Abstract: A positive electrode active material, a method of preparing the same, and a positive electrode and lithium secondary battery including the same are disclosed herein. In some embodiments, a positive electrode active material includes a lithium transition metal oxide which contains 60 mol % or more of nickel based on a total number of moles of transition metals excluding lithium in the lithium transition metal oxide, wherein the oxide is in a form of a secondary particle which is an aggregate of primary particles, wherein the lithium transition metal oxide satisfies Equation 1: 1 ? x y ? 20 Wherein x is a minimum area of a rectangle including all pores having an area greater than 0.002 ?m2 among closed pores distributed in the secondary particle, and y is a total sum of areas of the pores having an area greater than 0.002 ?m2 among the closed pores distributed in the secondary particle.

Abstract: A positive electrode active material precursor has a hydroxide represented by Formula 1, wherein the positive electrode active material precursor is a secondary particle, in which a plurality of primary particles are aggregated, and includes crystallines in which major axes of the primary particles are arranged in a direction from a center of the secondary particle toward a surface thereof and a (001) plane of the primary particle is arranged parallel to the major axis of the primary particle. A method of preparing the positive electrode active material precursor, and a positive electrode active material prepared by using the positive electrode active material precursor are also provided.

Abstract: A positive electrode active material precursor, a method of preparing the same, and a positive electrode active material, a positive electrode, and a lithium secondary battery prepared from the same. In some embodiments, a positive electrode active material precursor includes nickel, cobalt, and manganese, wherein the positive electrode active material precursor satisfies: Equation 1 (2.5?C(100)/C(001)?5.0) and Equation 2 (1.0?C(101)/C(001)?3.0), where C(001) is a crystalline size in a (001) plane, C(100) is a crystalline size in a (100) plane, and C(101) is a crystalline size in a (101) plane. The positive electrode active material precursor has particle growth of a (001) plane that is suppressed.

Abstract: A semiconductor package according to an exemplary embodiment of the present disclosure may comprise a semiconductor chip comprising a chip pad; a redistribution layer electrically connected to the chip pad of the semiconductor chip; an external connection terminal electrically connected to the redistribution layer; a sealing material covering the semiconductor chip and configured to fix the semiconductor chip and the redistribution layer; an adhesive film positioned on the upper surface of the sealing material; and a heat sink formed on the upper surface of the adhesive film and having a stepped portion at the periphery thereof.

Abstract: A positive electrode active material precursor, a method of preparing the same, a positive electrode for a secondary battery and a lithium secondary battery which include the same are disclosed herein. In some embodiments, a method of preparing a positive electrode active material precursor includes adding a transition metal aqueous solution, an ammonium ion-containing solution, and a basic aqueous solution to an initial reaction solution, and performing a co-precipitation reaction to prepare a positive electrode active material precursor having an average particle diameter (D50) of 3 ?m to 5 ?m, wherein the transition metal aqueous solution including a nickel raw material, a cobalt raw material, and a manganese raw material, and wherein the initial reaction solution includes a metal additive, wherein the metal additive includes at least one element selected from the group consisting of Group 5 elements and Group 6 elements.

Abstract: Disclosed are a chip package capable of improving the strength of a package and simplifying a manufacturing process and a manufacturing method therefor. This invention may improve the durability of the package by further forming a reinforcing layer on a chip by using an adhesive layer and molding the chip and the reinforcing layer so as to be integrated by using a molding layer. Also, the strength of the package may be improved by having a structure in which solder balls are formed between a base substrate and a re-wiring layer and integrated with the molding layer, and a wiring layer may be formed directly on the molding layer by using polyimide (PI) as the molding layer without using a separate insulating layer formed on the molding layer as in the conventional art.

