Abstract: A process for removing iodine using gold particles includes contacting a solution including iodine, with gold particles. The iodine is adsorbed onto the gold particles and then removed. A device for removing iodine using gold particles includes gold particles in a stationary phase and is configured to contact a solution including iodine, with gold particles, to thus adsorb the iodine onto the gold particles and remove the iodine.

Abstract: Provided is a steerable electrode catheter assembly capable of easily contacting an affected part of a patient when performing an operation on a human body while adjusting a direction of the electrode catheter assembly. In detail, provided is a steerable electrode catheter assembly whereby a length by which a catheter is inserted into an affect part of a patient during an operation on a human body may be easily adjusted and also an angle of a tip portion of the catheter may be easily adjusted by a user.

Abstract: A process for removing iodine using gold particles includes contacting a solution including iodine, with gold particles. The iodine is adsorbed onto the gold particles and then removed. A device for removing iodine using gold particles includes gold particles in a stationary phase and is configured to contact a solution including iodine, with gold particles, to thus adsorb the iodine onto the gold particles and remove the iodine.

Abstract: Provided is a steerable electrode catheter assembly capable of easily contacting an affected part of a patient when performing an operation on a human body while adjusting a direction of the electrode catheter assembly. In detail, provided is a steerable electrode catheter assembly whereby a length by which a catheter is inserted into an affect part of a patient during an operation on a human body may be easily adjusted and also an angle of a tip portion of the catheter may be easily adjusted by a user.

Abstract: A semiconductor package includes a substrate having a plurality of through holes for interconnecting electrically conductive traces formed on upper and lower surfaces of the substrate. The through holes are classified into a first set of through holes and a second set of through holes. The second set of through holes is located exterior of the first set of through holes, and surrounds the first set of through holes. A die is mounted on the upper surface of the substrate and is connected electrically to the first set of through holes. A metal shield is disposed on the substrate for enclosing the die therein and is connected electrically to the second set of through holes. A molding resin encapsulates the metal shield, the die on the substrate and fills a gap confined between the metal shield and the die.

Abstract: The present invention relates to a semiconductor based parabolic waveguide-type collimating lens and a monolithically integrated type tunable external cavity laser diode light source.

Abstract: Provided is an apparatus and method for simultaneous optical wavelength conversion and optical clock signal extraction using semiconductor optical amplifiers (SOAs).

Abstract: The present invention relates to a semiconductor based parabolic waveguide-type collimating lens and a monolithically integrated type tunable external cavity laser diode light source.

Abstract: Provided is an optical semiconductor device including: an active layer having at least one quantum well layer and at least one barrier layer; a clad layer formed adjacent to the active layer; and a tunneling barrier layer formed between the active layer and the clad layer to be connected to the quantum well layer and formed of a material having a band-gap energy larger than the barrier layer, whereby it is possible to improve the drive characteristics at a high temperature and a high drive current by increasing a confinement effect of carriers such as electrons and holes in the active layer.

Abstract: Provided is a waveguide photodetector including: a first clad layer disposed on a substrate; a core layer disposed on the first clad layer and for absorbing predetermined light; a second clad layer disposed on the core layer; and at least one subsidiary layer inserted in the first clad layer and the second clad layer. In this structure, the photodetector has about the same spot size as that of an optical fiber or planar lightwave circuit (PLC), so that incident light can be absorbed without loss, and the photodetector can more efficiently combine with the optical fiber or PLC and operate even at high power.

Abstract: Provided is a method of fabricating a ridge type waveguide integrated semiconductor optical device.

Abstract: Provided is a method for manufacturing a planar buried semiconductor optical amplifier in which a spot size converter with a double-core structure is integrated, comprising the steps of: after growing a lower cladding layer, a lower waveguide layer and an upper cladding layer on a substrate, patterning a portion of thickness of the lower cladding layer, the lower waveguide layer and the upper cladding layer through an etching process using a dielectric layer pattern to form a lower waveguide; growing a planarization layer on the etched portions of the lower cladding layer, the lower waveguide layer and the upper cladding layer to smooth a surface; after removing the dielectric layer pattern, growing a space layer, an upper waveguide layer and a first cladding layer on the overall upper surface; patterning the first cladding layer, the upper waveguide layer and the space layer through the etching process using the dielectric layer pattern to form an upper waveguide having a horizontal taper area; after growing

Abstract: An apparatus for a semiconductor device includes: a chamber having upper and lower portions, a volume of the lower portion being greater than a volume of the upper portion; a susceptor in the chamber, the susceptor having a substrate on a top surface thereof; an injector injecting process gases into the chamber; a coil unit over the chamber; a radio frequency power supply connected to the coil unit; and an exhaust through the chamber.