Abstract: The present invention relates to a catalyst for hydrogenation of an aromatic compound, which is capable of greatly reducing the inactivation of a catalyst by using a support including a magnesium-based spinel structure, and a preparation method therefor.

Abstract: Provided are a reverse-reflow core, a semiconductor package, and a method of fabricating a semiconductor package. The semiconductor package includes: a semiconductor apparatus including a bump pad; and a bump portion bonded to the bump pad. The bump portion includes: a core; an intermetallic compound layer formed on the core; and a solder layer coating the intermetallic compound layer, wherein the thickness of a portion of the solder layer decreases as the distance between the portion of the solder layer and the bump pad increases. The reverse-reflow core, the semiconductor package, and the method of fabricating a semiconductor package enable the fabrication of a semiconductor package having high bonding strength and a high degree of precision.

Abstract: A solder ball includes about 1.0 wt % to about 2.0 wt % silver (Ag), about 4.0 wt % to about 8.0 wt % indium (In), about 10.0 wt % to about 20.0 wt % bismuth (Bi), about 0.005 wt % to about 0.1 wt % deoxidizer, and the balance of tin (Sn). A melting point of the solder is about 170° C. to about 190° C.

Abstract: A solder ball for fluxless bonding includes a solder core, a first metal layer on a surface of the solder core, and a second metal layer on the first metal layer. The first metal layer includes at least one of nickel (Ni), silver (Ag), zinc (Zn), tin (Sn), chrome (Cr), antimony (Sb), platinum (Pt), palladium (Pd), aluminum (Al), or an alloy thereof. The second metal layer includes gold (Au). As the above solder ball for fluxless bonding is in use, a solder bump having high reliability may be formed via a relatively short, low cost, and simple process.

Abstract: A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.

Abstract: A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.

Abstract: Provided is a metal ball fabricating apparatus for fabricating a metal ball by melting a material. The metal ball fabricating apparatus includes: a fabricating unit configured to fabricate a metal ball; and a collecting unit configured to collect the metal ball. The fabricating unit includes: a chamber configured to receive and store a material; a heating unit configured to apply heat to melt the material in the chamber; an orifice disposed at a lower portion of the chamber to which a metal ball droplet drops; a piston disposed over the orifice to generate a metal ball droplet; and a purifying system configured to remove a foreign substance from the material.