Abstract: A method of preparing a positive electrode active material precursor includes: providing a transition metal-containing solution including nickel, cobalt, and manganese; and introducing the transition metal-containing solution into a reactor, adding a basic aqueous solution and an ammonium cation-containing complex-forming agent, and performing a co-precipitation reaction to prepare a transition metal hydroxide in the form of a secondary particle formed by agglomerating primary particles. The co-precipitation reaction is performed under conditions satisfying Expression 1 described in the specification, and a positive electrode active material precursor whose crystalline grain has a controlled aspect ratio. A positive electrode active material prepared using the positive electrode active material precursor, a positive electrode for a lithium secondary battery, which includes the positive electrode active material, and a lithium secondary battery are also provided.

Abstract: Embodiments provide a method of analyzing a shape of a wafer, including: measuring a cross-sectional shape of a plurality of wafers; obtaining a first angle formed by a first line connecting a first point to a second point having a maximum curvature in an edge region of the wafer and a front surface of the wafer; forming a thin film layer on a surface of each of the wafers; measuring a thickness profile of an edge region of the wafer on which each of the thin film layers is formed; and confirming a wafer having a smallest maximum thickness profile of the thin film layer among the plurality of wafers.

Abstract: Disclosed are a chip package capable of improving the strength of a package and simplifying a manufacturing process and a manufacturing method therefor. This invention may improve the durability of the package by further forming a reinforcing layer on a chip by using an adhesive layer and molding the chip and the reinforcing layer so as to be integrated by using a molding layer. Also, the strength of the package may be improved by having a structure in which solder balls are formed between a base substrate and a re-wiring layer and integrated with the molding layer, and a wiring layer may be formed directly on the molding layer by using polyimide (PI) as the molding layer without using a separate insulating layer formed on the molding layer as in the conventional art.

Abstract: A semiconductor package according to an exemplary embodiment of the present disclosure may comprise a semiconductor chip comprising a chip pad; a redistribution layer electrically connected to the chip pad of the semiconductor chip; an external connection terminal electrically connected to the redistribution layer; a sealing material covering the semiconductor chip and configured to fix the semiconductor chip and the redistribution layer; an adhesive film positioned on the upper surface of the sealing material; and a heat sink formed on the upper surface of the adhesive film and having a stepped portion at the periphery thereof.

Abstract: Embodiments provide a method of analyzing a shape of a wafer, including: measuring a cross-sectional shape of a plurality of wafers; obtaining a first angle formed by a first line connecting a first point to a second point having a maximum curvature in an edge region of the wafer and a front surface of the wafer; forming a thin film layer on a surface of each of the wafers; measuring a thickness profile of an edge region of the wafer on which each of the thin film layers is formed; and confirming a wafer having a smallest maximum thickness profile of the thin film layer among the plurality of wafers.

Abstract: The present disclosure relates to a method of manufacturing cathode active material for lithium secondary batteries and a lithium secondary battery manufactured using the same. Methods of manufacturing cathode active material for lithium secondary batteries according to embodiments of the inventive concept can fabricate cathode active material with improved stability and capacity by adjusting temperature of thermal treatment in accordance with concentration of transition metal which shows concentration gradient.

Abstract: There is provided a bump structure for a semiconductor device, comprising a metal post formed on and electrically connected to an electrode pad on a substrate, a solder post formed on the top surface of the metal post, said solder post having the same horizontal width as the metal post and the top surface of the solder post being substantially rounded, and an intermetallic compound layer disposed at the interface between the metal post and the solder post. An oxide layer formed on the solder post prevents solder post under reflow from being changed into a spherical shape. An intermetallic compound layer may be formed by an aging process at the interface between the metal post and the solder post. The bump structure can realize fine pitch semiconductor package without a short between neighboring bumps.

Abstract: There is provided a bump structure for a semiconductor device, comprising a metal post formed on and electrically connected to an electrode pad on a substrate, a solder post formed on the top surface of the metal post, said solder post having the same horizontal width as the metal post and the top surface of the solder post being substantially rounded, and an intermetallic compound layer disposed at the interface between the metal post and the solder post. An oxide layer formed on the solder post prevents solder post under reflow from being changed into a spherical shape. An intermetallic compound layer may be formed by an aging process at the interface between the metal post and the solder post. The bump structure can realize fine pitch semiconductor package without a short between neighboring bumps.