Abstract: An image sensing device includes an image pixel region including active pixels, each active pixel configured to generate an imaging pixel signal through a photoelectric conversion of incident light received by the active pixel, and an optical black pixel region disposed separately from the image pixel region and including a plurality of black pixels and a light blocking layer that blocks incident light from entering the black pixels, each black pixel configured to generate a black pixel signal for correcting dark current. The image pixel region includes a condensing lens layer configured to condense the incident light, and the optical black pixel region includes a dispersion lens layer configured to disperse the incident light.

Abstract: An image sensing device includes a lens module to converge incident light received from a scene, and a pixel array including a plurality of pixels that includes a center region through which an optical axis of the lens module passes, and an edge region spaced apart from the optical axis of the lens module by a predetermined distance. A pixel included in the edge region includes a semiconductor region including a photoelectric conversion element configured to generate photocharges corresponding to intensity of the incident light, and a microlens including an internal reflection surface that is in contact with a boundary located relatively farther from the optical axis from among boundaries with adjacent pixels of the pixel and disposed over the semiconductor region. The inclination angle of the internal reflection surface varies depending on the position of the pixel.

Abstract: Image sensing devices are disclosed. In an aspect, an image sensing device may include an array of sensor pixels to detect incident light to output pixel signals indicative of an image of the incident light, color filters respectively formed over the sensor pixels to filter light incident to the sensor pixels, respectively, and one or more optical grid structures disposed between adjacent color filters. Each of the one or more optical grid structures may include an air layer formed between the color filters and a first capping film structured to cover the air layer and having an open area formed over the air layer and connected to an outside of the color filters.

Abstract: An image sensing device includes a pixel array of a plurality of unit pixels arranged in a row direction and a column direction and including a first unit pixel that includes floating diffusion region configured to store photocharge generated within the first unit pixel in corresponding to incident light; a first gain conversion transistor connected to the first floating diffusion region; a first row booster block connected to the first gain conversion transistor and a second gain conversion transistor that is included in a second unit pixel adjacent to the first unit pixel in the row direction; and a first column booster block connected to the first gain conversion transistor and a third gain conversion transistor that is included in a third unit pixel adjacent to the first unit pixel in the column direction.

Abstract: An image sensing device includes a first substrate configured to include a plurality of unit pixels configured to detect incident light to produce pixel signals carrying image information in the incident light, a second substrate positioned adjacent to the first substrate and including a structure that generates a first magnetic field at the first substrate affecting the plurality of unit pixels and at least one shielding device disposed between the first substrate and the second substrate, wherein the shielding device includes a sensing circuit configured to detect a first voltage corresponding to the first magnetic field and an offset circuit configured to generate, based on the first voltage, a second magnetic field that counteracts the first magnetic field.

Abstract: An image sensing device includes a lens module to converge incident light from a scene; and a pixel array located relative to the lens module to receive the converged incident light from the lens module and structured to include a plurality of pixels, each of which is structured to detect the converged incident light carrying image information of the scene, wherein the plurality of pixels in the pixel array includes a first pixel in an edge region of the pixel array, the edge region being spaced apart from an optical axis of the lens module by a predetermined distance, and wherein the first pixel includes: a semiconductor region including a photoelectric conversion element configured to generate photocharge corresponding to an intensity of the incident light detected at the fist pixel; a microlens disposed over the semiconductor region; and a reflective structure disposed to cover a portion of the first pixel.

Abstract: An image sensing device includes a first substrate configured to include a plurality of unit pixels configured to detect incident light to produce pixel signals carrying image information in the incident light, a second substrate positioned adjacent to the first substrate and including a structure that generates a first magnetic field at the first substrate affecting the plurality of unit pixels and at least one shielding device disposed between the first substrate and the second substrate, wherein the shielding device includes a sensing circuit configured to detect a first voltage corresponding to the first magnetic field and an offset circuit configured to generate, based on the first voltage, a second magnetic field that counteracts the first magnetic field.

Abstract: Inage sensors and image sensor test systems and methods are disclosed. In some implementations, an image sensor may include an active pixel array including a plurality of active pixels operable to convert incident light into pixel signals carrying image information in the incident light, a plurality of sample pixel groups located adjacent to but spatially separate from the active pixel array, and having different heat dissipation characteristics from other sample pixel groups, and a plurality of temperature sensors coupled to the sample pixel groups, respectively, to provide temperature measurements.

Abstract: An image sensing device is provided to include a substrate including a first surface and a second surface, a color filter formed over the first surface, a photoelectric conversion element formed in the substrate and arranged to correspond to the color filter, and one or more polarizers formed between the first surface and the photoelectric conversion element and embedded in the substrate. The one or more polarizers are configured to transmit light of polarization oriented in a specific direction and block light of polarization oriented in other directions than the specific direction.

Abstract: Image sensing devices are disclosed. In an aspect, an image sensing device may include an array of sensor pixels to detect incident light to output pixel signals indicative of an image of the incident light, color filters respectively formed over the sensor pixels to filter light incident to the sensor pixels, respectively, and one or more optical grid structures disposed between adjacent color filters. Each of the one or more optical grid structures may include an air layer formed between the color filters and a first capping film structured to cover the air layer and having an open area formed over the air layer and connected to an outside of the color filters.