Patents by Inventor Eun Park

Eun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090136923
    Abstract: Disclosed are a primer composition including two pairs of primers targeting one gene (mpb64) concerning Mycobacterium sp., and a pair of primers targeting a human-derived gene (HLA-DR); and a method for detecting Mycobacterium sp. using a multiplex one-tube nested PCR method in which their primers are used to amplify two genes in one tube at the same time. The method of the present invention may provide a useful guide post capable of clinically diagnosing Mycobacterium sp. in a specimen in a more specific, rapid and convenient manner.
    Type: Application
    Filed: December 20, 2005
    Publication date: May 28, 2009
    Inventors: Eun Park, Moo-Joo Lee, Kyung-Ryul Lee
  • Publication number: 20070184567
    Abstract: The present invention relates to a method for forming a GaN-based nitride layer comprising a first step of forming a first layer comprising SiaCbNc (c,fc>0, a?0) on a sapphire substrate and a second step for forming a nitride layer comprising a GaN component on the first layer comprising SiaCbNc (c,b>0, a?0).
    Type: Application
    Filed: May 19, 2005
    Publication date: August 9, 2007
    Applicant: EPIVALLEY CO., LTD.
    Inventors: Tae Yoo, Eun Park
  • Publication number: 20070180843
    Abstract: A Kimchi refrigerator that emits light into a storage compartment, in which Kimchi is stored, to improve taste of the Kimchi and a control method of the same are disclosed. The Kimchi refrigerator according to the present invention includes an light emitting unit to emit light into the storage compartment. The light is emitted to Kimchi, whereby the taste of the Kimchi is improved.
    Type: Application
    Filed: January 19, 2007
    Publication date: August 9, 2007
    Inventors: Eun Park, Yeon Hwang, Seok Lim, Eun Kim, Deul Min
  • Publication number: 20070178869
    Abstract: A frequency synthesizing apparatus and method for a multi-band radio frequency (RF) receiver is provided. The frequency synthesizing apparatus includes a simple circuit configuration with a single SSB mixer and thus, may synthesize six high frequency signals. Signals to be inputted into the SSB mixer include a first signal and a second signal. The first signal is generated based on a VCO and a PPF. Also, the second signal is selected from a plurality of frequency divided signals which are generated by dividing a signal generated in the VCO via a plurality of dividers.
    Type: Application
    Filed: July 7, 2006
    Publication date: August 2, 2007
    Inventors: Eun Park, Hyun Chae, Hoon Kim
  • Publication number: 20070166611
    Abstract: Disclosed herein are a high power lithium unit cell and a high power lithium battery pack having the high power lithium unit cell. The present invention increases the width of an electrode terminal of a lithium battery, thus reducing heat generation and a potential drop due to resistance of the electrode terminal, therefore efficiently eliminating the generated heat.
    Type: Application
    Filed: December 12, 2005
    Publication date: July 19, 2007
    Applicant: SK CORPORATION
    Inventors: Jeon-keun Oh, Joong-Hul Lee, Eun Park
  • Publication number: 20070140392
    Abstract: A multi-input multi-frequency synthesizing apparatus and method for a multi-band radio frequency (RF) receiver. The frequency synthesizing apparatus may generate an output from a greater number of high frequency signals by using one multi-input single side band (SSB) mixer. The multi-input SSB mixer may generate a signal whose frequency is an addition of frequencies of two signals selected from a signal selection control unit, or a difference of frequencies therebetween. According to a circuit configuration of the multi-input SSB mixer, the signal selection control unit may select more than two signals.
    Type: Application
    Filed: May 24, 2006
    Publication date: June 21, 2007
    Inventors: Choong-Yul Cha, Eun Park, Hoon Kim
  • Publication number: 20070122508
    Abstract: The present invention provides a pharmaceutical composition comprising the extract of hardy kiwifruit as an active ingredient in an effective amount to treat and prevent allergic disease and non-allergic inflammatory disease by reducing inflammation action, by inhibiting histamine release from mast cell, and by increasing the level of Th1 cytokines, IgG2a in serum and reducing the level of Th2 cytokines and IgE in serum. The present invention also provides a use of above extract for the preparation of pharmaceutical composition. The present invention also provides a health food or food additives, a cosmetic composition, a feed or feed additives comprising above extract for prevention or alleviation of allergic disease and non-allergic inflammatory disease by reducing inflammation action, by inhibiting histamine release from mast cell, and by increasing the level of Th1 cytokines, IgG2a in serum, and reducing the level of Th2 cytokines and IgE in serum.
