Patents by Inventor Eun Sa HWANG

Eun Sa HWANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Quantum-dot light emitting device comprising solution processed charge generation junction and manufacturing method thereof
    Patent number: 11818907
    Abstract: Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: November 14, 2023
    Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Jin Jang, Eun Sa Hwang, Hyo Min Kim
  • QUANTUM-DOT LIGHT EMITTING DEVICE COMPRISING SOLUTION PROCESSED CHARGE GENERATION JUNCTION AND MANUFACTURING METHOD THEREOF
    Publication number: 20220052286
    Abstract: Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.
    Type: Application
    Filed: October 27, 2021
    Publication date: February 17, 2022
    Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Jin Jang, Eun Sa Hwang, Hyo Min Kim
  • Quantum-dot light emitting device comprising solution processed charge generation junction and manufacturing method thereof
    Patent number: 11189810
    Abstract: Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: November 30, 2021
    Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Jin Jang, Eun Sa Hwang, Hyo Min Kim
  • QUANTUM-DOT LIGHT EMITTING DEVICE COMPRISING SOLUTION PROCESSED CHARGE GENERATION JUNCTION AND MANUFACTURING METHOD THEREOF
    Publication number: 20190214594
    Abstract: Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.
    Type: Application
    Filed: August 16, 2017
    Publication date: July 11, 2019
    Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Jin JANG, Eun Sa HWANG, Hyo Min KIM