Abstract: A solar cell includes a crystalline photovoltaic layer, a first impurity region having a first conductivity type and a second impurity region having a second conductivity type in the photovoltaic layer, a third impurity region having the first conductivity type in the first impurity region, a fourth impurity region having the second conductivity type in the second impurity region, a first barrier layer and a second barrier layer contacting the third impurity region and the fourth impurity region, respectively, and a first electrode and a second electrode contacting the first barrier layer and the second barrier layer, respectively. The first impurity region and the second impurity region are spaced apart from each other. The third impurity region and the fourth impurity region have an impurity concentration higher than the first impurity region the second impurity region, respectively.

Abstract: A solar cell includes a semiconductor layer including a charge carrier produced therein upon exposure to light, and a passivation layer on a side of the semiconductor layer, the passivation layer configured to apply a stress to the semiconductor layer and change a mobility of the charge carrier into a direction in the semiconductor layer.

Abstract: A solar cell may include a PN junction including a semiconductor substrate of a first conductivity and an emitter of a second conductivity, a passivation layer on an exposed surface of the semiconductor substrate, a first electrode connected to the semiconductor substrate, and a second electrode connected to the emitter. The passivation layer may be configured to apply stress to the exposed surface of the substrate such that a mobility of minority charge carriers in the semiconductor substrate is decreased in a first direction perpendicular to a boundary surface of the semiconductor substrate and the passivation layer.

Abstract: According to example embodiments, a solar cell includes a photoelectric member on a passivation member. The photoelectric member is configured to convert incident light into current. The passivation member includes protection material for protecting the-photoelectric member and wavelength conversion material configured to convert light that passes through the photoelectric member into different wavelength.

Abstract: According to example embodiments, a solar cell includes a first unit portion, a second unit portion, and an insulating layer. The first and second unit portions may have different bandgaps, and the insulating layer may be between the first unit portion and the second unit portion.

Abstract: According to example embodiments, a solar cell includes a plurality of unit portions. Each of the unit portions may have a stacked structure including a plurality of photoelectric members and at least one insulating layer disposed between the photoelectric members. The photoelectric members in different levels may have different energy bandgaps. The photoelectric members in a level may be connected to each other.

Abstract: Example embodiments of a solar cell including a semiconductor substrate, an N emitter layer formed on a light-absorbing surface of the semiconductor substrate, a p+ region formed on the light-absorbing surface of the semiconductor substrate, a first electrode electrically connected to the p+ region, a second electrode separately formed from the first electrode on the light-absorbing surface of the semiconductor substrate and electrically connected to the N emitter layer, and an auxiliary layer inducing an N+ back surface field (BSF) on the opposite surface to the light-absorbing surface of the semiconductor substrate, and a method of manufacturing the solar cell are provided.