Patents by Inventor Eunae Kim

Eunae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250120073
    Abstract: Provided is an integrated circuit device including a substrate having a cell array area, a peripheral circuit area surrounding the cell array area, and an interface area between the cell array area and the peripheral circuit area, a plurality of bit lines extending in a first horizontal direction on the cell array area and the interface area and placed parallel to each other in a second horizontal direction perpendicular to the first horizontal direction, insulating capping patterns extending in the first horizontal direction on the bit lines, a plurality of contact plugs vertically connected to the bit lines, respectively, in the interface area, and a plurality of contact pads disposed on the plurality of contact plugs, respectively, wherein the contact plugs are spaced apart from centers of the bit lines in the second horizontal direction at a certain gap in the second horizontal direction.
    Type: Application
    Filed: October 4, 2024
    Publication date: April 10, 2025
    Inventors: Sunghoon Bae, Seungbo Ko, Euna Kim
  • Publication number: 20240155833
    Abstract: A semiconductor device includes a substrate having an active region; word line structures in the substrate and extending in parallel to each other in a first horizontal direction; bit line structures on the substrate and the word line structures and extending in parallel to each other in a second horizontal direction that intersects the first horizontal direction; storage node contacts on a side wall of each of the bit line structures and electrically connected to the active region; and a fence structure having first line pattern portions on the word line structures and extending in the first horizontal direction, second line pattern portions extending in the second horizontal direction, and pillar portions extending from the first line pattern portions between the bit line structures in a vertical direction that is perpendicular to an upper surface of the substrate.
    Type: Application
    Filed: June 26, 2023
    Publication date: May 9, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Junhyeok AHN, Euna KIM, Myeongdong LEE
  • Patent number: 11917815
    Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.
    Type: Grant
    Filed: March 20, 2023
    Date of Patent: February 27, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyosub Kim, Keunnam Kim, Dongoh Kim, Bongsoo Kim, Euna Kim, Chansic Yoon, Kiseok Lee, Hyeonok Jung, Sunghee Han, Yoosang Hwang
  • Publication number: 20240040774
    Abstract: An integrated circuit device includes a substrate and a plurality of cell patterns that have a pillar shape, wherein the plurality of cell patterns comprise a plurality of first cell groups that are arranged along a first horizontal direction and each comprise a plurality of first cell patterns arranged in a row along a second horizontal direction, and a plurality of second cell groups that are spaced apart from the plurality of first cell groups, are arranged along the first horizontal direction, and each comprise a plurality of second cell patterns arranged in a row along the second horizontal direction, and wherein respective side surfaces of the plurality of second cell patterns have respective concave portions that are recessed inward along respective side surfaces of the plurality of first cell patterns that are adjacent to respective ones of the plurality of second cell patterns.
    Type: Application
    Filed: June 27, 2023
    Publication date: February 1, 2024
    Inventors: Euna Kim, Eunjung Kim
  • Patent number: 11805639
    Abstract: A semiconductor device includes a substrate including an active region, a first bitline structure and a second bitline structure that extend side by side on the substrate, a storage node contact electrically connected to the active region between the first and second bitline structures, a lower landing pad between the first and second bitline structures and on the storage node contact, an upper landing pad in contact with the first bitline structure and electrically connected to the lower landing pad, and a capping insulating layer. A lower surface of the upper landing pad in contact with the first bitline structure and a lower surface of the capping insulating layer in contact with the lower landing pad each include a portion in which a horizontal separation distance is increased from the adjacent upper landing pad in a direction toward the substrate.
    Type: Grant
    Filed: July 12, 2021
    Date of Patent: October 31, 2023
    Inventors: Euna Kim, Keunnam Kim, Kiseok Lee, Wooyoung Choi, Sunghee Han
  • Publication number: 20230262962
    Abstract: An integrated circuit device includes a substrate having an active area, bit line structures on the substrate, the bit line structures including an insulating spacer on each sidewall thereof, a buried contact between the bit line structures, the buried contact being connected to the active area, an insulation capping pattern on each of the bit line structures, a barrier conductive layer covering side surfaces of the insulation capping pattern, and an upper surface and side surfaces of the insulating spacer, and a landing pad electrically connected to the buried contact, the landing pad vertically overlapping one of the bit line structures on the insulation capping pattern and the barrier conductive layer.
