Patents by Inventor Eun-ju CHO

Eun-ju CHO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11968990
    Abstract: The present application relates to creamer comprising vegetable lipids, casein, maltose, phosphates, and allulose.
    Type: Grant
    Filed: March 8, 2022
    Date of Patent: April 30, 2024
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Young Mi Lee, Seong Bo Kim, Yang Hee Kim, Seong Jun Cho, Myung Sook Choi, Young Ji Han, Ji Young Choi, Su Jung Cho, Un Ju Jung, Eun Young Kwon
  • Publication number: 20240116361
    Abstract: An electronic pedal apparatus includes a pad that rectilinearly moves and rotates along a pad guide while being kept in line contact with the pad guide including a shape of an arc when a driver operates the pad, an acceleration signal or a braking signal for a vehicle is generated by operation of the single pad, and a movement direction of the pad at the time of generating the acceleration signal is different from a movement direction of the pad at the time of generating the braking signal.
    Type: Application
    Filed: March 6, 2023
    Publication date: April 11, 2024
    Applicants: Hyundai Motor Company, Kia Corporation, Dong Hee Industrial Co, Ltd.
    Inventors: Eun Sik KIM, Wi Sang PARK, Jae Hyun CHO, Jung Min LEE, Seong Ju JO
  • Patent number: 11953930
    Abstract: An embodiment electronic pedal apparatus includes a pedal housing and an accelerator pedal assembly and a brake pedal assembly coupled to the pedal housing and configured to move along different movement trajectories when the accelerator pedal assembly and the brake pedal assembly are operated. In an embodiment, the accelerator pedal assembly is compressed and moved upward when the accelerator pedal assembly is operated, and the brake pedal assembly is compressed and moved downward when the brake pedal assembly is operated.
    Type: Grant
    Filed: October 20, 2022
    Date of Patent: April 9, 2024
    Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATION, DONG HEE INDUSTRIAL CO., LTD.
    Inventors: Eun Sik Kim, Wi Sang Park, Jae Hyun Cho, Jung Min Lee, Seong Ju Jo
  • Publication number: 20240090321
    Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, an organic electroluminescent device having improved driving voltage, power efficiency and/or lifetime characteristics compared to conventional organic electroluminescent devices can be provided.
    Type: Application
    Filed: July 17, 2023
    Publication date: March 14, 2024
    Inventors: So-Young JUNG, Hyun-Ju KANG, Sang-Hee CHO, Tae-Jun HAN, Hyo-Nim SHIN, Eun-Joung CHOI
  • Patent number: 9257485
    Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-bae Kim, Kyung-min Kim, Sung-ho Kim, Seung-ryul Lee, Man Chang, Eun-ju Cho, Sae-jin Kim, Chang-jung Kim
  • Patent number: 9153778
    Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: October 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-min Kim, Young-bae Kim, Chang-jung Kim, Seung-ryul Lee, Man Chang, Sung-ho Kim, Eun-ju Cho
  • Patent number: 9099639
    Abstract: According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: August 4, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-min Kim, Young-bae Kim, Chang-jung Kim, Sung-ho Kim, Sae-jin Kim, Seung-ryul Lee, Man Chang, Eun-ju Cho
  • Patent number: 9048839
    Abstract: A two-terminal switching device includes a resistive switching element, a diode, and a resistive circuit. The resistive switching element switches between low and high resistance states based on a switching signal and maintain a switched resistance state until another switching signal is received. The diode is connected to the resistive switching element and blocks the switching signal from being transmitted to an output terminal. The resistive circuit allows the switching signal blocked by the diode to flow to the reference potential.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: June 2, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung-min Kim, Young-bae Kim, Eun-ju Cho
  • Publication number: 20140246643
    Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.
    Type: Application
    Filed: February 27, 2014
    Publication date: September 4, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-bae KIM, Kyung-min KIM, Sung-ho KIM, Seung-ryul LEE, Man CHANG, Eun-ju CHO, Sae-jin KIM, Chang-jung KIM
  • Publication number: 20140091856
    Abstract: A two-terminal switching device includes a resistive switching element, a diode, and a resistive circuit. The resistive switching element switches between low and high resistance states based on a switching signal and maintain a switched resistance state until another switching signal is received. The diode is connected to the resistive switching element and blocks the switching signal from being transmitted to an output terminal. The resistive circuit allows the switching signal blocked by the diode to flow to the reference potential.
    Type: Application
    Filed: May 30, 2013
    Publication date: April 3, 2014
    Inventors: Kyung-min KIM, Young-bae KIM, Eun-ju CHO
  • Publication number: 20140092668
    Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.
    Type: Application
    Filed: April 22, 2013
    Publication date: April 3, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung-min KIM, Young-bae KIM, Chang-jung KIM, Seung-ryul LEE, Man CHANG, Sung-ho KIM, Eun-ju CHO
  • Publication number: 20140042380
    Abstract: According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode.
    Type: Application
    Filed: August 8, 2013
    Publication date: February 13, 2014
    Inventors: Kyung-min KIM, Young-bae KIM, Chang-jung KIM, Sung-ho KIM, Sae-jin KIM, Seung-ryul LEE, Man CHANG, Eun-ju CHO