Abstract: Provided is a display device including a display panel, an optical sensor, a timing controller, a scan driver, a data driver, and an image controller. The timing controller controls an image refresh rate of the display panel based on a refresh rate control signal. Thus, the display device provides improved visibility.

Abstract: Provided is a novel JAK-specific inhibitor compound and a method for preparing the same. The compound of the provided can exhibit therapeutic effects on a variety of diseases, for example, inflammatory diseases, autoimmune diseases, myeloproliferative diseases, and human cancers due to its ability to regulate signal transduction at the level of JAK kinases. In particular, due to its high selectivity for JAK1, the compound of the provided can exhibit better therapeutic effects on inflammatory diseases and autoimmune diseases at a low dose and with fewer side effects and can be expected to be effective in preventing and treating liver fibrosis.

Abstract: A method for displaying a message in a messenger service by a user terminal is proposed. The method may include receiving the message from a server. The method may also include receiving a mask command for the message from the server when text information extracted from the message satisfies a preset condition. The method may further include displaying a mask message corresponding to the message in a chat room of the messenger service based on the mask command.

Abstract: A multilayer electronic component includes a body including a plurality of dielectric layers, side margin portions disposed on the body, and external electrodes disposed on the body. The reliability of the multilayer electronic component is improved by controlling the contents of Si for each position of the dielectric layer and the side margin portion.

Abstract: The present invention relates to a pidolate salt and malate salt of a compound represented by a formula 1 with an excellent liquid-phase stability, solid-phase stability, water solubility, precipitation stability and hygroscopicity all together as a compound for preventing and treating diseases mediated by an acid pump antagonistic activity, as well as a method for preparing the same.

Abstract: The present disclosure relates to a pharmaceutical composition for suppressing cancer metastasis containing, as an active ingredient, an activator compound of the cancer metastasis inhibitor Nm23, a stereoisomer thereof, or a pharmaceutically acceptable salt thereof. The compound according to the present disclosure may suppress the metastasis of cancer cells by promoting the activity of Nm23 associated with cancer metastasis, and thus may be useful as a pharmaceutical composition for suppressing cancer metastasis.

Abstract: The present disclosure relates to a pharmaceutical composition for suppressing cancer metastasis containing, as an active ingredient, an activator compound of the cancer metastasis inhibitor Nm23, a stereoisomer thereof, or a pharmaceutically acceptable salt thereof. The compound according to the present disclosure may suppress the metastasis of cancer cells by promoting the activity of Nm23 associated with cancer metastasis, and thus may be useful as a pharmaceutical composition for suppressing cancer metastasis.

Abstract: A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer.

Abstract: A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type. The source/drain regions have a second conductivity type. A concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region. The semiconductor device may be used in a sense amplifier of a memory device.

Abstract: A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type. The source/drain regions have a second conductivity type. A concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region. The semiconductor device may be used in a sense amplifier of a memory device.

Abstract: A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer.

Abstract: An FRAM device includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connected between the word lines and bit line bars. The first plate lines can be connected to upper electrodes of the first ferroelectric capacitors. The second plate lines can be connected to upper electrodes of the second ferroelectric capacitors. Thus, the first ferroelectric capacitors connected to the bit lines and the second ferroelectric capacitors connected to the bit line bars can be connected to the different plate lines, so that data can be output from any one of the bit line and the bit line bar. As a result, a layout of a core region can be simplified.

Abstract: An FRAM device can includes first ferroelectric capacitors, second ferroelectric capacitors, first plate lines and second plate lines. The first ferroelectric capacitors can be connected between word lines and bit lines. The second ferroelectric capacitors can be connected between the word lines and bit line bars. The first plate lines can be connected to upper electrodes of the first ferroelectric capacitors. The second plate lines can be connected to upper electrodes of the second ferroelectric capacitors. Thus, the first ferroelectric capacitors connected to the bit lines and the second ferroelectric capacitors connected to the bit line bars can be connected to the different plate lines, so that data can be output from any one of the bit line and the bit line bar. As a result, a layout of a core region can be simplified.