Patents by Inventor Eun-Mi Hong

Eun-Mi Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200190143
    Abstract: According to aspects of the present invention, a peptide with any one sequence of SEQ ID NOS:1 to 3 exhibits high selective binding affinity to a target and the microcapsule has superior physicochemical stability. Therefore, the cosmetic composition containing the microcapsule linked to the peptide manifests high delivery efficiency of an active ingredient included in the capsule to target cells, thereby exhibiting superior skin-condition improvement effects.
    Type: Application
    Filed: January 19, 2018
    Publication date: June 18, 2020
    Inventors: Sang Keun HAN, Hyun Sook LEE, Eun Ah KIM, Seung Min HYUN, Hyeong CHOI, So Yoon BAEK, Jae Hwa HONG, Chae Mi LIM, Da Jeong BAK, Hye Jin JO, Hak Sung LEE, Ji Hun PARK, Eun Young LEE
  • Patent number: 10683553
    Abstract: The present invention relates to a method for determining sensitivity to a simultaneous inhibitor against poly ADP ribose polymerase (PARP) and Tankyrase. According to the present invention, a colorectal treatment effect can be maximized by sorting patients having sensitivity to the simultaneous inhibitor against PARP and Tankyrase.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: June 16, 2020
    Assignee: THE ASAN FOUNDATION
    Inventors: Dong Hoon Jin, Seung Woo Hong, Jai Hee Moon, Jae Sik Shin, Seung Mi Kim, Dae Hee Lee, Eun Young Lee, Jung Shin Lee, Bong Choel Kim
  • Publication number: 20200121749
    Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.
    Type: Application
    Filed: February 7, 2018
    Publication date: April 23, 2020
    Inventors: Chul Yung CHOI, Dool Ri OH, Yu Jin KIM, Eun Jin CHOI, Hyun Mi LEE, Dong Hyuck BAE, Kyo Nyeo OH, Myung-A JUNG, Ji Ae HONG, Kwang Su KIM, Hu Won KANG, Jae Yong KIM, Sang O PAN, Sung Yoon PARK, Rack Seon SEONG
  • Patent number: 10489598
    Abstract: A system for diagnosing and analyzing infrastructure, comprising: a storage unit storing a diagnostic script, which is for collecting system information from a target system or at least one target operating server of the target system; a script transmission unit transmitting the diagnostic script to the target system to diagnose the target system; a system information collection unit receiving the system information from the target system or the at least one target operating server as a result of the running of the diagnostic script; an analysis engine storage unit storing at least one analysis rule corresponding to the target system or the at least one target operating server; and an analysis information generation unit analyzing the system information by using the analysis rule, and generating analysis information regarding the target system and the at least one target operating server based on the results of the analyzing.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: November 26, 2019
    Assignee: SAMSUNG SDS CO., LTD.
    Inventors: In Chul Han, Seung Youl Maeng, Sung Hwan Choi, Min Ho Sung, Ji Yun Lee, Do San Pyun, Young Beom Seo, Seong Dae Song, Eun Young Kim, Sung Soon Hong, Jeong A Choi, Yoo Mi Kwon, Chang Won Park, Mun Hwan Kim
  • Publication number: 20190328868
    Abstract: The present invention relates to a herpes zoster vaccine composition, which comprises glycoprotein E of Varicella zoster virus, a glucopyranosyl lipid adjuvant, and a metabolic oil, and selectively increases a cell-mediated immune reaction without having disadvantages of attenuated live vaccines, thereby exhibit high safety and a high preventive effect against herpes zoster.
    Type: Application
    Filed: December 20, 2017
    Publication date: October 31, 2019
    Applicants: MOGAM INSTITUTE FOR BIOMEDICAL RESEARCH, INFECTIOUS DISEASE RESEARCH INSTITUTE
    Inventors: Hyo Jung NAM, Eun Mi KIM, Duck Hyang SHIN, Steven G. REED, Kang Il YOO, Sung Jun HONG
  • Patent number: 10344102
    Abstract: Provided is an olefin-based polymer with excellent processability. The olefin-based polymer according to the present invention has a high molecular weight and a broad molecular weight distribution to show excellent processability and improved mechanical properties, thereby being usefully applied according to the intended use.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: July 9, 2019
    Assignee: LG CHEM, LTD.
    Inventors: Joong Soo Kim, Yu Taek Sung, Ki Soo Lee, Dae Sik Hong, Ki Heon Song, Eun Kyoung Song, Heon Yong Kwon, Yong Ho Lee, Dong Hoon Jeong, Soon Ho Sun, Sun Mi Kim
  • Patent number: 9815840
    Abstract: The present invention relates to a pyrrolopyridazine derivative represented by Formula 1 of the detailed description, or a pharmaceutically acceptable salt thereof. The compound according to the present invention and a pharmaceutically acceptable salt thereof can inhibit the activity of protein kinase(s), and thus are useful for preventing or treating diseases related thereto.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: November 14, 2017
    Assignee: The Asan Foundation
    Inventors: Tae Gon Baik, Won-Hyuk Jung, Seung In Kim, Seung Chan Kim, Sook Kyung Park, Su Yeon Jung, Seung Hee Ji, So Young Ki, Min Cheol Kim, Eun Young Lee, Eun Mi Hong
  • Publication number: 20160207931
    Abstract: The present invention relates to a pyrrolopyridazine derivative represented by Formula 1 of the detailed description, or a pharmaceutically acceptable salt thereof. The compound according to the present invention and a pharmaceutically acceptable salt thereof can inhibit the activity of protein kinase(s), and thus are useful for preventing or treating diseases related thereto.