    Type: Application
    Filed: February 9, 2023
    Publication date: August 17, 2023
    Inventors: Miso MYUNG, Keunnam KIM, Euna KIM, Huijung KIM, Sangho LEE
  • Publication number: 20230232618
    Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.
    Type: Application
    Filed: March 20, 2023
    Publication date: July 20, 2023
    Inventors: Hyosub Kim, Keunnam Kim, Dongoh Kim, Bongsoo Kim, Euna Kim, Chansic Yoon, Kiseok Lee, Hyeonok Jung, Sunghee Han, Yoosang Hwang
  • Patent number: 11616066
    Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.
    Type: Grant
    Filed: July 23, 2021
    Date of Patent: March 28, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyosub Kim, Keunnam Kim, Dongoh Kim, Bongsoo Kim, Euna Kim, Chansic Yoon, Kiseok Lee, Hyeonok Jung, Sunghee Han, Yoosang Hwang
  • Publication number: 20220139921
    Abstract: A semiconductor device includes a substrate including an active region, a first bitline structure and a second bitline structure that extend side by side on the substrate, a storage node contact electrically connected to the active region between the first and second bitline structures, a lower landing pad between the first and second bitline structures and on the storage node contact, an upper landing pad in contact with the first bitline structure and electrically connected to the lower landing pad, and a capping insulating layer. A lower surface of the upper landing pad in contact with the first bitline structure and a lower surface of the capping insulating layer in contact with the lower landing pad each include a portion in which a horizontal separation distance is increased from the adjacent upper landing pad in a direction toward the substrate.
    Type: Application
    Filed: July 12, 2021
    Publication date: May 5, 2022
    Inventors: EUNA KIM, Keunnam Kim, Kiseok Lee, Wooyoung Choi, Sunghee Han
  • Publication number: 20210351184
    Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.
    Type: Application
    Filed: July 23, 2021
    Publication date: November 11, 2021
    Inventors: Hyosub Kim, Keunnam Kim, Dongoh Kim, Bongsoo Kim, Euna Kim, Chansic Yoon, Kiseok Lee, Hyeonok Jung, Sunghee Han, Yoosang Hwang
  • Patent number: 11088143
    Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: August 10, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyosub Kim, Keunnam Kim, Dongoh Kim, Bongsoo Kim, Euna Kim, Chansic Yoon, Kiseok Lee, Hyeonok Jung, Sunghee Han, Yoosang Hwang
  • Publication number: 20210066305
    Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.
    Type: Application
    Filed: June 9, 2020
    Publication date: March 4, 2021
    Inventors: Hyosub Kim, Keunnam Kim, Dongoh Kim, Bongsoo Kim, Euna Kim, Chansic Yoon, Kiseok Lee, Hyeonok Jung, Sunghee Han, Yoosang Hwang
  • Patent number: 10177803
    Abstract: There is disclosed a mobile terminal comprising a rear case made of metal and forming an exterior of a rear surface of the mobile terminal, the rear case comprising a first slit; a reinforcing member made of a non-conductive material, coupled to a first region of the rear having the first slit, wherein the reinforcing member protrude inward of the rear case and form an uneven portion; a first conductive pattern coupled to an inner surface of the rear case and forming a cut-off region in the first region, the first conductive pattern formed in a ring shape; and a second conductive pattern provided in a corresponding shape to uneven portion of the reinforcing member and electrically connecting the cut-off region of the first conductive pattern.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: January 8, 2019
    Assignee: LG ELECTRONICS INC.
    Inventors: Euna Kim, Minsoo Kim, Youngil Kim, Byeonggi Moon
  • Patent number: 9912792
    Abstract: The present invention provides a mobile terminal comprising: a terminal body having a display part on the front side thereof; and a back input part exposed to the back side of the body and having a first button part for receiving a push input of a first function, wherein the first button part comprises: an exposed part having a colored layer and exposed to the outside; a knob part formed on the back side thereof so as to fix the exposed part; and a body part covering the knob part and formed to be integrated with the exposed part.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: March 6, 2018
    Assignee: LG ELECTRONICS INC.
