Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: The present invention relates to a method and system for providing language learning services. The method of providing language learning services, according to the present invention, the method may include: activating, in response to receiving an input for acquiring a learning target image through a user terminal, a camera of the user terminal; specifying at least a portion of an image taken by the camera as the learning target image; receiving language learning information for the learning target image from a server; providing the language learning information to the user terminal; and storing, based on a request for storing of the language learning information, the language learning information in association with the learning target image, such that the learning target image is used in conjunction with learning of the language learning information.

Abstract: The present technology relates to systems and associated methods for measuring properties of particles in a solution. In one or more embodiments, a particle measurement system is configured to generate a reference signal, communicate the reference signal across a plurality of resistors and overlapping pairs of electrodes that define detection regions for particulates traveling through a microchannel, and measure various properties of the particles based on detecting changes in the communicated reference signal.

Abstract: The present invention relates to a method of culturing mesenchymal stem cells using gamma-irradiated serum, and more particularly to a method for culturing mesenchymal stem cells, which can improve the adhesion and proliferation rate of stem cells using a medium containing gamma-irradiated serum and an antioxidant. The method for culturing mesenchymal stem cells according to the present invention can restore the adhesion and proliferation rate of stem cells when culturing the stem cells using gamma-irradiated FBS, which is safe from contamination sources but reduces the efficiency of adhesion and proliferation of the cells. Thus, the inventive method is useful for the production of stem cells for cell therapy.

Abstract: The light emitting sheet excellent in light guiding performance according to an embodiment of the present disclosure may include: a base film; and a light guide pattern portion in which a pattern set on a surface of the base film is repeatedly formed, wherein the light guide pattern portion has a hexagonal shape.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, an organic electroluminescent device having improved driving voltage, power efficiency and/or lifetime characteristics compared to conventional organic electroluminescent devices can be provided.

Abstract: The present disclosure relates to an apparatus for controlling movement of an ultrasonic wave generating unit, the apparatus characterized by comprising: a transfer unit for moving the ultrasonic wave generating unit; and a control unit for controlling the operation of the ultrasonic wave generating unit and the transfer unit, wherein the control unit controls the ultrasonic wave generating unit such that, when the ultrasonic wave generating unit moves, ultrasonic waves are irradiated at intervals to the skin on a movement path of the ultrasonic wave generating unit.

Abstract: The present invention provides a lithium secondary battery. In particular, the present invention provides an adhesive pad for a lithium secondary battery in which the adhesive pad including the substrate layer and the adhesive layer formed on at least one surface of the substrate layer is adhered to at least one surface of the exterior material through the adhesive layer, such that it is possible to reduce the danger of ignition or explosion by improving penetration safety when applying to the lithium secondary battery, and a lithium secondary battery including the same.

Abstract: Described are methods and systems for identifying phenotypic traits of an individual from nucleotide sequence data. The methods and systems are useful even when the identity of the individual or phenotypic traits of the individual is unknown.

Abstract: The present invention provides a lithium secondary battery. In particular, the present invention provides an adhesive pad for a lithium secondary battery in which the adhesive pad including the substrate layer and the adhesive layer formed on at least one surface of the substrate layer is adhered to at least one surface of the exterior material through the adhesive layer, such that it is possible to reduce the danger of ignition or explosion by improving penetration safety when applying to the lithium secondary battery, and a lithium secondary battery including the same.

Abstract: A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Abstract: A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Abstract: A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Abstract: A method of manufacturing a semiconductor device having buried gates may include forming a stacked structure of sequentially stacked first mask patterns and second mask patterns with equal widths to expose active regions and isolation regions of a semiconductor substrate. After forming reduced first mask patterns by decreasing the width only of the first mask patterns, trenches may be formed in the active regions and the isolation regions by etching the exposed portions of the semiconductor substrate using the second mask patterns as an etch mask. Then, gate insulating films may be formed on inner walls of the trenches in the active regions, and a conductive material may be buried into the trenches in the active regions and the isolation regions to form gates.

Abstract: A video processing method and apparatus are provided. Video signals including channel information relating to one of a plurality of channels, and video identification information relating to an identity of a picture between signals are received. A receiving quality of each video signal in accordance with the video signals having the same video identification information, but different channel information is evaluated. A picture is displayed by processing a video signal including a best receiving quality among the video signals. Thus, a video signal corresponding to an identical picture is received through a high quality channel to be processed and displayed.

Abstract: A digital physical receiving apparatus and a receiving method thereof. The digital broadcasting receiving apparatus includes a channel information storage unit to store information on a receivable physical channel among physical channels allocated to discriminate digital broadcasting signals transmitted from a pluarlity of broadcasting stations, and a transceiver identification (Tx ID) allocated to discriminate a transceiving region of the broadcasting signal, an input unit to input a virtual channel of the digital broadcasting signal and a receiving region corresponding to a desired analog broadcasting channel, a control unit to select the physical channel having the inputted virtual channel and making a channel selecting priority list when a plurality of the physical channels are selected, and an on-screen display (OSD) processing unit to display the channel selecting priority list when the broadcasting signal of the first priority channel is displayed.

Abstract: A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Abstract: In a semiconductor device including a transistor having an embedded gate, and methods of manufacturing the same, a substrate is divided into first and second regions. A gate trench is formed in the first region, a first gate structure partially fills the gate trench and a passivation layer pattern is provided inside the gate trench and positioned on the first gate structure. A first source/drain is provided adjacent to sidewalls of the first gate structure. A second gate structure is provided in the second region and has a silicon oxide layer, a conductive layer pattern and a metal silicide layer pattern stacked on the conductive layer pattern. A second source/drain is provided adjacent to sidewalls of the second gate structure. Defects due to formation of reactants may be reduced in a formation process of the above-described semiconductor device, improving reliability and operating characteristics.

Abstract: A method of manufacturing a semiconductor device having buried gates may include forming a stacked structure of sequentially stacked first mask patterns and second mask patterns with equal widths to expose active regions and isolation regions of a semiconductor substrate. After forming reduced first mask patterns by decreasing the width only of the first mask patterns, trenches may be formed in the active regions and the isolation regions by etching the exposed portions of the semiconductor substrate using the second mask patterns as an etch mask. Then, gate insulating films may be formed on inner walls of the trenches in the active regions, and a conductive material may be buried into the trenches in the active regions and the isolation regions to form gates.

Abstract: A method of forming a semiconductor device is provided. The method includes preparing a semiconductor substrate to include a cell region and a peripheral region and forming a first mask layer on the semiconductor substrate. First hard mask patterns that are configured to expose the first mask layer are formed on the first mask layer in the cell region. A second mask layer that is configured to conformably cover the first hard mask patterns is formed. A second hard mask pattern is formed between the first hard mask patterns, wherein the second hard mask pattern is configured to contact a lateral surface of the second mask layer. The second mask layer interposed between the first hard mask patterns and the second hard mask pattern is removed. A plurality of trenches are etched in the semiconductor substrate of the cell region using the first hard mask patterns and the second hard mask pattern as a mask.