Abstract: The present invention relates to a method and system for providing language learning services. The method of providing language learning services, according to the present invention, the method may include: activating, in response to receiving an input for acquiring a learning target image through a user terminal, a camera of the user terminal; specifying at least a portion of an image taken by the camera as the learning target image; receiving language learning information for the learning target image from a server; providing the language learning information to the user terminal; and storing, based on a request for storing of the language learning information, the language learning information in association with the learning target image, such that the learning target image is used in conjunction with learning of the language learning information.

Abstract: Oxide-based thin film sintered bodies, oxide-based solid electrolyte sheets, and all-solid lithium secondary batteries are disclosed. In some implementations, an oxide-based thin film sintered body includes oxide particles, the oxide-based thin film sintered body having a surface roughness Ra ranging from 0.1 to 3 ?m, wherein Ra is an arithmetical mean height of a surface, wherein the oxide particles absorb light energy in a wavelength range from 10 to 1200 nm and have an energy band gap ranging from 0.1 to 15 eV.

Abstract: An oxide-based film sheet according to an embodiment of the disclosure includes an oxide-based particle, wherein the oxide-based particle includes a colored oxide particle capable of absorbing light energy in a visible light spectrum. An oxide-based solid electrolyte sheet according to an embodiment of the disclosure may be prepared by light-sintering the oxide-based film sheet. According to an embodiment of the disclosure, an oxide-based solid electrolyte sheet in which a connection structure between particles, shapes of the particles, porosity, or the like are appropriately provided may be prepared by light-sintering.

Abstract: Provided is a method for recovering and reusing an active material from a positive electrode scrap.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: Proposed is a micropump. The micropump includes a head portion including a first and second movement guides and a first tip, and includes a body portion having at least a portion thereof accommodated in the head portion, the body portion including a core, a winding body, a first permanent magnet, a second permanent magnet, a first fixing guide, and a second fixing guide. The first movement guide and the first fixing guide are famed so as to correspond to each other, the second movement guide and the second fixing guide are formed so as to correspond to each other, a pole of the first permanent magnet faces or opposes a lower end contact surface of the core, and a facing direction of a pole of the second permanent magnet is same as a facing direction of the first permanent magnet.

Abstract: The present disclosure discloses a biomarker capable of predicting the therapeutic response to anticancer agents and prognosis of triple-negative breast cancer patients, and the use thereof. A biomarker according to the present disclosure allows the provision of optimized personal therapeutic methods through correct personalized treatment, contributing to the quality and prolongation of life of patients.

Abstract: The present disclosure discloses a biomarker capable of predicting the therapeutic response to anticancer agents and prognosis of triple-negative breast cancer patients, and the use thereof. A biomarker according to the present disclosure allows the provision of optimized personal therapeutic methods through correct personalized treatment, contributing to the quality and prolongation of life of patients.

Abstract: Methods of manufacturing a resistance change layer and a resistive random access memory device are provided. The method of manufacturing a resistance change layer includes forming a preliminary resistance change layer including an oxide semiconductor material on a substrate and irradiating the preliminary resistance change layer with an electron beam to a predetermined depth. On a path along which the electron beam is irradiated, a composition ratio of the resistance change layer changes in a direction in which a density of oxygen vacancies of the oxide semiconductor material increases. Accordingly, the composition ratio of a resistance change layer is easily controlled using electron beam irradiation. In addition, since interfacial surface roughness and internal defect structures of an oxide semiconductor are controlled by electron beam irradiation, a resistance change ratio is improved and thereby device characteristics can be improved.

Abstract: Methods of manufacturing a resistance change layer and a resistive random access memory device are provided. The method of manufacturing a resistance change layer includes forming a preliminary resistance change layer including an oxide semiconductor material on a substrate and irradiating the preliminary resistance change layer with an electron beam to a predetermined depth. On a path along which the electron beam is irradiated, a composition ratio of the resistance change layer changes in a direction in which a density of oxygen vacancies of the oxide semiconductor material increases. Accordingly, the composition ratio of a resistance change layer is easily controlled using electron beam irradiation. In addition, since interfacial surface roughness and internal defect structures of an oxide semiconductor are controlled by electron beam irradiation, a resistance change ratio is improved and thereby device characteristics can be improved.

