Abstract: A method for fabricating a semiconductor device includes forming active regions which are separated by a plurality of first trenches, forming supports which fill the first trenches; etching the active regions and defining second trenches which are shallower than the first trenches, forming spacers on sidewalls of the second trenches, etching bottoms of the second trenches and defining third trenches, forming punch-through preventing patterns which fill lower portions of the third trenches, etching sidewalls which are not protected by the punch-through preventing patterns and the spacers, and forming recessed sidewalls which face each other, and forming buried bit lines in the recessed sidewalls.

Abstract: A semiconductor device includes semiconductor bodies formed substantially perpendicular to a semiconductor substrate, buried bit lines formed in the semiconductor bodies and including a metal silicide; and barrier layers formed under and over the buried bit lines and containing germanium.

Abstract: A method for fabricating a semiconductor device includes etching semiconductor substrate to form bulb-type trenches that define a plurality of active regions in the semiconductor substrate; forming a supporter in each of the bulb-type trenches; dividing each active region, of the plurality of active regions, into a pair of body lines by forming a trench through each active region; and forming a bit line in each body line of the pair of body lines.

Abstract: A method for fabricating a semiconductor device includes etching semiconductor substrate to form bulb-type trenches that define a plurality of active regions in the semiconductor substrate; forming a supporter in each of the bulb-type trenches; dividing each active region, of the plurality of active regions, into a pair of body lines by forming a trench through each active region; and forming a bit line in each body line of the pair of body lines.

Abstract: A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.

Abstract: A method for fabricating vertical channel transistors includes forming a plurality of pillars which have laterally opposing both sidewalls, over a substrate; forming a gate dielectric layer on both sidewalls of the pillars; forming first gate electrodes which cover any one sidewalls of the pillars and shield gate electrodes which cover the other sidewalls of the pillars and have a height lower than the first gate electrodes, over the gate dielectric layer; and forming second gate electrodes which are connected with upper portions of sidewalls of the first gate electrodes.

Abstract: A method for fabricating a semiconductor device includes etching a semiconductor substrate to form bulb-type trenches that define a plurality of active regions in the semiconductor substrate; forming a supporter in each of the bulb-type trenches; dividing each active region, of the plurality of active regions, into a pair of body lines by forming a trench through each active region; and forming a bit line in each body line of the pair of body lines.

Abstract: A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.

Abstract: A method for fabricating a semiconductor device includes etching a semiconductor substrate to form bulb-type trenches that define a plurality of active regions in the semiconductor substrate; forming a supporter in each of the bulb-type trenches; dividing each active region, of the plurality of active regions, into a pair of body lines by forming a trench through each active region; and forming a bit line in each body line of the pair of body lines.

Abstract: A semiconductor device includes semiconductor bodies formed substantially perpendicular to a semiconductor substrate, buried bit lines formed in the semiconductor bodies and including a metal silicide; and barrier layers formed under and over the buried bit lines and containing germanium.

Abstract: A method for fabricating vertical channel transistors includes forming a plurality of pillars which have laterally opposing both sidewalls, over a substrate; forming a gate dielectric layer on both sidewalls of the pillars; forming first gate electrodes which cover any one sidewalls of the pillars and shield gate electrodes which cover the other sidewalls of the pillars and have a height lower than the first gate electrodes, over the gate dielectric layer; and forming second gate electrodes which are connected with upper portions of sidewalls of the first gate electrodes.

Abstract: A method for fabricating a semiconductor device includes etching a semiconductor substrate to form bulb-type trenches that define a plurality of active regions in the semiconductor substrate; forming a supporter in each of the bulb-type trenches; dividing each active region, of the plurality of active regions, into a pair of body lines by forming a trench through each active region; and forming a bit line in each body line of the pair of body lines.

Abstract: A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.

Abstract: A method for forming an impurity region of a vertical transistor includes forming an impurity ion junction region within a semiconductor substrate, and forming a trench by etching the semiconductor substrate in which the impurity ion junction region is formed. The etching process is performed to remove a portion of the impurity ion junction region, so that a remaining portion of the impurity ion junction region is exposed to a lower side wall of the trench to serve as a buried bit line junction region.

Abstract: A semiconductor device includes semiconductor bodies formed substantially perpendicular to a semiconductor substrate, buried bit lines formed in the semiconductor bodies and including a metal silicide; and barrier layers formed under and over the buried bit lines and containing germanium.

Abstract: A method for forming an impurity region of a vertical transistor includes forming an impurity ion junction region within a semiconductor substrate, and forming a trench by etching the semiconductor substrate in which the impurity ion junction region is formed. The etching process is performed to remove a portion of the impurity ion junction region, so that a remaining portion of the impurity ion junction region is exposed to a lower side wall of the trench to serve as a buried bit line junction region.

Abstract: A method for fabricating vertical channel transistors includes forming a plurality of pillars which have laterally opposing both sidewalls, over a substrate; forming a gate dielectric layer on both sidewalls of the pillars; forming first gate electrodes which cover any one sidewalls of the pillars and shield gate electrodes which cover the other sidewalls of the pillars and have a height lower than the first gate electrodes, over the gate dielectric layer; and forming second gate electrodes which are connected with upper portions of sidewalls of the first gate electrodes.

Abstract: A method for fabricating a semiconductor device includes forming at least one body having two sidewalls by vertically etching a semiconductor substrate, forming a protective layer having open parts that expose portions of the both sidewalls of the body, forming a buffer layer that fills the open parts, and forming a buried bit line in the body by siliciding the buffer layer and a portion of the body between the buffer layer.

Abstract: A method for fabricating a semiconductor device includes forming active regions which are separated by a plurality of first trenches, forming supports which fill the first trenches; etching the active regions and defining second trenches which are shallower than the first trenches, forming spacers on sidewalls of the second trenches, etching bottoms of the second trenches and defining third trenches, forming punch-through preventing patterns which fill lower portions of the third trenches, etching sidewalls which are not protected by the punch-through preventing patterns and the spacers, and forming recessed sidewalls which face each other, and forming buried bit lines in the recessed sidewalls.

Abstract: A semiconductor device includes body lines, formed substantially perpendicular to a substrate, and having recessed sidewalls, buried bit lines, buried in the recessed sidewalls, and including a metal silicide, and a barrier layer interposed between each of the buried bit lines and the body lines corresponding thereto, and containing germanium.