Abstract: Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.

Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Abstract: Provided is a method of transferring carbon nanotubes formed on a donor substrate to an acceptor substrate which may include vertically forming carbon nanotubes on a first substrate, providing a second substrate, aligning the first substrate with the second substrate so that the carbon nanotubes face the second substrate, and transferring the carbon nanotubes onto the second substrate by pressing the first substrate onto the second substrate.

Abstract: A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0?y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.

Abstract: Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate; (b) filling the pair of cavities with a metal; (c) forming a channel, a source, and a drain by patterning the channel forming portion, the source forming portion, and the drain forming portion in a direction perpendicular to a lengthwise direction of the channel forming portion; (d) sequentially forming a gate oxide layer and a gate metal layer that cover the channel, the source, and the drain on the substrate; and (e) forming a gate electrode corresponding to the channel by patterning the gate metal layer, wherein one of the operations (b) through (e) further comprises forming a Schottky barrier by annealing the substrate.

Abstract: A method of growing single-walled carbon nanotubes. The method may include supplying at least one of an oxidant and an etchant into a vacuum chamber and supplying a source gas into the vacuum chamber to grow carbon nanotubes on a substrate in an oxidant or an etchant atmosphere. The carbon nanotubes may be grown in an H2O plasma atmosphere. The carbon nanotubes may be grown at a temperature less than 500° C.

Abstract: A method for manufacturing ZnO nanowires with a small diameter and increased length and a device comprising the same. The manufacturing method includes: forming a ZnO seed layer containing a hydroxyl group on a substrate; and growing ZnO nanowires on the ZnO seed layer containing the hydroxyl group. Preferably, the ZnO seed layer is a thin ZnO seed layer containing more than 50% of the hydroxyl group.

Abstract: The invention relates to a method and system for providing a search service to a bidirectional broadcasting terminal during program broadcasting. The invention includes providing a search area for a search service on a screen of the broadcasting terminal in response to key input, providing a first search window to display a representative keyword automatically being as an input with a search word based on an identification of the program, providing a second search window adjacent to the first search window to display a program-related search word automatically being as an input with a completion form of a search word, and providing a third search window adjacent to at least one of the first or second search windows and to display a real-time hot-topic search word automatically being as an input. The second and third search windows to provide an extended pop-up window including a modified word of the search word displayed on the respective search window in response to a selection by a user.

Abstract: A method of forming nitrogen-doped or other Group V-doped single-walled nanotubes including: forming a catalyst metal layer on a substrate; loading a substrate having the catalyst metal layer into a reaction chamber; forming an H2O or other plasma atmosphere in a reaction chamber; and forming the nitrogen-doped or other Group V-doped carbon nanotubes on the catalyst metal layer by supplying a carbon or other Group IV precursor and a nitrogen or other Group V precursor into a reaction chamber where a chemical reaction therebetween is generated in the H2O or other plasma atmosphere.

Abstract: Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate; (b) filling the pair of cavities with a metal; (c) forming a channel, a source, and a drain by patterning the channel forming portion, the source forming portion, and the drain forming portion in a direction perpendicular to a lengthwise direction of the channel forming portion; (d) sequentially forming a gate oxide layer and a gate metal layer that cover the channel, the source, and the drain on the substrate; and (e) forming a gate electrode corresponding to the channel by patterning the gate metal layer, wherein one of the operations (b) through (e) further comprises forming a Schottky barrier by annealing the substrate.

Abstract: Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT formed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms.

Abstract: Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate; (b) filling the pair of cavities with a metal; (c) forming a channel, a source, and a drain by patterning the channel forming portion, the source forming portion, and the drain forming portion in a direction perpendicular to a lengthwise direction of the channel forming portion; (d) sequentially forming a gate oxide layer and a gate metal layer that cover the channel, the source, and the drain on the substrate; and (e) forming a gate electrode corresponding to the channel by patterning the gate metal layer, wherein one of the operations (b) through (e) further comprises forming a Schottky barrier by annealing the substrate.

Abstract: A method of selectively removing carbonaceous impurities from carbon nanotubes (CNTs). In an example method, impurities formed on the surface of the CNTs may be removed by a sulfidation reaction between the impurities and sulfur in a sealed space. More specifically, a method of selectively removing only amorphous carbon by which carbon nanotube walls do not react with sulfur and only carbonaceous impurities formed on the surface of the CNTs make sulfidation reaction (C+2S?CS2), that is, a method of selectively removing carbonaceous impurities from the CNTs integrated in a device by sulfidation is provided.

Abstract: A method of selectively removing carbonaceous impurities from carbon nanotubes (CNTs). In an example method, impurities formed on the surface of the CNTs may be removed by a sulfidation reaction between the impurities and sulfur in a sealed space. More specifically, a method of selectively removing only amorphous carbon by which carbon nanotube walls do not react with sulfur and only carbonaceous impurities formed on the surface of the CNTs make sulfidation reaction (C+2S—>CS2), that is, a method of selectively removing carbonaceous impurities from the CNTs integrated in a device by sulfidation is provided.

Abstract: Provided is a method of transferring carbon nanotubes formed on a donor substrate to an acceptor substrate which may include vertically forming carbon nanotubes on a first substrate, providing a second substrate, aligning the first substrate with the second substrate so that the carbon nanotubes face the second substrate, and transferring the carbon nanotubes onto the second substrate by pressing the first substrate onto the second substrate.

Abstract: Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.

Abstract: Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate; (b) filling the pair of cavities with a metal; (c) forming a channel, a source, and a drain by patterning the channel forming portion, the source forming portion, and the drain forming portion in a direction perpendicular to a lengthwise direction of the channel forming portion; (d) sequentially forming a gate oxide layer and a gate metal layer that cover the channel, the source, and the drain on the substrate; and (e) forming a gate electrode corresponding to the channel by patterning the gate metal layer, wherein one of the operations (b) through (e) further comprises forming a Schottky barrier by annealing the substrate.

Abstract: A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0?y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-y layer.