Patents by Inventor Eun Mi Ko

Eun Mi Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8519412
    Abstract: A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: August 27, 2013
    Assignee: LG Display Co., Ltd.
    Inventors: Su Hyoung Son, Kyoung Jin Kim, Eun Mi Ko, Ung Lee
  • Patent number: 8298842
    Abstract: Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: October 30, 2012
    Assignee: LG Display Co., Ltd.
    Inventors: Su Hyoung Son, Kyoung Jin Kim, Won Keun Cho, Eun Mi Ko, Hyung Sun Hwang
  • Publication number: 20120070924
    Abstract: Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon.
    Type: Application
    Filed: December 22, 2010
    Publication date: March 22, 2012
    Inventors: Su Hyoung SON, Kyoung Jin Kim, Won Keun Cho, Eun Mi Ko, Hyung Sun Hwang
  • Publication number: 20110140127
    Abstract: A semiconductor light-emitting device and a method for manufacturing the same is disclosed, which improves light extraction efficiency by forming a plurality of protrusions on a surface of a substrate for growing a nitride semiconductor material thereon, the semiconductor light-emitting device comprising a substrate; one or more first protrusions on the substrate, each first protrusion having a recess through which a surface of the substrate is exposed planarly; a first semiconductor layer on the substrate including the first protrusions; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer; and a second electrode on the second semiconductor layer.
    Type: Application
    Filed: July 15, 2010
    Publication date: June 16, 2011
    Inventors: Su Hyoung Son, Kyoung Jin Kim, Eun Mi Ko, Ung Lee