Patents by Inventor Eun-Seok Choi

Eun-Seok Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110204430
    Abstract: A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.
    Type: Application
    Filed: April 29, 2011
    Publication date: August 25, 2011
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Se Jun KIM, Eun Seok CHOI, Kyoung Hwan PARK, Hyun Seung YOO, Myung Shik LEE, Young Ok HONG, Jung Ryul AHN, Yong Top KIM, Kyung Pil HWANG, Won Sic WOO, Jae Young PARK, Ki Hong LEE, Ki Seon PARK, Moon Sig JOO
  • Publication number: 20110199813
    Abstract: A non-volatile memory device having a three-dimensional (3D) structure includes a plurality of line-type horizontal electrode structures configured to include a plurality of interlayer dielectric layers and a plurality of horizontal electrodes that are alternately stacked over a substrate, a plurality of pillar-type vertical electrodes configured to protrude from the substrate while contacting sidewalls of the plurality of the horizontal electrode structures, and a memory layer interposed between the plurality of the horizontal electrode structures and the plurality of the vertical electrodes, and configured to have a resistance value that varies based on a bias applied to the plurality of the horizontal electrodes and the plurality of the vertical electrodes.
    Type: Application
    Filed: December 29, 2010
    Publication date: August 18, 2011
    Inventors: Hyun-Seung Yoo, Eun-Seok Choi
  • Publication number: 20110169072
    Abstract: A 3D nonvolatile memory device includes a plurality of channel structures each comprising a plurality of channel layers and interlayer dielectric layers which are alternately stacked, a plurality of channel contacts coupled to the plurality of channel layers, respectively, and a plurality of selection lines vertically-coupled to the plurality of channel contacts and crossing over the plurality of channel structures.
    Type: Application
    Filed: December 21, 2010
    Publication date: July 14, 2011
    Inventors: Se-Yun LIM, Eun-Seok Choi
  • Publication number: 20110138905
    Abstract: A lighting apparatus is disclosed. The lighting apparatus is capable of achieving improved aesthetics by irradiating mood lighting into a storage container and also, of functioning to display a variety of status information about the storage container to the outside and to sterilize the interior of the storage container.
    Type: Application
    Filed: December 13, 2010
    Publication date: June 16, 2011
    Inventors: Ji Young KIM, Eun Seok Choi, Ji Hye Hwang, Mi Sun Hwang, Hae Rim Park, Min Su Park
  • Publication number: 20110135564
    Abstract: is the present invention features a high-capacity anode material for rapidly chargeable and dischargeable lithium secondary batteries, which is composed of Li4Ti5O12 nanoparticles. The Li4Ti5O12 nanoparticles of the present invention exhibit excellent crystallinity and high rate capability compared to those synthesized using a conventional polyol process or solid reaction process by converting Li4Ti5O12, which is a zero-strain insert material spotlighted as an anode active material for lithium secondary batteries, into Li4Ti5O12, having a high crystalline nanostructure using a solvothermal synthesis process without performing additional heat treatment. The present invention also features methods of , and a method of preparing the high-capacity anode materials described herein.
    Type: Application
    Filed: May 11, 2010
    Publication date: June 9, 2011
    Applicants: HYUNDAI MOTOR COMPANY, INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY
    Inventors: Jae Kook Kim, Chul Hong Woo, Eun Seok Choi, Jin Sub Lim, Dong Han Kim, Seung Ho Ahn
  • Patent number: 7955960
    Abstract: A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: June 7, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Se Jun Kim, Eun Seok Choi, Kyoung Hwan Park, Hyun Seung Yoo, Myung Shik Lee, Young Ok Hong, Jung Ryul Ahn, Yong Top Kim, Kyung Pil Hwang, Won Sic Woo, Jae Young Park, Ki Hong Lee, Ki Seon Park, Moon Sig Joo
  • Publication number: 20110090737
    Abstract: A 3D non-volatile memory device includes a plate-type lower select line formed over a substrate, a lower select transistor formed in the lower select line, a plurality of memory cells stacked over the lower select transistor, an upper select transistor formed over the memory cells, and a line-type common source line formed over the substrate and spaced from the lower select line.