    Type: Application
    Filed: September 18, 2006
    Publication date: May 31, 2007
    Inventors: Sunyoung Kim, Eun Park, Bongcheol Kim, Mirim Jin, Hwa Lee
  • Publication number: 20070100927
    Abstract: Disclosed is a wideband polyphase filter using variable resistors and variable capacitors for correcting a phase and a frequency to be suitable for wideband communication. There is provided a wideband polyphase filter including: a variable resistor in which resistance varies; and a variable capacitor in which capacitance varies, wherein the variable resistor and the variable capacitor correct a wideband frequency and a phase, converts a predetermined differential input into a quadrature signal and outputs the converted quadrature signal. A wideband polyphase filter which varies resistance and capacitance to correct a phase and frequency, and also may obtain a wideband frequency range may be provided.
    Type: Application
    Filed: April 5, 2006
    Publication date: May 3, 2007
    Inventors: Eun Park, Hoon Kim, Choong-Yul Cha
  • Publication number: 20070097597
    Abstract: Disclosed herein is a polymer-ceramic dielectric composition. The dielectric composition comprises a polymer and a ceramic dispersed in the polymer wherein the ceramic is composed of a material having a perovskite structure represented by ABO3 and a metal oxide dopant and has an electrically charged surface. According to the dielectric composition, the surface of the ceramic is electrically charged to induce space-charge polarization (or interfacial polarization) at the polymer/ceramic interface, resulting in an increase in dielectric constant. Since the dielectric composition has a high dielectric constant particularly in a low-frequency range, it can be suitably used to produce decoupling capacitors. Further disclosed are a capacitor and a printed circuit board that use the dielectric composition.
    Type: Application
    Filed: November 1, 2006
    Publication date: May 3, 2007
    Inventors: Min Ko, Eun Park
  • Publication number: 20070087929
    Abstract: Disclosed herein is a composite dielectric composition having a small variation of capacitance with temperature, comprising a combination of a polymer matrix exhibiting a positive or negative variation of capacitance with temperature and a ceramic filler exhibiting a negative or positive variation of capacitance with temperature which is reciprocal to that of the polymer matrix; and a signal-matching embedded capacitor prepared by using the same composition. Particularly, the present invention provides a composite dielectric composition comprising a polymer matrix exhibiting a positive or negative variation of capacitance with temperature and a ceramic filler exhibiting a variation of capacitance which is reciprocal to that of the polymer matrix; and a signal-matching embedded capacitor formed of the same composition and having a variation of capacitance with temperature, ? C/C×100(%), of not more than 5%.
    Type: Application
    Filed: October 13, 2006
    Publication date: April 19, 2007
    Inventors: Eun Park, Yul Chung, Seung Sohn, Min Ko
  • Publication number: 20070081297
    Abstract: A method of manufacturing a thin film capacitor includes steps of: performing recrystallization heat treatment on a metal foil; forming a dielectric layer on a top surface of the recrystallized metal foil; heat treating the metal foil and the dielectric layer; and forming an upper electrode on a top surface of the heat-treated dielectric layer. The recrystallization heat treatment prevents the oxidation of a metal foil, by which a dielectric layer can be heat treated at a high temperature, thereby improving electric properties of a thin film capacitor and the reliability of a product.
    Type: Application
    Filed: October 3, 2006
    Publication date: April 12, 2007
    Inventors: Min Ko, Yul Chung, Eun Park
  • Publication number: 20070016852
    Abstract: Refrigerator for managing food by using RFID including a plurality of storage portions divided in the refrigerator for storing food, RFID devices each having storage information of each kind of food stored in the storage portions, and controller for reading the storage information and setting up the storage portion which maintains a storage condition suitable to the storage information read thus, thereby permitting easy storage of food in a storage portion having the storage condition by using the RFID device.
    Type: Application
    Filed: May 25, 2006
    Publication date: January 18, 2007
    Inventors: Yong Kim, Eun Kim, Jong Shin, Sun Bae, Ku Son, Yong Kwon, Jae Sim, Su Lee, Deok Youn, Byung Kong, Eun Park
  • Publication number: 20070004165
    Abstract: The present invention relates to a thin layer capacitor including first and second metal electrode layers and a dielectric layer of BiZnNb-based amorphous metal oxide having a dielectric constant of at least 15, interposed between the metal layers, and a layered structure having the same. The layered structure includes a first metal electrode layer formed on a polymer-based composite substrate, a dielectric layer, formed on the first metal electrode layer, and made of BiZnNb-based metal oxide with a dielectric constant of at least 15, and a second metal electrode layer formed on the dielectric layer. The BiZnNb-based amorphous metal oxide in this invention has a high dielectric constant without a thermal treatment for crystallization, useful for fabrication of a thin layer capacitor of a polymer-based layered structure such as a PCB.
