Abstract: A method for displaying a message in a messenger service by a user terminal is proposed. The method may include receiving the message from a server. The method may also include receiving a mask command for the message from the server when text information extracted from the message satisfies a preset condition. The method may further include displaying a mask message corresponding to the message in a chat room of the messenger service based on the mask command.

Abstract: Provided is a display device including a display panel, an optical sensor, a timing controller, a scan driver, a data driver, and an image controller. The timing controller controls an image refresh rate of the display panel based on are fresh rate control signal. Thus, the display device provides improved visibility.

Abstract: A printed circuit board includes a first board including a plurality of first insulating layers and a plurality of first wiring layers disposed between the plurality of first insulating layers, respectively; and a second board disposed on one surface of the first board and including a plurality of second insulating layers and a plurality of second wiring layers disposed on or between the plurality of second insulating layers, respectively. At least one of the plurality of first insulating layers has a thickness less than a thickness of at least one of the plurality of second insulating layers. The first board further includes a through-via penetrating each of the plurality of first insulating layers and connected to one of the plurality of second wiring layers.

Abstract: A suction unit control method includes simulating an air flow about a suction port, through which fumes generated when a laser beam is radiated on a target substrate on a stage unit to cut the target substrate are sucked up, installing an air blower on three or four sides around a laser cutting end at a height close to the suction port, controlling on and off of first to fourth solenoid valves of the air blower based on a movement of the stage unit while performing laser cutting on the target substrate while moving the stage unit.

Abstract: The present invention relates to an immersion cooling apparatus including a chamber, a rack module installed in the chamber and having a plurality of slots each having a cooling target mounted thereon, a supply part connected to the chamber and configured to supply a cooling fluid to the inside of the chamber, and a discharge part disposed to be spaced apart from the supply part and configured to discharge the cooling fluid from the chamber.

Abstract: The present invention relates to: a substituted thiazolidinedione derivative compound having a novel structure acting as a sterol regulatory element-binding protein-1 (SREBP1) inhibitor, a hydrate thereof, or a pharmaceutically acceptable salt thereof; and a pharmaceutical composition for preventing or treating cancer, comprising same as an active ingredient.

Abstract: The present invention relates to a composition for administering a double-stranded oligonucleotide structure using an ultrasonic nebulizer. According to the method, the double-stranded oligonucleotide according to the present invention forms self-assembled nanoparticles, which are 90 nm in size and have a neutral charge, and it is possible to deliver the double-stranded oligonucleotide specifically to the nasal cavity and lungs while maintaining not only the same concentration, molecular weight, purity, nanoparticle size, and osmolality as those of the stock material but also the target gene inhibitory activity without cytotoxicity. Thus, the present invention may be useful for the prevention or treatment of respiratory viral infections including COVID-19, pulmonary fibrosis caused by viral infection, or respiratory diseases.

Abstract: An autonomous driving robot includes a driving unit that moves the autonomous robot; a camera; a traveling distance measurement sensor; and a control unit that estimates a location of the autonomous robot using a captured image and traveling distance information. In this case, the operation control program generates a robot viewpoint map based on the image captured by the camera, estimates a location of the autonomous robot based on the robot viewpoint map and the measured traveling distance information, and generates a global map based on the robot viewpoint map and position estimation information, and the operation control program inputs the generated robot viewpoint map and global map into a style-transfer model, and inputs a style-transferred robot viewpoint map and a style-transferred global map output by the style-transfer model into the operation agent to correct the estimated position.

Abstract: The present disclosure relates to a pharmaceutical composition for suppressing cancer metastasis containing, as an active ingredient, an activator compound of the cancer metastasis inhibitor Nm23, a stereoisomer thereof, or a pharmaceutically acceptable salt thereof. The compound according to the present disclosure may suppress the metastasis of cancer cells by promoting the activity of Nm23 associated with cancer metastasis, and thus may be useful as a pharmaceutical composition for suppressing cancer metastasis.

Abstract: The present disclosure relates to a pharmaceutical composition for suppressing cancer metastasis containing, as an active ingredient, an activator compound of the cancer metastasis inhibitor Nm23, a stereoisomer thereof, or a pharmaceutically acceptable salt thereof. The compound according to the present disclosure may suppress the metastasis of cancer cells by promoting the activity of Nm23 associated with cancer metastasis, and thus may be useful as a pharmaceutical composition for suppressing cancer metastasis.

Abstract: A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer.

Abstract: A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type. The source/drain regions have a second conductivity type. A concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region. The semiconductor device may be used in a sense amplifier of a memory device.

Abstract: A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type. The source/drain regions have a second conductivity type. A concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region. The semiconductor device may be used in a sense amplifier of a memory device.

Abstract: A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer.

Abstract: An FRAM device includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connected between the word lines and bit line bars. The first plate lines can be connected to upper electrodes of the first ferroelectric capacitors. The second plate lines can be connected to upper electrodes of the second ferroelectric capacitors. Thus, the first ferroelectric capacitors connected to the bit lines and the second ferroelectric capacitors connected to the bit line bars can be connected to the different plate lines, so that data can be output from any one of the bit line and the bit line bar. As a result, a layout of a core region can be simplified.

Abstract: An FRAM device can includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connected between the word lines and bit line bars. The first plate lines can be connected to upper electrodes of the first ferroelectric capacitors. The second plate lines can be connected to upper electrodes of the second ferroelectric capacitors. Thus, the first ferroelectric capacitors connected to the bit lines and the second ferroelectric capacitors connected to the bit line bars can be connected to the different plate lines, so that data can be output from any one of the bit line and the bit line bar. As a result, a layout of a core region can be simplified.