQ ID NO: 1, a pharmaceutically acceptable salt thereof, and uses thereof. The pentapeptide is stable and effective for inhibition of anticancer drug resistance, inhibition of autophagy in tumor cells, enhancement of immunity, activation of immune cells, promotion of anti-tumor immune response, and/or anticancer therapy.

Abstract: Provided is a catheter to be inserted into an object. The catheter includes a main body having a tubular shape and an expansion layer formed on an outer circumferential surface of the main body, and the expansion layer contains an expandable material which is expanded by contact with a liquid.

Abstract: Provided are embodiments of a method of synthesizing nano scale electrode materials using an ultrafast combustion technique and nano scale electrode materials synthesized using the method. The method does not require a process of annealing reaction products required for synthesis of electrode materials or any other additional processes, such as cleaning, filtering, and drying processes, so that it can take only several seconds to several minutes to obtain a resultant product.

Abstract: Provided are embodiments of a method of synthesizing nano scale electrode materials using an ultrafast combustion technique and nano scale electrode materials synthesized using the method. The method does not require a process of annealing reaction products required for synthesis of electrode materials or any other additional processes, such as cleaning, filtering, and drying processes, so that it can take only several seconds to several minutes to obtain a resultant product.

Abstract: The present invention relates to a yellow phosphor represented by a general formula of A(1-y)3D5-x Ex O12:Cey (wherein: A is at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm; D is at least one element selected from the group consisting of Al, Ga and In; E is at least one element selected from the group consisting of B and Fe; 0?x<0.5; and 0.0001?y<0.5), and a white semiconductor light emitting device incorporating the same. The white semiconductor light emitting device comprises a semiconductor light emitting diode, and a phosphor coating layer. The phosphor coating layer comprises yellow phosphor and optionally zinc selenium-based red phosphor that absorb a portion of light emitted by the semiconductor light emitting diode and emits light of wavelength different from that of the absorbed light and a transparent resin.

Abstract: The present invention relates to a terbium borate-based yellow phosphor, a preparation method thereof, and a white semiconductor light emitting device incorporating the same. The terbium borate-based yellow phosphor of the present invention is represented by the general formula (Tb1-x-y-zREXAy)3DaBbO12:Cez (where, RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb; A is a typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr; D is a typical amphoteric element selected from the group consisting of Al, In and Ga; 0?x<0.5; 0?y<0.5; 0<z<0.5; 0<a<5; and 0<b<5). The white semiconductor light emitting device of the present invention comprises a semiconductor light emitting diode and the yellow phosphor, which absorbs a portion of light emitted by the semiconductor light emitting diode and emits light of wavelength different from that of the absorbed light.

Abstract: The present invention relates to a terbium borate-based yellow phosphor, a preparation method thereof, and a white semiconductor light emitting device incorporating the same. The terbium borate-based yellow phosphor of the present invention is represented by the general formula (Tb1-x-y-zREXAy)3DaBbO12:Cez (where, RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb; A is a typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr; D is a typical amphoteric element selected from the group consisting of Al, In and Ga; 0?x<0.5; 0?y<0.5; 0<z<0.5; 0<a<5; and 0<b<5). The white semiconductor light emitting device of the present invention comprises a semiconductor light emitting diode and the yellow phosphor, which absorbs a portion of light emitted by the semiconductor light emitting diode and emits light of wavelength different from that of the absorbed light.