Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

Abstract: A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

Abstract: Novel benzoarylureido compounds and a use thereof for prevention and/or treatment of the neurodegenerative brain disease are provided. The neurodegenerative brain diseases may include Alzheimer's disease, dementia, Parkinson's disease, stroke, amyloidosis, Pick's disease, Lou Gehrig's disease, Huntington's disease, Creutzfeld-Jakob disease, and the like.

Abstract: Novel benzoarylureido compounds and a use thereof for prevention and/or treatment of the neurodegenerative brain disease are provided. The neurodegenerative brain diseases may include Alzheimer's disease, dementia, Parkinson's disease, stroke, amyloidosis, Pick's disease, Lou Gehrig's disease, Huntington's disease, Creutzfeld-Jakob disease, and the like.

Abstract: A method for removing impurities and deposits formed in a contact hole of a semiconductor device. The method comprises the step of bathing the semiconductor device in a solution having concentrations of between about 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2 to 4 weight percent of H2O2, 0.05 to 0.25 weight percent of HF, and the remaining percent of deionized water. Such bathing is preferably carried out with the solution maintained at a constant temperature of between about 20 to 25° C. for about 1 to 5 minutes.

Abstract: A method for manufacturing semiconductor devices including removing a photoresist and cleaning the substrate after removing the photoresist. The method for manufacturing semiconductor devices comprises removing the photoresist remaining on a semiconductor substrate using a dry etching process. The substrate is subsequently cleaned using a cleaning composition comprising a mixture of 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2.0 to 4.0 weight percent of hydrogen peroxide (H.sub.2 O.sub.2), 0.05 to 0.25 weight percent of hydrofluoric acid (HF), and the remaining weight percent of deionized water.

Abstract: Aqueous compositions for etching silicon nitride films present on wafers used in microelectronic devices comprise hydrogen fluoride and phosphate. Methods for etching silicon nitride films present in wafers to be used in microelectronic devices comprise exposing the wafers to the aqueous compositions.