    Type: Application
    Filed: December 28, 2005
    Publication date: January 4, 2007
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyo Shin, Soon Yoon, Eun Park, Soo Lyoo
  • Publication number: 20070001179
    Abstract: The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x?0, y?0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1-x-y)N (0?x?1, 0?y?1, 0?x+y?1) of the hexagonal structure and SixCyNz(x?0, y?0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SixCyNz(x?0, y?0, x+y>0, z>0) material.
    Type: Application
    Filed: June 28, 2005
    Publication date: January 4, 2007
    Inventors: Tae-Kyung Yoo, Eun Park
  • Publication number: 20060261344
    Abstract: The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, an SiaCbNc (a?0,b>0,c?0,a+c>0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc (a?0,b>0,c?0,a+c>0) layer having an n-type conductivity and a thickness of 5 ? to 500 ? for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc (a?0,b>0,c?0,a+c>0) layer. Generally, in III-nitride semiconductor light emitting devices, if a p-side electrode is formed directly on a p-type nitride semiconductor, high contact resistance is generated due to a high energy bandgap and low doping efficiency of the p-type nitride semiconductor.
    Type: Application
    Filed: March 4, 2005
    Publication date: November 23, 2006
    Inventors: Tae-Kyung Yoo, Chang Tae Kim, Eun Park, Soo Kun Jeon
  • Publication number: 20060246919
    Abstract: A method for transmitting location information includes the steps of: a) receiving a start message including MO (mobile originated location request) mode information from a first terminal; b) calculating location information of the first terminal; and c) transmitting the calculated first terminal's location information according to the MO (mobile originated location request) mode information. A method for transmitting location information in a Secure User Plane Location (SUPL) protocol of a first SUPL Enabled Terminal (SET), a SUPL Location Platform (SLP), and a second SUPL Enabled Terminal (SET) includes the steps of: a) receiving a start message including MO (mobile originated location request) mode information from the first SET; b) calculating location information of the first SET; and c) transmitting the calculated first SET's location information to any one of the first SET and the second SET according to the MO (mobile originated location request) mode information.
    Type: Application
    Filed: April 28, 2006
    Publication date: November 2, 2006
    Inventors: Eun Park, Dong Sim, Ji Huh, Moon Joe
  • Publication number: 20060231169
    Abstract: Disclosed is a single-phase amorphous alloy having an enhanced ductility. The single-phase amorphous alloy has a composition range of A100-a-bBaCb where a and b are respectively 0<a<15, 0?b?30 in atomic percent. Here, A includes at least one element selected from the group consisting of Be, Mg, Ca, Ti, Zr, Hf, Pt, Pd, Fe, Ni, and Cu. B includes at least one element selected from the group consisting of Y, La, Gd, Nb, Ta, Ag, Au, Co, and Zn. C includes at least one element selected from the group consisting of Al, In, Sn, B, C, Si, and P.
    Type: Application
    Filed: June 2, 2005
    Publication date: October 19, 2006
    Inventors: Eun Park, Jong Na, Hye Chang, Ju Lee, Byung Park, Won Kim, Do Kim
  • Publication number: 20060223931
    Abstract: The invention relates to a high-dielectric constant metal/ceramic/polymer composite material and a method for producing an embedded capacitor. As ceramic particles having a relatively small size are bound to the surface of metal particles having a relatively large size by mixing, the occurrence of percolation can be prevented without coating the metal particles, and at the same time, the capacitance of an embedded capacitor can be increased. In addition, a process for coating the surface of the metal particles can be omitted, thus contributing to the simplification of the overall preparation procedure.
    Type: Application
    Filed: February 22, 2006
    Publication date: October 5, 2006
    Inventors: Eun Park, Jeong Kim, Hee Lee, Eun Lim, Jong Lee, Yul Chung
  • Publication number: 20060205159
    Abstract: A gate formation method of flash memory devices includes performing a nitrogen anneal process in a Rapid Thermal Processing (RTP) apparatus to crystallized a tungsten silicide film used as a control gate electrode, which results in reduced sheet resistance (Rs) of a control gate electrode. A Rapid Thermal Oxidization (RTO) process is performed for a short time period, thereby shortening the process time, preventing ONO smiling.
    Type: Application
    Filed: December 5, 2005
    Publication date: September 14, 2006
    Applicant: Hynix Semiconductor Inc.
    Inventor: Eun Park
  • Publication number: 20060203456
    Abstract: The present invention relates to a method of fabricating a printed circuit board having embedded multi-layer passive devices, and particularly, to a method of fabricating a printed circuit board having an embedded multi-layer capacitor, in which a capacitor is formed to have multiple layers in the PCB to increase capacitance.
    Type: Application
    Filed: January 3, 2006
    Publication date: September 14, 2006
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Seung Sohn, Yul Chung, Hyun Jin, Eun Park