Patents by Inventor Eun Jung YANG
Eun Jung YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12259521Abstract: Provided are a method and system of analyzing ingredients of an artificial rainfall for verification of a cloud seeding effect. As the method and system, which can verify an effect of the artificial rainfall in such a manner that a seeding material becomes different according to each temperature of clouds at a seeding altitude, water sampling from precipitation is performed before and after seeding, and thus the ingredients of a water sample are analyzed using each of a method of analyzing a heavy metal component and a method of analyzing a water-soluble ion component according to a cool cloud and a warm cloud so that whether or not there is a change in each concentration of the ingredients can be determined, are provided, an experiment for the artificial rainfall can more effectively be performed.Type: GrantFiled: February 28, 2022Date of Patent: March 25, 2025Assignee: National Institute of Meteorological SciencesInventors: Hae Jung Koo, Ki Ho Chang, Joo Wan Cha, Hyunjun Hwang, Minhoo Kim, Woon Seon Jung, Jung Mo Ku, Ji Man Park, Miloslav Belorid, Sang Hee Chae, Ha-Young Yang, Chulkyu Lee, Ji Min Woo, Eun Hye Sim, Chang Hee Kang, Jung Min Song
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Patent number: 11659712Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.Type: GrantFiled: April 4, 2022Date of Patent: May 23, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Taehee Lee, Hyunwook Kim, Eun-jung Yang
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Publication number: 20220223621Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.Type: ApplicationFiled: April 4, 2022Publication date: July 14, 2022Inventors: Taehee LEE, Hyunwook KIM, Eun-jung YANG
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Patent number: 11302709Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.Type: GrantFiled: January 2, 2020Date of Patent: April 12, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Taehee Lee, Hyunwook Kim, Eun-Jung Yang
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Publication number: 20200152657Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.Type: ApplicationFiled: January 2, 2020Publication date: May 14, 2020Inventors: Taehee LEE, Hyunwook KIM, Eun-jung YANG
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Patent number: 10572145Abstract: A mobile terminal for one-hand operation mode is provided, the mobile terminal including: a display unit including a touch screen; a sensor unit sensing a motion; and a controller, in response to at least one of a touch input applied to the touch screen and a motion sensed by the sensor unit, executing an one-hand operation mode to control a size or a position of a screen displayed on the display unit.Type: GrantFiled: October 28, 2016Date of Patent: February 25, 2020Assignee: LG ELECTRONICS INC.Inventors: Dong Hoe Kim, Eun Jung Yang, Kyu Ho Kim, Sang Hyun Lee, Min Woo Hong, Young Soo Chang
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Patent number: 10553610Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.Type: GrantFiled: October 2, 2018Date of Patent: February 4, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Taehee Lee, Hyunwook Kim, Eun-jung Yang
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Publication number: 20190304993Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.Type: ApplicationFiled: October 2, 2018Publication date: October 3, 2019Inventors: Taehee LEE, Hyunwook Kim, Eun-jung Yang
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Publication number: 20170212631Abstract: A mobile terminal for one-hand operation mode is provided, the mobile terminal including: a display unit including a touch screen; a sensor unit sensing a motion; and a controller, in response to at least one of a touch input applied to the touch screen and a motion sensed by the sensor unit, executing an one-hand operation mode to control a size or a position of a screen displayed on the display unit.Type: ApplicationFiled: October 28, 2016Publication date: July 27, 2017Applicant: LG ELECTRONICS INC.Inventors: Dong Hoe KIM, Eun Jung YANG, Kyu Ho KIM, Sang Hyun LEE, Min Woo HONG, Young Soo CHANG