Abstract: A method of forming a buried interconnection includes removing a semiconductor substrate to form a groove in the semiconductor substrate. A metal layer is formed on inner walls of the groove using an electroless deposition technique. A silicidation process is applied to the substrate having the metal layer, thereby forming a metal silicide layer on the inner walls of the groove.

Abstract: In an embodiment a first silicon pattern and a second silicon pattern are formed on a substrate. The second silicon pattern has a lower top surface than the first silicon pattern. A first spacer covering a sidewall of the first silicon pattern is formed and a second spacer covering a sidewall of the second silicon pattern is formed. A silicide process is performed to silicidize the first silicon pattern and the second silicon pattern. Work functions of the first and second silicon patterns can be controlled and optimized by controlling the composition of the first and second silicon patterns.

Abstract: A method of manufacturing a semiconductor device includes forming a pillar-shaped active region by etching a portion of a semiconductor substrate, forming a blocking film selectively exposing a sidewall of a lower portion of the pillar-shaped active region, and forming a bit-line selectively on the exposed sidewall of the lower portion of the pillar-shaped active region.

Abstract: Disclosed is a method for controlling a memory in a mobile communication system. The method includes receiving certain frame control information by a Data Receiver Block (DRB) from a MAP decoder, forming a burst descriptor by the DRB by using the frame control information, and transferring the burst descriptor to a Low Medium Access Control (LMAC), and allocating a memory by the LMAC based on bursts according to the burst descriptor.

Abstract: Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.

Abstract: TiN layer structures for semiconductor devices, methods of forming TiN layer structures, semiconductor devices having TiN layer structures and methods of fabricating semiconductor devices are disclosed. The TiN layer structure for a semiconductor device includes a TiN base layer and a conductive capping layer. The TiN base layer is formed on a substrate. The conductive capping layer is formed on the TiN base layer by laminating unit layers repeatedly.

Abstract: A method and apparatus for decoding a concatenated burst in a WiBro system are provided. A concatenated decoder fragments a received burst into fragment blocks, decodes at least one of the fragment blocks, and determines whether the decoded fragment block satisfies a circular state. A concatenated decoding controller determines burst quality information of the received burst according to a circular state check result on the decoded fragment block, and determines whether to stop decoding on the received burst according to the burst quality information.

Abstract: The apparatus for setting furniture in variable elevated positions of the present invention is comprised of a rail (14) which is vertically secured onto the surface of an interior wall; elevating means (12) which vertically move upon and along said rail (14) and include a furniture supporting means and a guide means for engaging with said rail and preventing rotation of said elevating means (12); and means to effect the vertical motion of said elevating means. Said means to effect the vertical motion of said elevating means is comprised of pulley sets (22, 24, 30, 36) and a rope (32) connected to said pulleys, so if a portion of said rope (32) is pulled, said elevating means (12) is elevated, and if said rope (32) is released, said elevating means (12) is lowered.