Patents by Inventor Eun Kyu IN

Eun Kyu IN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10706932
    Abstract: A memory device prevents generation of an abnormal column address. The memory device includes: a memory cell array; and a column address controller configured to generate a column address of the memory cell array in response to a column address control signal, wherein the column address controller enables the column address control signal when an address signal is input, and wherein the address signal includes a column address signal corresponding to the column address.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: July 7, 2020
    Assignee: SK hynix Inc.
    Inventors: Eun Kyu In, Jae Woo Park, Seok Won Park, Byung Ryul Kim
  • Publication number: 20190035468
    Abstract: A memory device prevents generation of an abnormal column address. The memory device includes: a memory cell array; and a column address controller configured to generate a column address of the memory cell array in response to a column address control signal, wherein the column address controller enables the column address control signal when an address signal is input, and wherein the address signal includes a column address signal corresponding to the column address.
    Type: Application
    Filed: December 29, 2017
    Publication date: January 31, 2019
    Inventors: Eun Kyu IN, Jae Woo PARK, Seok Won PARK, Byung Ryul KIM
  • Patent number: 9507361
    Abstract: The initialization signal generation circuit includes a first driver and a second driver. The first driver includes at least one passive element and drives an initialization signal while a level of an external voltage signal reaches an initial level. The second driver drives the initialization signal in response to a control signal from a point of time that a level of the external voltage signal reaches the initial level.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: November 29, 2016
    Assignee: SK hynix Inc.
    Inventors: Bon Kwang Koo, Jun Seop Jung, Yu Jong Noh, Eun Kyu In
  • Patent number: 9489993
    Abstract: A semiconductor memory apparatus may include: a memory area; and a controller including a register configured to store parameter setting data, and to provide the parameter setting data to the memory area based on a data transmission enable signal enabled according to a parameter setting command or parameter get command.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: November 8, 2016
    Assignee: SK HYNIX INC.
    Inventor: Eun Kyu In
  • Publication number: 20160276003
    Abstract: A semiconductor memory apparatus may include: a memory area; and a controller including a register configured to store parameter setting data, and to provide the parameter setting data to the memory area based on a data transmission enable signal enabled according to a parameter setting command or parameter get command.
    Type: Application
    Filed: May 28, 2015
    Publication date: September 22, 2016
    Inventor: Eun Kyu IN
  • Publication number: 20150177763
    Abstract: The initialization signal generation circuit includes a first driver and a second driver. The first driver includes at least one passive element and drives an initialization signal while a level of an external voltage signal reaches an initial level. The second driver drives the initialization signal in response to a control signal from a point of time that a level of the external voltage signal reaches the initial level.
    Type: Application
    Filed: May 21, 2014
    Publication date: June 25, 2015
    Applicant: SK hynix Inc.
    Inventors: Bon Kwang KOO, Jun Seop JUNG, Yu Jong NOH, Eun Kyu IN