Patents by Inventor Eunyeong YANG

Eunyeong YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240030346
    Abstract: An ambipolar transistor according to the embodiment includes: a back electrode; a first ferroelectric pattern and a second ferroelectric pattern located on the back electrode and spaced apart from each other; a first electrode located on the first ferroelectric pattern and a second electrode located on the second ferroelectric pattern; a channel part connected between the first electrode and the second electrode, and including a first channel doped with a first type and a second channel doped with a second type; and a gate stack located on the channel part.
    Type: Application
    Filed: July 23, 2023
    Publication date: January 25, 2024
    Inventors: Jiwon Chang, Eunyeong YANG