Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Abstract: Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The material layer stack includes: a substrate having a first lattice constant; and a semiconductor layer grown on the substrate, the semiconductor layer having a second lattice constant that is different from the first lattice constant. Using the material layer stack, a light emitting element having a low leakage current, a low operation voltage, and an excellent luminous efficiency can be obtained.

Abstract: A method of manufacturing a light emitting diode (LED) includes forming a first material layer on a substrate, forming a second material layer on the first material layer, forming a photomask pattern on the second material layer, performing a first etching on the second material layer and a portion of the first material layer by using the photomask pattern as an etch mask, removing the photomask pattern, and forming a plurality of isolated structures by performing a second etching on the remaining portion of the first material layer until a top surface of the substrate is exposed.

Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract: A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1?x?yN (0?x?0.1, 0.01?y?0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract: A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InxGa(1-x)N, wherein 0?x<y, and at least one quantum well layer made of InyGa(1-y)N, wherein 0<y?1, disposed therein, and a second conductivity-type semiconductor layer, wherein the quantum barrier layer includes first and second graded layers disposed in order toward the first conductivity-type semiconductor layer. The first graded layer contains indium whose content increases in a direction towards the second conductivity-type semiconductor layer, and the second graded layer contains indium whose content decreased in a direction toward the second conductivity-type semiconductor layer.

Abstract: A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.

Abstract: A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InxGa(1-x)N, wherein 0?x<y, and at least one quantum well layer made of InyGa(1-y)N, wherein 0<y?1, disposed therein, and a second conductivity-type semiconductor layer, wherein the quantum barrier layer includes first and second graded layers disposed in order toward the first conductivity-type semiconductor layer. The first graded layer contains indium whose content increases in a direction towards the second conductivity-type semiconductor layer, and the second graded layer contains indium whose content decreased in a direction toward the second conductivity-type semiconductor layer.

Abstract: A semiconductor light emitting device includes first and second conductivity-type semiconductor layers formed of AlxGayIn1-x-yP (0?x?1, 0?y?1, 0?x+y?1) or AlzGa1-zAs (0?z?1) and an active layer interposed between the first and second conductivity-type semiconductor layers, wherein at least one of the first and second conductivity-type semiconductor layers includes a low refractive index surface layer formed of (AlvGa1-v)0.5In0.5P (0.7?v?1) or AlwIn1-wP (0?w?1) and having depressions and protrusions.

Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

Abstract: Provided is a semiconductor laser device including: a gain area where multi-wavelength lights are generated and gain are provided; a first reflection area where among the multi-wavelength lights, a first-wavelength light is reflected to the gain area in response to a first selection signal; a second reflection area where among the multi-wavelength lights, a second-wavelength light is reflected to the gain area; and a phase control area where a phase of the second-wavelength light is shifted in response to a phase control signal, the phase control area being disposed between the first reflection layer and the second reflection layer.

Abstract: Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.

Abstract: Provided is a wavelength selective switch (WSS), and more particularly, a wavelength selective switch for electrically switching a wavelength without physical displacement. The wavelength selective switch includes an optical demultiplexer for dividing an input optical signal into signals having wavelengths corresponding to respective channels, selecting either the optical signal of each channel obtained by dividing the input optical signal or an optical signal input via an add port, and outputting the selected optical signal; and an optical multiplexer including an optical deflecting unit for individually deflecting the optical signals of the respective channels received from the optical demultiplexer according to supplied current or applied voltage, wherein the optical signal of each channel deflected by the optical deflecting unit is output to a specific output port.

Abstract: The 3R regeneration system for a retiming, reshaping, and reamplifying an optical signal includes: first and second input ports in which a connected optical signal is input; an interferometer including first and second branches formed on a substrate, split at a common input node, combined at a common output node, semiconductor optical amplifiers in each of the first and second branches, the first branch being connected to the first input port, and the common input node being connected to the second input port; a self-pulsating laser diode monolithically integrated with the interferometer between one of the first input port and the first branch, and the second input port and the common input node on the substrate, receiving an optical signal, and outputting the optical signal regenerated by optical injection locking; and an output port connected to the common output node.