Abstract: Disclosed is an expandable EMS that can efficiently manage an RAS and an ACR (i.e. network elements of a wireless communication network) and flexibly expand performance and functions of a system according to an increase in the elements. The expansible EMS of a wireless communication network, the expansible EMS including: an EMS application server for performing at least one of a configuration management function, a fault management function, a download management function, and a status management function for elements, in response to a command transmitted from an EMS client; and at least one EMS element interface server directly connected with the elements, the at least one EMS element interface server receiving a message and data from the elements and providing the received message and data to the EMS application server, wherein the EMS element interface server is separated from the EMS application server.

Abstract: Disclosed is an interface for interfacing an element management server in a wireless telecommunication system and a method for the same. The element management server for managing an ACR and an RAS, which are elements of the wireless telecommunication system, are adapted to interwork with the ACR and the RAS, respectively, so that the server can directly manage the ACR and the RAS and, particularly, the RAS can be operated more efficiently and maintained/repaired more quickly. The element management server manages the version of a package regarding all processors of lower elements and software to be loaded, and respective processors of the lower elements store nothing but their setup information (e.g. software, version) so that, if necessary, the element management server can transmit specific software only to the lower elements. This guarantees fast software download and provides users with stable services.

Abstract: A method for aligning quantum dots effectively controls a growth position of the quantum dots for obviating an irregularity of a position of spontaneous formation quantum dots, and thus aligns the quantum dots in one-dimension (1-D) or two-dimension (2-D). A semiconductor device fabricated using the method manufactures a superlattice layer layer for adjusting an internal strain distribution by alternately depositing two semiconductor materials having different lattice constant, and grows spontaneous formation quantum dots on the superlattice layer. As a result, a strained force caused by the superlattice layer influences on the quantum dots so that the quantum dots can be regularly aligned.

Abstract: Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency in the lattice constant on a tilted substrate by using the binding property of atomic bonding due to chemical bonding steps of the tilted substrate, and the spacing of the wire-like quantum dots is varied by using the step width of the tilted substrate which is transformed due to a partial pressure of a source gas and the thickness of a buffer layer. The invention allows materials having an inconsistency in the lattice constant to be freely formed in the form of quantum wires with a growing technique only and accordingly to be used as base materials in use for manufacture of novel concept of optoelectronic devices which have not been obtained so far.

Abstract: The present invention relates to a method of fusion for heteroepitaxial layers and overgrowth thereon. According to the present invention, a high quality heteroepilayer can be formed by patterning a fused semiconductor layer, overgrowing it with a persistent patterned character, and fusing other semiconductors having different lattice constants by means of utilizing the rate difference between the lateral growth rate and the vertical growth rate exhibited, on the above process. Further, according to the present invention, the lattice constant difference of the two semiconductors can be overcome and a high quality quantum structure can be formed. According to the present invention, the junction of two semiconductor materials having different lattice constants, as well as a good overgrowth on heteroepitaxial layers can be carried out. Accordingly to the present invention, the base material from which the new, as yet on realized, conceptive optoelectronic device can be made.

Abstract: Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency in the lattice constant on a tilted substrate by using the binding property of atomic bonding due to chemical bonding steps of the tilted substrate, and the spacing of the wire-like quantum dots is varied by using the step width of the tilted substrate which is transformed due to a partial pressure of a source gas and the thickness of a buffer layer. The invention allows materials having an inconsistency in the lattice constant to be freely formed in the form of quantum wires with a growing technique only and accordingly to be used as base materials in use for manufacture of novel concept of optoelectronic devices which have not been obtained so far.

Abstract: Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature.

Abstract: Disclosed is a method for fabricating a single electron tunneling transistor. In the above method, an insulating layer and a conductive layer are orderly formed on a substrate. The conductive layer is patterned such that the insulating layer is exposed, to form a T-shaped conductive pattern of which a first portion arranged in a vertical direction is connected to a middle portion of a second portion arranged in a horizontal direction. A focused-ion beam is irradiated onto the connected middle portion of the T-shaped conductive pattern such that the second portion is cut at a middle portion thereof and the first portion is separated from the first portion, to form nano-crystal regions respectively at a first cut portion of the first pattern and a second cut portion of the second pattern using an irradiation effect of the focused-ion beam.