Abstract: Provided is an integrated circuit device including a substrate having a cell array area, a peripheral circuit area surrounding the cell array area, and an interface area between the cell array area and the peripheral circuit area, a plurality of bit lines extending in a first horizontal direction on the cell array area and the interface area and placed parallel to each other in a second horizontal direction perpendicular to the first horizontal direction, insulating capping patterns extending in the first horizontal direction on the bit lines, a plurality of contact plugs vertically connected to the bit lines, respectively, in the interface area, and a plurality of contact pads disposed on the plurality of contact plugs, respectively, wherein the contact plugs are spaced apart from centers of the bit lines in the second horizontal direction at a certain gap in the second horizontal direction.

Abstract: A semiconductor device includes a substrate having an active region; word line structures in the substrate and extending in parallel to each other in a first horizontal direction; bit line structures on the substrate and the word line structures and extending in parallel to each other in a second horizontal direction that intersects the first horizontal direction; storage node contacts on a side wall of each of the bit line structures and electrically connected to the active region; and a fence structure having first line pattern portions on the word line structures and extending in the first horizontal direction, second line pattern portions extending in the second horizontal direction, and pillar portions extending from the first line pattern portions between the bit line structures in a vertical direction that is perpendicular to an upper surface of the substrate.

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Abstract: An integrated circuit device includes a substrate and a plurality of cell patterns that have a pillar shape, wherein the plurality of cell patterns comprise a plurality of first cell groups that are arranged along a first horizontal direction and each comprise a plurality of first cell patterns arranged in a row along a second horizontal direction, and a plurality of second cell groups that are spaced apart from the plurality of first cell groups, are arranged along the first horizontal direction, and each comprise a plurality of second cell patterns arranged in a row along the second horizontal direction, and wherein respective side surfaces of the plurality of second cell patterns have respective concave portions that are recessed inward along respective side surfaces of the plurality of first cell patterns that are adjacent to respective ones of the plurality of second cell patterns.

Abstract: A semiconductor device includes a substrate including an active region, a first bitline structure and a second bitline structure that extend side by side on the substrate, a storage node contact electrically connected to the active region between the first and second bitline structures, a lower landing pad between the first and second bitline structures and on the storage node contact, an upper landing pad in contact with the first bitline structure and electrically connected to the lower landing pad, and a capping insulating layer. A lower surface of the upper landing pad in contact with the first bitline structure and a lower surface of the capping insulating layer in contact with the lower landing pad each include a portion in which a horizontal separation distance is increased from the adjacent upper landing pad in a direction toward the substrate.

Abstract: An integrated circuit device includes a substrate having an active area, bit line structures on the substrate, the bit line structures including an insulating spacer on each sidewall thereof, a buried contact between the bit line structures, the buried contact being connected to the active area, an insulation capping pattern on each of the bit line structures, a barrier conductive layer covering side surfaces of the insulation capping pattern, and an upper surface and side surfaces of the insulating spacer, and a landing pad electrically connected to the buried contact, the landing pad vertically overlapping one of the bit line structures on the insulation capping pattern and the barrier conductive layer.

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Abstract: A semiconductor device includes a substrate including an active region, a first bitline structure and a second bitline structure that extend side by side on the substrate, a storage node contact electrically connected to the active region between the first and second bitline structures, a lower landing pad between the first and second bitline structures and on the storage node contact, an upper landing pad in contact with the first bitline structure and electrically connected to the lower landing pad, and a capping insulating layer. A lower surface of the upper landing pad in contact with the first bitline structure and a lower surface of the capping insulating layer in contact with the lower landing pad each include a portion in which a horizontal separation distance is increased from the adjacent upper landing pad in a direction toward the substrate.

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Abstract: A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Abstract: There is disclosed a mobile terminal comprising a rear case made of metal and forming an exterior of a rear surface of the mobile terminal, the rear case comprising a first slit; a reinforcing member made of a non-conductive material, coupled to a first region of the rear having the first slit, wherein the reinforcing member protrude inward of the rear case and form an uneven portion; a first conductive pattern coupled to an inner surface of the rear case and forming a cut-off region in the first region, the first conductive pattern formed in a ring shape; and a second conductive pattern provided in a corresponding shape to uneven portion of the reinforcing member and electrically connecting the cut-off region of the first conductive pattern.

Abstract: The present invention provides a mobile terminal comprising: a terminal body having a display part on the front side thereof; and a back input part exposed to the back side of the body and having a first button part for receiving a push input of a first function, wherein the first button part comprises: an exposed part having a colored layer and exposed to the outside; a knob part formed on the back side thereof so as to fix the exposed part; and a body part covering the knob part and formed to be integrated with the exposed part.

Abstract: There is disclosed a mobile terminal comprising a rear case made of metal and forming an exterior of a rear surface of the mobile terminal, the rear case comprising a first slit; a reinforcing member made of a non-conductive material, coupled to a first region of the rear having the first slit, wherein the reinforcing member protrude inward of the rear case and form an uneven portion; a first conductive pattern coupled to an inner surface of the rear case and forming a cut-off region in the first region, the first conductive pattern formed in a ring shape; and a second conductive pattern provided in a corresponding shape to uneven portion of the reinforcing member and electrically connecting the cut-off region of the first conductive pattern.

Abstract: The present invention provides a mobile terminal comprising: a terminal body having a display part on the front side thereof; and a back input part exposed to the back side of the body and having a first button part for receiving a push input of a first function, wherein the first button part comprises: an exposed part having a colored layer and exposed to the outside; a knob part formed on the back side thereof so as to fix the exposed part; and a body part covering the knob part and formed to be integrated with the exposed part.

Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. The liquid crystal layer includes a liquid crystal composition including an alkenyl liquid crystal and an antioxidant component including at least one selected from an antioxidant and a derivative thereof. In an embodiment, the antioxidant component is present in an amount of greater than 0 ppm and equal to or less than about 10,000 ppm relative to the total weight of the liquid crystal composition.

Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. The liquid crystal layer includes a liquid crystal composition including an alkenyl liquid crystal and an antioxidant component including at least one selected from an antioxidant and a derivative thereof. In an embodiment, the antioxidant component is present in an amount of greater than 0 ppm and equal to or less than about 10,000 ppm relative to the total weight of the liquid crystal composition.

Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. The liquid crystal layer includes a liquid crystal composition including an alkenyl liquid crystal and an antioxidant component including at least one selected from an antioxidant and a derivative thereof. In an embodiment, the antioxidant component is present in an amount of greater than 0 ppm and equal to or less than about 10,000 ppm relative to the total weight of the liquid crystal composition.

Abstract: A liquid crystal display device includes a first substrate, a second substrate facing the first substrate, and a liquid crystal layer between the first and second substrates. The liquid crystal layer includes a liquid crystal composition including an alkenyl liquid crystal and an antioxidant component including at least one selected from an antioxidant and a derivative thereof. In an embodiment, the antioxidant component is present in an amount of greater than 0 ppm and equal to or less than about 10,000 ppm relative to the total weight of the liquid crystal composition.