Abstract: The present disclosure provides a novel promoter variant in which some nucleotides are inserted, deleted, or substituted in a twin arginine translocase A (tatA) gene promoter of Escherichia coli. According to the present disclosure, the novel promoter variant can constitutively high-express a target protein, particularly an enzyme, in Escherichia coli. Therefore, by using a recombinant strain transformed with an expression vector including the novel promoter variant according to the present disclosure, it is possible to economically mass-produce a target protein, particularly an enzyme. For example, by using a recombinant strain transformed with an expression vector including the novel promoter variant according to the present disclosure, it is possible to economically mass-produce allulose epimerase or economically mass-produce allulose from fructose.

Abstract: An exemplary embodiment of the present disclosure provides an allulose epimerase expression cassette including a polynucleotide encoding allulose epimerase and a promoter which is operably linked thereto and regulates the expression of the allulose epimerase in a Corynebacterium genus strain. The promoter consists of a base sequence represented by SEQ ID NO: 1, a base sequence represented by SEQ ID NO: 9, a base sequence represented by SEQ ID NO: 10, or a base sequence represented by SEQ ID NO: 11. The allulose epimerase expression cassette may be hardly operated under a normal environment of culturing a recombinant Corynebacterium genus strain and does not induce growth inhibition of the recombinant Corynebacterium genus strain. The recombinant Corynebacterium genus strain transformed with the allulose epimerase expression cassette may grow and proliferate normally until a logarithmic phase and stably and highly express allulose epimerase after the logarithmic phase.

Abstract: A semiconductor device may include: a peripheral circuit located on a substrate; a stack structure located over the peripheral circuit in a non-core region and including insulating layers and dummy layers that are alternately and repeatedly stacked; a channel pattern located on the stack structure; a transistor located on the channel pattern; a contact structure extending through the stack structure and electrically connecting the peripheral circuit to the channel pattern; a gate structure located over the peripheral circuit in a core region and including insulating layers and conductive layers that are alternately and repeatedly stacked; a first source pattern located on the gate structure; and a channel structure extending through the gate structure to contact the first source pattern.

Abstract: One embodiment of the present disclosure provides a promoter consisting of a base sequence represented by SEQ ID NO: 6 or a base sequence represented by SEQ ID NO: 27 and regulating the expression of allulose epimerase in a Corynebacterium sp. strain. According to the present disclosure, the novel promoter may constitutively and highly express a target protein, particularly an enzyme, in a Corynebacterium sp. strain. For example, by using a recombinant Corynebacterium sp. strain transformed with an expression vector including the novel promoter according to the present disclosure, it is possible to economically mass-produce allulose epimerase or economically mass-produce allulose from fructose.

Abstract: A semiconductor device may include a first source pass transistor controlling a connection between a global source line and a first local source line, a second source pass transistor controlling a connection between the global source line and a second local source line, a first memory block operating using a first source voltage supplied through the first local source line, and a second memory block operating using a second source voltage supplied through the second local source line.

Abstract: Provided herein is a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a channel layer, and a source select line surrounding at least a part of the channel layer. A p-type impurity is locally doped in the part of the channel layer or a gate insulating layer includes a first member interposed between the channel layer and the source select line and aligned with a data storage layer.

Abstract: The present disclosure provides a novel promoter variant in which some nucleotides are inserted, deleted, or substituted in a twin arginine translocase A (tatA) gene promoter of Escherichia coli. According to the present disclosure, the novel promoter variant can constitutively high-express a target protein, particularly an enzyme, in Escherichia coli. Therefore, by using a recombinant strain transformed with an expression vector including the novel promoter variant according to the present disclosure, it is possible to economically mass-produce a target protein, particularly an enzyme. For example, by using a recombinant strain transformed with an expression vector including the novel promoter variant according to the present disclosure, it is possible to economically mass-produce allulose epimerase or economically mass-produce allulose from fructose.

Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a gate stack including an interlayer insulating layers and conductive patterns alternately stacked in a vertical direction on a substrate, a channel structure passing through the gate stack and having an upper end protruding above the gate stack, a memory layer surrounding a sidewall of the channel structure, and a source layer formed on the gate stack. The channel structure includes a core insulating layer extending in a central region of the channel structure in the vertical direction, and a channel layer surrounding a sidewall of the core insulating layer, the channel layer formed to be lower in the vertical direction than the core insulating layer and the memory layer.

Abstract: A user terminal apparatus is provided. The user terminal apparatus for performing a remote control function for an electronic apparatus includes a communication unit configured to communicate with an electronic apparatus for providing a text input user interface (UI), an input unit configured to receive a user command for input of a specific text on the text input UI, a fingerprint scanner provided in the input unit and configured to recognize a user fingerprint, and a controller configured to recognize a user fingerprint according to the user command and to transmit information corresponding to the recognized user fingerprint to the electronic apparatus in response to the electronic apparatus entering a preset text input mode.

Abstract: There are provided a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a gate stack comprising a plurality of first interlayer insulating patterns and a plurality of conductive patterns alternately stacked, a dummy stack comprising a plurality of second interlayer insulating patterns and a plurality of sacrificial insulating layers, a plurality of step-shaped grooves defined at different depths in the gate stack, a plurality of openings passing through the dummy stack and spaced apart from each other, a first gap-fill insulating pattern filling the plurality of step-shaped grooves, a second gap-fill insulating pattern filling the plurality of openings, a plurality of conductive gate contacts passing through the first gap-fill insulating pattern and connected to the plurality of conductive patterns, and a plurality of conductive peripheral circuit contacts passing through the second gap-fill insulating pattern.

