Abstract: The present invention relates to a method for manufacturing a silicon nitride substrate and, more specifically, comprises the steps of: forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent; molding the slurry to form sheets; sandwiching at least one of the sheets between a lower plate and an upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate comprises a plurality of protrusions provided on one surface thereof, and the protrusions extend in parallel to each other in one direction.

Abstract: Disclosed herein are an apparatus and a method for producing aluminum nitride powder, and aluminum nitride powder prepared thereby. The apparatus for producing aluminum nitride powder includes: a vertical reactor including an aluminum source supplier for supplying aluminum source and a nitrogen source supplier for supplying nitrogen source, the vertical reactor causing chemical vapor reaction between the aluminum source and the nitrogen source supplied therein; a trap device including a membrane for passing resulting products from the reaction; and a bubbling device for capturing the products having passed through the trap device.

Abstract: The present invention relates to the macroporous manganese oxide material having ferromagnetic property and a method of preparing the same, more particularly to the macroporous ferromagnetic manganese oxide having three-dimensionally ordered nanopores, which is prepared by aligning colloidal polymer particles with an average diameter of a few hundred nanometers in 3D, infiltrating a solution of the precursor compound capable of forming manganese oxide represented by the following Chemical Formula 1 into interstices of the colloidal template and heating in an oxygen atmosphere to decompose and remove the polymer template, and a method for preparing the same: La1-xCax-ySryMnO3 ??(1) wherein 0.25<x<0.35 and 0<y?0.35.

Abstract: The present invention relates to a method for preparing manganese-based nitride having nearly zero temperature coefficient of resistivity and more particularly, to the effective method for preparing manganese-based nitride expressed by the formula (1), wherein the manganese-based nitride, prepared by heating the stoichiometric mixture of Mn2N and Cu in an evacuated quartz tube, provides some advantages in that i) the use of the Mn2N compound as a reactant, the formation of impurities and nitrogen evaporation may be prevented, and ii) through nitrogen is tightly bonded between metals, the manganese-based nitride has extremely low (46 ppm/K) temperature coefficient of resistivity.

Abstract: The present invention relates to a method for preparing manganese-based nitride having nearly zero temperature coefficient of resistivity and more particularly, to the effective method for preparing manganese-based nitride expressed by the formula (1), wherein the manganese-based nitride, prepared by heating the stoichiometric mixture of Mn2N and Cu in an evacuated quartz tube, provides some advantages in that i) the use of the Mn2N compound as a reactant, the formation of impurities and nitrogen evaporation may be prevented, and ii) through nitrogen is tightly bonded between metals, the manganese-based nitride has extremely low (46 ppm/K) temperature coefficient of resistivity.