Patents by Inventor Eun-ju CHO
Eun-ju CHO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968990Abstract: The present application relates to creamer comprising vegetable lipids, casein, maltose, phosphates, and allulose.Type: GrantFiled: March 8, 2022Date of Patent: April 30, 2024Assignee: CJ CHEILJEDANG CORPORATIONInventors: Young Mi Lee, Seong Bo Kim, Yang Hee Kim, Seong Jun Cho, Myung Sook Choi, Young Ji Han, Ji Young Choi, Su Jung Cho, Un Ju Jung, Eun Young Kwon
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Publication number: 20240116361Abstract: An electronic pedal apparatus includes a pad that rectilinearly moves and rotates along a pad guide while being kept in line contact with the pad guide including a shape of an arc when a driver operates the pad, an acceleration signal or a braking signal for a vehicle is generated by operation of the single pad, and a movement direction of the pad at the time of generating the acceleration signal is different from a movement direction of the pad at the time of generating the braking signal.Type: ApplicationFiled: March 6, 2023Publication date: April 11, 2024Applicants: Hyundai Motor Company, Kia Corporation, Dong Hee Industrial Co, Ltd.Inventors: Eun Sik KIM, Wi Sang PARK, Jae Hyun CHO, Jung Min LEE, Seong Ju JO
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Patent number: 11953930Abstract: An embodiment electronic pedal apparatus includes a pedal housing and an accelerator pedal assembly and a brake pedal assembly coupled to the pedal housing and configured to move along different movement trajectories when the accelerator pedal assembly and the brake pedal assembly are operated. In an embodiment, the accelerator pedal assembly is compressed and moved upward when the accelerator pedal assembly is operated, and the brake pedal assembly is compressed and moved downward when the brake pedal assembly is operated.Type: GrantFiled: October 20, 2022Date of Patent: April 9, 2024Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DONG HEE INDUSTRIAL CO., LTD.Inventors: Eun Sik Kim, Wi Sang Park, Jae Hyun Cho, Jung Min Lee, Seong Ju Jo
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Publication number: 20240090321Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, an organic electroluminescent device having improved driving voltage, power efficiency and/or lifetime characteristics compared to conventional organic electroluminescent devices can be provided.Type: ApplicationFiled: July 17, 2023Publication date: March 14, 2024Inventors: So-Young JUNG, Hyun-Ju KANG, Sang-Hee CHO, Tae-Jun HAN, Hyo-Nim SHIN, Eun-Joung CHOI
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Patent number: 9257485Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.Type: GrantFiled: February 27, 2014Date of Patent: February 9, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-bae Kim, Kyung-min Kim, Sung-ho Kim, Seung-ryul Lee, Man Chang, Eun-ju Cho, Sae-jin Kim, Chang-jung Kim
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Patent number: 9153778Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.Type: GrantFiled: April 22, 2013Date of Patent: October 6, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-min Kim, Young-bae Kim, Chang-jung Kim, Seung-ryul Lee, Man Chang, Sung-ho Kim, Eun-ju Cho
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Patent number: 9099639Abstract: According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode.Type: GrantFiled: August 8, 2013Date of Patent: August 4, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-min Kim, Young-bae Kim, Chang-jung Kim, Sung-ho Kim, Sae-jin Kim, Seung-ryul Lee, Man Chang, Eun-ju Cho
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Patent number: 9048839Abstract: A two-terminal switching device includes a resistive switching element, a diode, and a resistive circuit. The resistive switching element switches between low and high resistance states based on a switching signal and maintain a switched resistance state until another switching signal is received. The diode is connected to the resistive switching element and blocks the switching signal from being transmitted to an output terminal. The resistive circuit allows the switching signal blocked by the diode to flow to the reference potential.Type: GrantFiled: May 30, 2013Date of Patent: June 2, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung-min Kim, Young-bae Kim, Eun-ju Cho
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Publication number: 20140246643Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.Type: ApplicationFiled: February 27, 2014Publication date: September 4, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Young-bae KIM, Kyung-min KIM, Sung-ho KIM, Seung-ryul LEE, Man CHANG, Eun-ju CHO, Sae-jin KIM, Chang-jung KIM
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Publication number: 20140091856Abstract: A two-terminal switching device includes a resistive switching element, a diode, and a resistive circuit. The resistive switching element switches between low and high resistance states based on a switching signal and maintain a switched resistance state until another switching signal is received. The diode is connected to the resistive switching element and blocks the switching signal from being transmitted to an output terminal. The resistive circuit allows the switching signal blocked by the diode to flow to the reference potential.Type: ApplicationFiled: May 30, 2013Publication date: April 3, 2014Inventors: Kyung-min KIM, Young-bae KIM, Eun-ju CHO
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Publication number: 20140092668Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.Type: ApplicationFiled: April 22, 2013Publication date: April 3, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung-min KIM, Young-bae KIM, Chang-jung KIM, Seung-ryul LEE, Man CHANG, Sung-ho KIM, Eun-ju CHO
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Publication number: 20140042380Abstract: According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode.Type: ApplicationFiled: August 8, 2013Publication date: February 13, 2014Inventors: Kyung-min KIM, Young-bae KIM, Chang-jung KIM, Sung-ho KIM, Sae-jin KIM, Seung-ryul LEE, Man CHANG, Eun-ju CHO