Abstract: The present invention provides a novel promoter variant in which some nucleotides of the glyceraldehyde-3-phosphate dehydrogenase (gapA) gene promoter of Escherichia coli are deleted. The novel promoter variant according to the present invention can constitutively express a target protein at a high level, particularly an enzyme, in Escherichia coli. Therefore, a target protein, particularly an enzyme, can be economically mass-produced using a recombinant strain transformed with an expression vector containing the novel promoter variant according to the present invention. For example, allulose epimerase can be economically mass-produced or allulose can be economically mass-produced from fructose using a recombinant strain transformed with an expression vector containing the novel promoter variant according to the present invention.

Abstract: A semiconductor memory device, and a method of manufacturing the same, includes a gate stack including an interlayer insulating layers and conductive patterns alternately stacked in a vertical direction on a substrate, a channel structure passing through the gate stack and having an upper end protruding above the gate stack, a memory layer surrounding a sidewall of the channel structure, and a source layer formed on the gate stack. The channel structure includes a core insulating layer extending in a central region of the channel structure in the vertical direction, and a channel layer surrounding a sidewall of the core insulating layer, the channel layer formed to be lower in the vertical direction than the core insulating layer and the memory layer.

Abstract: A user terminal apparatus is provided. The user terminal apparatus for performing a remote control function for an electronic apparatus includes a communication unit configured to communicate with an electronic apparatus for providing a text input user interface (UI), an input unit configured to receive a user command for input of a specific text on the text input UI, a fingerprint scanner provided in the input unit and configured to recognize a user fingerprint, and a controller configured to recognize a user fingerprint according to the user command and to transmit information corresponding to the recognized user fingerprint to the electronic apparatus in response to the electronic apparatus entering a preset text input mode.

Abstract: There are provided a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a gate stack comprising a plurality of first interlayer insulating patterns and a plurality of conductive patterns alternately stacked, a dummy stack comprising a plurality of second interlayer insulating patterns and a plurality of sacrificial insulating layers, a plurality of step-shaped grooves defined at different depths in the gate stack, a plurality of openings passing through the dummy stack and spaced apart from each other, a first gap-fill insulating pattern filling the plurality of step-shaped grooves, a second gap-fill insulating pattern filling the plurality of openings, a plurality of conductive gate contacts passing through the first gap-fill insulating pattern and connected to the plurality of conductive patterns, and a plurality of conductive peripheral circuit contacts passing through the second gap-fill insulating pattern.

Abstract: There are provided a semiconductor memory device and a manufacturing method of the same. The semiconductor memory device includes: a stack structure including conductive patterns and interlayer insulating layers, which are alternately stacked in a first direction; a channel layer penetrating the stack structure; a first semiconductor layer disposed on the stack structure, the first semiconductor layer including a first impurity of a first conductivity type; a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer including a well region with a second impurity of a second conductivity type, wherein the second conductivity type is different from the first conductivity type; and a memory layer between the channel layer and the stack structure.

Abstract: Provided herein is a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a first gate stacked body including a plurality of interlayer insulating layers and a plurality of conductive patterns that are alternately stacked in a vertical direction, a second gate stacked body including a source select line and an insulating pattern that are sequentially formed on the first gate stacked body, and a channel structure extending into the first gate stacked body and the second gate stacked body in a vertical direction, and including a first end upwardly protruding higher than the second gate stacked body, wherein the source select line includes a plurality of conductive layers that are sequentially stacked.

Abstract: A semiconductor memory device and a method of manufacturing the semiconductor memory device are provided. The semiconductor memory device includes a channel layer with a first portion and a second portion, the first portion and the second portion extending in a longitudinal direction, a gate stacked structure surrounding the first portion of the channel layer, a first semiconductor layer of a first conductivity type that contacts the second portion of the channel layer, and a second semiconductor layer of a second conductivity type.

Abstract: A semiconductor device includes a gate structure including drain select lines and word lines, source patterns, and source select lines located between the gate structure and the source patterns. The semiconductor device also includes a first isolation structure extending between the source patterns and between the source select lines, a second isolation structure extending between the drain select lines, and channel structures extending into the source patterns through the gate structure and the source select lines.

Abstract: The present invention provides a novel allulose epimerase variant and various uses thereof, in which glycine (Gly), an amino acid residue at position 216 of the amino acid sequence of wild-type D-allulose 3-epimerase derived from Flavonifractor plautii, is substituted with serine (Ser). The novel allulose epimerase variant according to the present invention has a higher conversion activity of fructose to allulose compared to the wild-type D-allulose 3-epimerase derived from Flavonifractor plautii, and in particular, it has excellent thermal stability under high temperature conditions of 60° C. or higher, so that the enzyme conversion reaction is performed at the industrial level for mass production of allulose to prevent contamination, to shorten production time, and to reduce production cost.

Abstract: A semiconductor device includes a stacked body including stacked insulating layers and stacked conductive layers; a cell plug; a connection contact structure; and a source layer coupled to the cell plug. The cell plug includes upper and lower portions, the connection contact structure includes a first connection contact disposed at substantially the same level as the lower portion of the cell plug, and a second connection contact disposed at substantially the same level as the upper portion thereof, a level at which the first and second connection contacts contact each other is substantially the same as a level at which the upper and lower portions of the cell plug contact each other, and a level of an uppermost portion of the second connection contact is higher than a level of a bottom surface of the source layer, and is lower than a level of a top surface thereof.