Abstract: An inverter module according to an embodiment of the present invention comprises: a high voltage circuit unit which generates an inverter control voltage and a motor driving voltage by using a first DC voltage; a high voltage circuit pattern which electrically connects the high voltage circuit unit; a low voltage circuit unit which communicates with an external device by using a second DC voltage having a smaller magnitude than the first DC voltage; and a low voltage circuit pattern which electrically connects the low voltage circuit unit. The high voltage circuit pattern and the low voltage circuit pattern are spaced apart from each other.

Abstract: The present disclosure relates to a catalyst for a fuel cell electrode including an active particle which includes a core comprising platinum, a transition metal excluding platinum, and an oxide of a non-transition metal; and a shell disposed on the core and including platinum, wherein the active particle includes platinum and the non-transition metal in a molar ratio of 100:1.80 to 100:4.00, a method of preparing the same, and a fuel cell including the same.

Abstract: An anode active material for a secondary battery includes a carbon-based active material, and silicon-based active material particles doped with magnesium. At least some of the silicon-based active material particles include pores, and a volume ratio of pores having a diameter of 50 nm or less among the pores is 2% or less based on a total volume of the silicon-based active material particles.

Abstract: Silicon oxide-based negative electrode active materials and negative electrodes for a secondary battery are disclosed. In an embodiment, a negative electrode active material for a secondary battery includes a silicon oxide particle including a metal silicate; and a hydrocarbon coating layer on the silicon oxide particle, wherein a peak Pa in a Fourier transform infrared (FT-IR) spectral analysis of the negative electrode active material is detected in a range from 2880 cm?1 to 2950 cm?1 and a peak Pb in a FT-IR spectral analysis of the negative electrode active material is detected in a range from 2800 cm?1 to 2865 cm?1.

Abstract: The present invention relates to a composition for forming a composite polymer film, a method for preparing the composition for forming a composite polymer film, a composite polymer film and a method for preparing the composite polymer film. The composition for forming a composite polymer film comprises: a fluorine-based polymer solution comprising a fluorine-based polymer; and polyvinylidene fluoride nanoparticles dispersed in the fluorine-based polymer solution. The method for preparing the composition for forming a composite polymer film comprises the steps of: preparing a fluorine-based polymer solution comprising a fluorine-based polymer; and dispersing polyvinylidene fluoride nanoparticles in the fluorine-based polymer solution. The composite polymer film comprises: a polymer matrix formed from a fluorine-based polymer; and polyvinylidene fluoride nanoparticles dispersed in the polymer matrix.

Abstract: A display device includes a display panel having a folding axis extending in a first direction; and a panel supporter disposed on a surface of the display panel. The panel supporter includes a first layer including a first base resin and first fiber yarns extending in the first direction and dispersed in the first base resin, a second layer disposed on the first layer, the second layer including a second base resin and second fiber yarns extending in a second direction intersecting the first direction and dispersed in the second base resin, and a third layer disposed on the second layer, the third layer including a third base resin and third fiber yarns extending in the first direction and dispersed in the third base resin.

Abstract: A method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that divides the upper multi-layered stack into dummy stacks, and forming an asymmetric stepped trench that is extended downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack, wherein forming the asymmetric stepped trench includes forming a first stepped sidewall that is defined at an edge of the pad stack, and forming a second stepped sidewall that is defined at an edge of the dummy pad stack and occupies less area than the first stepped sidewall.

Abstract: An image sensing device and an operating method thereof. The image sensing device includes a ramp signal generation circuit suitable for generating a ramp signal which corresponds to an analog gain, based on a main bias voltage, a cascode bias voltage and a plurality of ramp code signals, a bias voltage generation circuit suitable for generating the main bias voltage and the cascode bias voltage according to the analog gain, and a boost circuit suitable for boosting an output terminal of the cascode bias voltage according to the analog gain.

Abstract: A ramp voltage generator includes: a ramping cell array including a plurality of ramping current cells; a calibration cell array including a plurality of calibration current cells; and a current-voltage converter suitable for converting a current supplied from activated ramping current cells among the ramping current cells and activated calibration current cells among the calibration current cells into a voltage to generate a ramp voltage.

Abstract: A ramp voltage generator includes: a ramping cell array including a plurality of ramping current cells; a calibration cell array including a plurality of calibration current cells; and a current-voltage converter suitable for converting a current supplied from activated ramping current cells among the ramping current cells and activated calibration current cells among the calibration current cells into a voltage to generate a ramp voltage.

Abstract: An image sensor comprises a pixel array including a plurality of pixels where a plurality of columns and a plurality of rows are arranged, a read-out circuit generating image data using pixel signals output from pixels corresponding to a row selected from among the plurality of rows, and a plurality of gain adjustment lines provided for every plurality of columns and adjusting gains of pixels of their respective corresponding columns.