    Type: Application
    Filed: August 29, 2014
    Publication date: July 21, 2016
    Applicant: CJ Healthcare Corporation
    Inventors: Tae Gon BAIK, Won-Hyuk JUNG, Seung In KIM, Seung Chan KIM, Sook Kyung PARK, Su Yeon JUNG, Seung Hee JI, So Young KI, Min Cheol KIM, Eun Young LEE, Eun Mi HONG
  • Patent number: 7968405
    Abstract: A method of manufacturing a nonvolatile memory device is provided. The method includes forming an isolation layer in a semiconductor substrate defining an active region and forming a molding pattern on the isolation layer. A first conductive layer is formed on a sidewall and a top surface of the molding pattern and on the semiconductor substrate. The first conductive layer on the top surface of the molding pattern is selectively removed forming a conductive pattern. The conductive pattern includes a body plate disposed on the active region and a protrusion which extends from an edge of the body plate onto the sidewall of the molding pattern. The molding pattern is then removed. An inter-gate dielectric layer is formed on the isolation layer and the conductive pattern. Nonvolatile memory devices manufactured using the method are also provided.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: June 28, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Mi Hong, Kwang-Tae Kim, Ji-Hoon Park
  • Patent number: 7863110
    Abstract: A semiconductor device includes a device isolation layer on a semiconductor substrate defining an active region in the semiconductor substrate, a low voltage well of a first conductivity type in the active region of the semiconductor substrate, a high voltage impurity region of a second conductivity type in the active region of the semiconductor substrate, the high voltage impurity region positioned in an upper portion of the low voltage well, a high concentration impurity region of the second conductivity type within the high voltage impurity region and spaced apart from the device isolation layer, and a floating impurity region of the first conductivity type between the device isolation layer and the high concentration impurity region, the floating impurity region being a portion of an upper surface of the active region.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: January 4, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tea-Kwang Yu, Kong-Sam Jang, Kwang-Tae Kim, Ji-Hoon Park, Eun-Mi Hong
  • Publication number: 20080197401
    Abstract: A method of manufacturing a nonvolatile memory device is provided. The method includes forming an isolation layer in a semiconductor substrate defining an active region and forming a molding pattern on the isolation layer. A first conductive layer is formed on a sidewall and a top surface of the molding pattern and on the semiconductor substrate. The first conductive layer on the top surface of the molding pattern is selectively removed forming a conductive pattern. The conductive pattern includes a body plate disposed on the active region and a protrusion which extends from an edge of the body plate onto the sidewall of the molding pattern. The molding pattern is then removed. An inter-gate dielectric layer is formed on the isolation layer and the conductive pattern. Nonvolatile memory devices manufactured using the method are also provided.
    Type: Application
    Filed: February 6, 2008
    Publication date: August 21, 2008
    Inventors: Eun-Mi Hong, Kwang-Tae Kim, Ji-Hoon Park
  • Publication number: 20080130367
    Abstract: A nonvolatile memory device includes a semiconductor well region of first conductivity type on a semiconductor substrate and a common source diffusion region of second conductivity type extending in the semiconductor well region and forming a P-N rectifying junction therewith. A byte-erasable EEPROM memory array is provided in the semiconductor well region. This byte-erasable EEPROM memory array is configured to support independent erasure of first and second pluralities of EEPROM memory cells therein that are electrically connected to the common source diffusion region.
    Type: Application
    Filed: February 7, 2008
    Publication date: June 5, 2008
    Inventors: Sung-Taeg Kang, Hee-Seog Jeon, Jeong-Uk Han, Chang-Hun Lee, Bo-Young Seo, Chang-Min Jeon, Eun-Mi Hong
  • Publication number: 20080093701
    Abstract: A semiconductor device includes a device isolation layer on a semiconductor substrate defining an active region in the semiconductor substrate, a low voltage well of a first conductivity type in the active region of the semiconductor substrate, a high voltage impurity region of a second conductivity type in the active region of the semiconductor substrate, the high voltage impurity region positioned in an upper portion of the low voltage well, a high concentration impurity region of the second conductivity type within the high voltage impurity region and spaced apart from the device isolation layer, and a floating impurity region of the first conductivity type between the device isolation layer and the high concentration impurity region, the floating impurity region being a portion of an upper surface of the active region.
    Type: Application
    Filed: October 19, 2007
    Publication date: April 24, 2008
    Inventors: Tea-Kwang Yu, Kong-Sam Jang, Kwang-Tae Kim, Ji-Hoon Park, Eun-Mi Hong
  • Publication number: 20070091682
    Abstract: A nonvolatile memory device includes a semiconductor well region of first conductivity type on a semiconductor substrate and a common source diffusion region of second conductivity type extending in the semiconductor well region and forming a P-N rectifying junction therewith. A byte-erasable EEPROM memory array is provided in the semiconductor well region. This byte-erasable EEPROM memory array is configured to support independent erasure of first and second pluralities of EEPROM memory cells therein that are electrically connected to the common source diffusion region.
    Type: Application
    Filed: June 28, 2006
    Publication date: April 26, 2007
    Inventors: Sung-Taeg Kang, Hee-Seog Jeon, Jeong-Uk Han, Chang-Hun Lee, Bo-Young Seo, Chang-Min Jeon, Eun-Mi Hong