    Type: Application
    Filed: October 19, 2010
    Publication date: April 21, 2011
    Inventors: Hyun-Seung Yoo, Eun-Seok Choi, Se-Jun Kim
  • Patent number: 7923335
    Abstract: A non-volatile memory device having a Polysilicon Oxide Nitride Oxide Semiconductor (SONOS) structure in which a charge trap layer is separated physically in a horizontal direction, and a method of manufacturing the same. The charge trap layer that traps electric charges toward the source and the drain is physically divided. It can fundamentally prevent the charges at both sides from being moved mutually. It is therefore possible to prevent interference between charges at both sides although the cell size is reduced.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: April 12, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Eun Seok Choi
  • Publication number: 20110061020
    Abstract: An image processing apparatus and a controlling method of the same are provided. The method includes displaying a first screen corresponding to a first application; displaying a second screen corresponding to a second application above the first screen such that the second screen overlaps at least a portion of the first screen; and displaying at least a portion of the second screen that overlaps the portion of the first screen, while controlling the first application.
    Type: Application
    Filed: August 13, 2010
    Publication date: March 10, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ho-june YOO, Byung-seok SOH, Eun-seok CHOI, Sang-on CHOI
  • Publication number: 20110050477
    Abstract: An electronic apparatus, control method thereof, remote control apparatus that controls the electronic apparatus, and control method thereof. The remote control apparatus includes a communication unit which communicates with the electronic apparatus; a user input unit which receives a user button selection indicating an input button; a sensing unit which senses movement of the remote control apparatus; and a control unit which controls the communication unit to transmit information about the user button selection to perform a function corresponding to the input button if the remote control apparatus is in a button input mode, and to transmit information about the movement of the remote control apparatus to the electronic apparatus to control the electronic apparatus by the movement if the remote control apparatus is in a motion recognition mode. Accordingly, controlling a game or a multimedia content is easier, and the user is provided with a new and interesting experience.
    Type: Application
    Filed: January 27, 2010
    Publication date: March 3, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun-seok CHOI, Ho-june YOO, Sang-on CHOI, Byung-seok SOH
  • Publication number: 20100327323
    Abstract: A three-dimensional nonvolatile memory device includes: a plurality of channel structures extending in parallel in a first direction and comprising a plurality of channel layers that are alternatively stacked with a plurality of interlayer insulating layers over a substrate; a plurality of memory cells stacked along sidewalls of the channel structures and arranged in the first direction and a second direction crossing the first direction; and a plurality of word lines extending in parallel in the second direction and connected to the memory cells arranged in the second direction.
    Type: Application
    Filed: September 15, 2009
    Publication date: December 30, 2010
    Inventor: Eun-Seok Choi
  • Patent number: 7856171
    Abstract: A method and apparatus for preventing image blur due to camera motion, and more particularly, to a method and apparatus for sensing a camera motion, calculating an amount of the camera motion based on the sensed camera motion, and expressing the calculated amount of the camera motion to a user so that the user can prevent image blur. The method includes: sensing the camera motion; calculating an amount of the camera motion based on the sensed camera motion; and expressing the calculated amount of the camera motion.
    Type: Grant
    Filed: February 3, 2006
    Date of Patent: December 21, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-chul Bang, Dong-yoon Kim, Eun-seok Choi, Sung-lung Cho, Jong-koo Oh, Eun-kwang Ki, Joon-kee Cho
  • Publication number: 20100314678
    Abstract: A method for fabricating a non-volatile memory device, the method includes alternately stacking inter-layer dielectric layers and sacrificial layers over a substrate, etching the inter-layer dielectric layers and the sacrificial layers to form trenches to expose a surface of the substrate, etching the inter-layer dielectric layers exposed by the trenches to a predetermined thickness, forming junction layers over etched portions of the inter-layer dielectric layers, and burying a layer for a channel within the trenches in which the junction layers have been formed to form a channel.
    Type: Application
    Filed: June 11, 2010
    Publication date: December 16, 2010
    Inventors: Se-Yun LIM, Sang-Hyun Oh, Gyo-Ji Kim, Eun-Seok Choi
  • Publication number: 20100315386
    Abstract: A pointing device calculates a current position of the pointing device based on a point of time at which an incident signal is sensed, and compensates the current position based on a deviation of position of the pointing device which is calculated using the current position of the pointing device. Accordingly, a problem on the GUI caused by position distortion of the pointing device is minimized.
