Abstract: The present invention relates to a bi-specific antibody that specifically binds to alpha-synuclein and IGF1R, and an use of the bi-specific antibody for the prevention, treatment and/or diagnosis of synucleinopathies associated with alpha-synuclein or alpha-synuclein aggregates, and can allow the alpha-synuclein antibody or an antigen-binding fragment thereof to penetrate the blood brain barrier to exert its action in the brain, and extend the half-life to maintain the efficacy for a long time.

Abstract: Disclosed is a method for preventing or treating atopic dermatitis using TRPV1 receptor antagonist. More specifically, it may be possible to prevent and/or treat the atopic dermatitis without any side effects such as an increase in body temperature, epidermal atrophy, and the like by percutaneously administrating a composition for external use on the skin containing the TRPV1 receptor antagonist.

Abstract: An integrated circuit semiconductor device includes a first region including first active fins extending in a first direction, and first transistors including first gate electrodes extending in a second direction, a second region in contact with the first region in the second direction, wherein the second region includes second active fins extending in the first direction, and second transistors including second gate electrodes extending in the second direction. The integrated circuit semiconductor device includes metal dams at a boundary of the first region and the second region to separate the first gate electrodes and the second gate electrodes in the second direction, wherein the metal dams, the first gate electrodes, and the second gate electrodes are electrically connected in the second direction.

Abstract: A semiconductor device is provided. The semiconductor device includes: first, second and third active patterns on a logic cell region of a substrate and are spaced apart from each other in a first direction; first and second gate electrodes, the first gate electrode crossing the first active pattern and the second gate electrode crossing the second active pattern; a first separation pattern provided between the first and second active patterns; a second separation pattern provided between the second and third active patterns; a first gate insulating layer interposed between the first gate electrode and the first active pattern; and a first gate cutting pattern interposed between the first and second gate electrodes, and in contact with a top surface of the first separation pattern.

Abstract: A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.

Abstract: Disclosed is a method for preventing or treating sleep disorders using TRPV1 receptor antagonist, (R)—N-[1-(3,5-difluoro-4-methanesulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide. The method of the present invention can effectively and safely prevent or treat sleep disorders accompanying pruritus caused by atopic dermatitis.

Abstract: One aspect of the present disclosure relates to a sol-gel composition enabling reversible sol-gel transition and, more specifically, to a sol-gel composition of which the viscosity changes by external physical force so that reversible sol-gel transition is performed.

Abstract: One aspect of the present disclosure relates to a pharmaceutical composition, containing (R)-N-[1-(3,5-difluoro-4-methanesulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first ingredient and containing a vinylpyrrolidone-based polymer as a second ingredient. The composition of one aspect of the present disclosure has a formulation characteristic in which the crystal formation of a compound represented by chemical formula 1 is delayed for a long time.

Abstract: Disclosed is a method for preventing or treating atopic dermatitis using TRPV1 receptor antagonist. More specifically, it may be possible to prevent and/or treat the atopic dermatitis without any side effects such as an increase in body temperature, epidermal atrophy, and the like by percutaneously administrating a composition for external use on the skin containing the TRPV1 receptor antagonist.

Abstract: Disclosed is a method for preventing or treating sleep disorders using TRPV1 receptor antagonist, (R)—N-[1-(3,5-difluoro-4-methanesulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide. The method of the present invention can effectively and safely prevent or treat sleep disorders accompanying pruritus caused by atopic dermatitis.

Abstract: Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.

Abstract: Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.

Abstract: Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.

Abstract: Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.