Abstract: A composition for regulating splicing of Polybromo 1 (PBRM1) gene includes a splicing-switch oligonucleotide as an effective component. The splicing-switch oligonucleotide exhibits the effect of regulating the splicing of PBRM1 (Polybromo 1) gene and also, when exon 27 is skipped in cancer cells through the splicing regulation, enhancing cancer cell death through activation of NK92 cells.

Abstract: The present invention relates to a method for fabrication of a three-dimensional lung organoid comprising human stem cell-derived alveolar macrophages. Specifically, a lung organoid is fabricated by co-culturing cells not expressing the definitive endoderm marker CRCX4 according to a fabrication method of the present disclosure. The lung organoid comprises type 1 and type 2 alveolar epithelial cells as well as alveolar macrophages and realizes infectious or inflammatory responses unlike conventional lung organoids that contain no immune cells and as such, can be advantageously used in studying mechanisms of related lung diseases, excavating biomarkers, developing therapeutic agents, and so on.

Abstract: The peptide of the present invention performs a function, which is the same as or similar to that of natural interleukin (IL)-3, and has superior skin permeability due to the small size thereof. In addition, the peptide of the present invention suppresses the activation of NF-?B and nuclear transition by inhibiting the receptor activator of nuclear factor kappa-B ligand (RANKL)-RANK signaling pathway, and suppresses the expression of a RANKL or an inflammatory cytokine-induced tartrate-resistant acid phosphatase (TRAP), cathepsin K, or TNF receptor type 1 or type 2, thereby inhibiting osteoclast differentiation depending on the treatment concentration. Moreover, the peptide of the present invention can contribute to osteoblast differentiation by promoting the expression of osteoblast differentiation markers such as osteocalcin (OCN), osteoprotegerin (OPG), bone sialoprotein (BSP), or osteopontin (OPN).

Abstract: The present invention relates to a method for fabrication of a three-dimensional lung organoid comprising human stem cell-derived alveolar macrophages. Specifically, a lung organoid is fabricated by co-culturing cells not expressing the definitive endoderm marker CRCX4 according to a fabrication method of the present disclosure. The lung organoid comprises type 1 and type 2 alveolar epithelial cells as well as alveolar macrophages and realizes infectious or inflammatory responses unlike conventional lung organoids that contain no immune cells and as such, can be advantageously used in studying mechanisms of related lung diseases, excavating biomarkers, developing therapeutic agents, and so on.

Abstract: Disclosed is a valve block of an electronic control brake system.

Abstract: The peptide of the present invention performs a function, which is the same as or similar to that of natural interleukin (IL)-3, and has superior skin permeability due to the small size thereof. In addition, the peptide of the present invention suppresses the activation of NF-?B and nuclear transition by inhibiting the receptor activator of nuclear factor kappa-B ligand (RANKL)-RANK signaling pathway, and suppresses the expression of a RANKL or an inflammatory cytokine-induced tartrate-resistant acid phosphatase (TRAP), cathepsin K, or TNF receptor type 1 or type 2, thereby inhibiting osteoclast differentiation depending on the treatment concentration. Moreover, the peptide of the present invention can contribute to osteoblast differentiation by promoting the expression of osteoblast differentiation markers such as osteocalcin (OCN), osteoprotegerin (OPG), bone sialoprotein (BSP), or osteopontin (OPN).

Abstract: The peptide of the present invention performs a function, which is the same as or similar to that of natural interleukin (IL)-3, and has superior skin permeability due to the small size thereof. In addition, the peptide of the present invention suppresses the activation of NF-?B and nuclear transition by inhibiting the receptor activator of nuclear factor kappa-B ligand (RANKL)-RANK signaling pathway, and suppresses the expression of a RANKL or an inflammatory cytokine-induced tartrate-resistant acid phosphatase (TRAP), cathepsin K, or TNF receptor type 1 or type 2, thereby inhibiting osteoclast differentiation depending on the treatment concentration. Moreover, the peptide of the present invention can contribute to osteoblast differentiation by promoting the expression of osteoblast differentiation markers such as osteocalcin (OCN), osteoprotegerin (OPG), bone sialoprotein (BSP), or osteopontin (OPN).