    Type: Application
    Filed: January 21, 2010
    Publication date: December 16, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ho-june YOO, Byung-seok SOH, Eun-seok CHOI, Sang-on CHOI
  • Publication number: 20100315334
    Abstract: An apparatus which adaptively adjusts a filtering coefficient according to motion data and a method thereof are provided. The apparatus sets a filtering coefficient according to motion data, and performs low pass filtering on the motion data according to the set filtering coefficient. Accordingly, a cutoff frequency may be adaptively changed according to moving velocity of a user and thus optimum motion data which are filtered irrespective of movement may be generated.
    Type: Application
    Filed: June 8, 2010
    Publication date: December 16, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Eun-seok CHOI, Byung-seok SOH, Sang-on CHOI, Ho-june YOO, Gee-hyuk LEE
  • Publication number: 20100258852
    Abstract: A method for fabricating a non-volatile memory device includes alternately stacking a plurality of interlayer dielectric layers and a plurality of conductive layers over a substrate, etching the interlayer dielectric layers and the conductive layers to form a trench which exposes a surface of the substrate forming a first material layer over a resulting structure in which the trench is formed, forming a second material layer over the first material layer, removing portions of the second material layer and the first material layer formed on a bottom of the trench to expose the surface of the substrate, removing the second material layer, and burying a channel layer within the trench in which the second material layer is removed.
    Type: Application
    Filed: April 5, 2010
    Publication date: October 14, 2010
    Inventors: Se-Yun Lim, Eun-Seok Choi, Young-Wook Lee, Won-Joon Choi, Ki-Hong Lee, Sang-Bum Lee
  • Patent number: 7764269
    Abstract: The apparatus embodies a tilting interface controlling a signal using information regarding a tilt of a handheld device. The apparatus includes a tilt measurement module measuring the tilt of the handheld device; a history storage module storing, in order of time, a history of information regarding the measured tilt of the handheld device and a history of stop position information of the menu list items, the stop position information being created from the signal output according to the information regarding the measured tilt of the handheld device; and a moving speed control module controlling the speed of moving between the menu list items by setting a candidate range, to which a target item desired by a user belongs, using the histories.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: July 27, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-il Sohn, Dong-yoon Kim, Won-chul Bang, Eun-seok Choi, Sung-jung Cho
  • Publication number: 20100169773
    Abstract: A method for providing a GUI which uses a pointer with a sensuous effect showing that the pointer is moved by gravity is provided. The GUI providing method moves a pointer toward a specific position of a GUI-component if the pointer enters the GUI-component, and outputs at least one of an auditory effect and a tactile effect while the pointer moves toward the specific position. Accordingly, the user moves the pointer to the GUI-component more easily and enjoys entertainment.
    Type: Application
    Filed: November 25, 2009
    Publication date: July 1, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ho-june YOO, Sang-on CHOI, Byung-seok SOH, Eun-seok CHOI, Jong-hyuk JANG
  • Publication number: 20100169839
    Abstract: A method for providing a graphical user interface (GUI) using a pointer having a visual effect showing that the pointer is moved by gravity is provided. If the pointer is determined to be placed on a first area, the pointer is moved according to user's manipulation, and if the pointer is determined to be placed on a second area, the pointer is moved to another position. Accordingly, convenience and entertainment are provided to the user who manipulates the pointer.
    Type: Application
    Filed: December 16, 2009
    Publication date: July 1, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ho-june YOO, Sang-on CHOI, Byung-seok SOH, Eun-seok CHOI, Jong-hyuk JANG
  • Patent number: 7742628
    Abstract: An apparatus and method for increasing the rate of recognition of spatial writing, the apparatus including an inertia sensor module, a storage module, an operation module, and a recognition module. The inertia sensor module measures acceleration of a spatial writing device. The storage module stores predetermined operation information and parameters for tracing the motion trajectory of spatial writing, and pattern information about the motion trajectory. The operation module calculates a velocity of the spatial writing from the acceleration measured using the operation information and parameters, corrects the calculated motion velocity by limiting positional relationships between predetermined points which correspond to the motion trajectory of the spatial writing, and traces the motion trajectory using the corrected motion velocity.
    Type: Grant
    Filed: February 16, 2006
    Date of Patent: June 22, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-chul Bang, Dong-yoon Kim, Jong-koo Oh, Sung-jung Cho, Joon-kee Cho, Eun-seok Choi