    Inventors: Sangwook Hahn, Sooyong Song, Sangchul Jeon, Youngjin Hyun, Hyoyeol Lee, Euna Kim, Woohun Lee
  • Publication number: 20180019780
    Abstract: There is disclosed a mobile terminal comprising a rear case made of metal and forming an exterior of a rear surface of the mobile terminal, the rear case comprising a first slit; a reinforcing member made of a non-conductive material, coupled to a first region of the rear having the first slit, wherein the reinforcing member protrude inward of the rear case and form an uneven portion; a first conductive pattern coupled to an inner surface of the rear case and forming a cut-off region in the first region, the first conductive pattern formed in a ring shape; and a second conductive pattern provided in a corresponding shape to uneven portion of the reinforcing member and electrically connecting the cut-off region of the first conductive pattern.
    Type: Application
    Filed: July 3, 2017
    Publication date: January 18, 2018
    Applicant: LG Electronics Inc.
    Inventors: Euna Kim, Minsoo Kim, Youngil Kim, Byeonggi Moon
  • Publication number: 20160165027
    Abstract: The present invention provides a mobile terminal comprising: a terminal body having a display part on the front side thereof; and a back input part exposed to the back side of the body and having a first button part for receiving a push input of a first function, wherein the first button part comprises: an exposed part having a colored layer and exposed to the outside; a knob part formed on the back side thereof so as to fix the exposed part; and a body part covering the knob part and formed to be integrated with the exposed part.
    Type: Application
    Filed: February 21, 2014
    Publication date: June 9, 2016
    Applicant: LG ELECTRONICS INC.
    Inventors: Sangwook HAHN, Sooyong SONG, Sangchul JEON, Youngjin HYUN, Hyoyeol LEE, Euna KIM, Woohun LEE
  • Patent number: 9181481
    Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. The liquid crystal layer includes a liquid crystal composition including an alkenyl liquid crystal and an antioxidant component including at least one selected from an antioxidant and a derivative thereof. In an embodiment, the antioxidant component is present in an amount of greater than 0 ppm and equal to or less than about 10,000 ppm relative to the total weight of the liquid crystal composition.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: November 10, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jihong Bae, Kyungmin Kim, Min-Jae Kim, Min-Hee Kim, Euna Kim, Joon-Hyung Park, Keunchan Oh, Jinhyeong Lee
  • Publication number: 20150138493
    Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. The liquid crystal layer includes a liquid crystal composition including an alkenyl liquid crystal and an antioxidant component including at least one selected from an antioxidant and a derivative thereof. In an embodiment, the antioxidant component is present in an amount of greater than 0 ppm and equal to or less than about 10,000 ppm relative to the total weight of the liquid crystal composition.
    Type: Application
    Filed: January 23, 2015
    Publication date: May 21, 2015
    Inventors: Jihong BAE, Kyungmin KIM, Min-Jae KIM, Min-Hee KIM, Euna KIM, Joon-Hyung PARK, Keunchan OH, Jinhyeong LEE
  • Patent number: 8968842
    Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. The liquid crystal layer includes a liquid crystal composition including an alkenyl liquid crystal and an antioxidant component including at least one selected from an antioxidant and a derivative thereof. In an embodiment, the antioxidant component is present in an amount of greater than 0 ppm and equal to or less than about 10,000 ppm relative to the total weight of the liquid crystal composition.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: March 3, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jihong Bae, Kyungmin Kim, Min-Jae Kim, Min-Hee Kim, Euna Kim, Joon-Hyung Park, Keunchan Oh, Jinhyeong Lee
  • Publication number: 20140204329
    Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. The liquid crystal layer includes a liquid crystal composition including an alkenyl liquid crystal and an antioxidant component including at least one selected from an antioxidant and a derivative thereof. In an embodiment, the antioxidant component is present in an amount of greater than 0 ppm and equal to or less than about 10,000 ppm relative to the total weight of the liquid crystal composition.
    Type: Application
    Filed: May 29, 2013
    Publication date: July 24, 2014
    Applicant: Samsung Display Co., Ltd.
    Inventors: Jihong BAE, Kyungmin KIM, Min-Jae KIM, Min-Hee KIM, Euna KIM, Joon-Hyung PARK, KEUNCHAN OH, JINHYEONG LEE