Abstract: Disclosed is a valve block of an electronic control brake system.

Abstract: In certain embodiments, the present invention provides methods to prepare insulin secreting cells from a skin sample from a mammal.

Abstract: Disclosed herein is a high pressure accumulator of a brake system capable of attenuating pressure pulsation of oil discharged from a pump. The present invention is directed to a high pressure accumulator a brake system in which a damping chamber disposed to attenuate pressure pulsation is optionally partitioned into a plurality of layers to change characteristics of a flow of brake oil so that pressure pulsation can be efficiently reduced. Therefore, it is an aspect of the present invention to provide a high pressure accumulator of a brake system in which an orifice part is integrally formed so that a processing time for installing an orifice separately and an assembling time therefor can be reduced.

Abstract: A hydraulic unit of an electronic control brake system including a modulator block; a pair of master cylinder connection portions; a first valve row having a plurality of first valve accommodation bores; a second valve row having a plurality of second valve accommodation bores; a pair of low-pressure accumulator bores arranged in a bottom side of the modulator block in the lateral direction; pump accommodation bores; a pair of shuttle valve ESV accommodation bores arranged between the first valve row and the second valve row; a pair of driving force control valve TC accommodation bores arranged between wheel cylinder connection portions formed in the modulator block and the first valve row; and a pair of high-pressure accumulator bores arranged in the modulator block in a longitudinal direction, wherein the pair of high-pressure accumulator bores are formed to have an arrangement parallel to the motor accommodation bores.

Abstract: The present invention provides a nonvolatile memory element, in a nonvolatile memory element having a variable resistance layer possessing a stacked structure, in which the variable resistance layer has a high resistance change ratio, and a method of manufacturing the same. The nonvolatile memory element according to one embodiment of the present invention includes a first electrode, a second electrode, and a variable resistance layer which is interposed between the first electrode and second electrode and in which the resistance value changes into at least two different resistance states. The variable resistance layer possesses a stacked structure having a first metal oxide layer containing Hf and O, and a second metal oxide layer that is provided between the first metal oxide layer and at least one of the first electrode and the second electrode and contains Al and O.

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract: The present invention provides a nonvolatile memory element, in a nonvolatile memory element having a variable resistance layer possessing a stacked structure, in which the variable resistance layer has a high resistance change ratio, and a method of manufacturing the same. The nonvolatile memory element according to one embodiment of the present invention includes a first electrode, a second electrode, and a variable resistance layer which is interposed between the first electrode and second electrode and in which the resistance value changes into at least two different resistance states. The variable resistance layer possesses a stacked structure having a first metal oxide layer containing Hf and O, and a second metal oxide layer that is provided between the first metal oxide layer and at least one of the first electrode and the second electrode and contains Al and O.

Abstract: Disclosed herein is a high pressure accumulator of a brake system capable of attenuating pressure pulsation of oil discharged from a pump. The present invention is directed to a high pressure accumulator a brake system in which a damping chamber disposed to attenuate pressure pulsation is optionally partitioned into a plurality of layers to change characteristics of a flow of brake oil so that pressure pulsation can be efficiently reduced. Therefore, it is an aspect of the present invention to provide a high pressure accumulator of a brake system in which an orifice part is integrally formed so that a processing time for installing an orifice separately and an assembling time therefor can be reduced.

Abstract: A method of manufacturing a semiconductor device capable of thinning a semiconductor chip can be performed while preventing the semiconductor chip from being damaged. A method of manufacturing a semiconductor device includes: preparing a semiconductor substrate including a plurality of semiconductor chips, attaching the semiconductor substrate to a support substrate with an adhesive support film, removing an edge region of the semiconductor substrate together with a portion of the adhesive support film between the edge region of the semiconductor substrate and the support substrate and, thereafter, polishing the semiconductor substrate to thin the semiconductor substrate.

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract: In a semiconductor device and related method of fabricating the same, a hard mask layer is formed over a substrate, portions of the hard mask layer and the substrate are etched to form trenches having protruding portions at sidewalls, and an insulation layer buried in the trenches is formed to form device isolation regions having protruding portions at sidewalls, wherein the device isolation regions decrease a portion of a width of active regions.

Abstract: A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.