Abstract: An image sensing device and an operating method thereof. The image sensing device includes a ramp signal generation circuit suitable for generating a ramp signal which corresponds to an analog gain, based on a main bias voltage, a cascode bias voltage and a plurality of ramp code signals, a bias voltage generation circuit suitable for generating the main bias voltage and the cascode bias voltage according to the analog gain, and a boost circuit suitable for boosting an output terminal of the cascode bias voltage according to the analog gain.

Abstract: A CMOS image sensor includes an active pixel array suitable for generating an active pixel signal, a dummy pixel array suitable for generating a dummy pixel signal, a row driver suitable for controlling the active pixel array and the dummy pixel array to simultaneously operate at a same column, and a correlated double sampling (CDS) array suitable for generating an active sampling signal and a dummy sampling signal, which are sampled from the active pixel signal and the dummy pixel signal by using a correlated double sampling, respectively, based on a first ramp signal and a second ramp signal, and comparing the active sampling signal with the dummy sampling signal.

Abstract: A CMOS image sensor includes an active pixel array suitable for generating an active pixel signal, a dummy pixel array suitable for generating a dummy pixel signal, a row driver suitable for controlling the active pixel array and the dummy pixel array to simultaneously operate at a same column, and a correlated double sampling (CDS) array suitable for generating an active sampling signal and a dummy sampling signal, which are sampled from the active pixel signal and the dummy pixel signal by using a correlated double sampling, respectively, based on a first ramp signal and a second ramp signal, and comparing the active sampling signal with the dummy sampling signal.

Abstract: An image sensor includes: a plurality of image pixels providing a reset signal and a data signal; a signal providing apparatus generating a ramp signal, and sequentially providing the reset signal, the data signal, and the ramp signal; and an analog-to-digital converting apparatus converting the data signal into a digital signal by using a first timing at which the amplitude of the ramp signal is changed based on the amplitude of the reset signal and a second timing at which the amplitude of the ramp signal is changed based on the amplitude of the data signal, wherein the reset signal used to generate the ramp signal and the data signal which has been converted into the data digital signal may be output from the same image pixel.

Abstract: An image sensor includes, inter alia: a first and second capacitors arranged serially between an input terminal and a first node, a first comparing unit connecting to a first reference signal and a connecting node of the first and second capacitors, and an output terminal connecting to the first node wherein the first comparing unit provides first or second preliminary ramp signals on the first node, first and second switches arranged between the first comparing unit and the first capacitor to selectively connect the first capacitor to a ground voltage or the input terminal, a third capacitor connecting to the second capacitor in parallel, a third switch selectively connecting the first node to the third capacitor, a first ramp signal output unit generating a first ramp signal with the first preliminary ramp signal provided, and a second ramp signal output unit generating a second ramp signal using the second preliminary ramp signal.

Abstract: An image sensing device includes, inter alia, a ramp signal generation unit generating a ramp signal that decreases during first and second periods for finding data values corresponding to a pixel signal and an offset value, respectively. The image sensing device also includes a comparison unit compares the pixel signal with the ramp signal during the first period, and compares the ramp signal with an internally generated offset value during the second period. A first counting unit is configured to perform a counting operation during the first period, and a second counting unit configured to latch a count value of the first counting unit as a data value in response to the result of the first comparison operation during the first period, perform a down-count operation from the latched data value in response to the result of the second comparison operation during the second period, and latch a counting result.

Abstract: An image sensor includes, inter alia: a first and second capacitors arranged serially between an input terminal and a first node, a first comparing unit connecting to a first reference signal and a connecting node of the first and second capacitors, and an output terminal connecting to the first node wherein the first comparing unit provides first or second preliminary ramp signals on the first node, first and second switches arranged between the first comparing unit and the first capacitor to selectively connect the first capacitor to a ground voltage or the input terminal, a third capacitor connecting to the second capacitor in parallel, a third switch selectively connecting the first node to the third capacitor, a first ramp signal output unit generating a first ramp signal with the first preliminary ramp signal provided, and a second ramp signal output unit generating a second ramp signal using the second preliminary ramp signal.

Abstract: An image sensing device includes, inter alia, a ramp signal generation unit generating a ramp signal that decreases during first and second periods for finding data values corresponding to a pixel signal and an offset value, respectively. The image sensing device also includes a comparison unit compares the pixel signal with the ramp signal during the first period, and compares the ramp signal with an internally generated offset value during the second period. A first counting unit is configured to perform a counting operation during the first period, and a second counting unit configured to latch a count value of the first counting unit as a data value in response to the result of the first comparison operation during the first period, perform a down-count operation from the latched data value in response to the result of the second comparison operation during the second period, and latch a counting result.