Patents by Inventor Euy Hyeon Baek

Euy Hyeon Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6232590
    Abstract: Solid state image sensor and method for fabricating the same, which can provide the same focal distances of lights incident to a photodiode through a microlens for improving a sensitivity of a CCD, the solid state image sensor including photodiode regions for generating video charges from incident lights, and charge coupled devices each formed between the photodiodes for transferring the video charges in one direction, wherein impurity ions are implanted in a portion of each of microlenses formed over, and one to one matched to the photodiode regions for varying a refractive index.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: May 15, 2001
    Assignee: LG Semicon Co., Ltd.
    Inventor: Euy Hyeon Baek
  • Patent number: 6127668
    Abstract: A solid state image pickup device including implanting impurity ions into a planarizing layer and/or a microlens layer thereon for changing a refractive index thereof, and method for fabricating such a device. The planarizing layer and the microlens layer are formed over components of the solid state image pickup device including a plurality of photoelectric conversion regions and charge coupled device (CCD) regions, each charge coupled device transferring an image charge generated in the photoelectric conversion regions in one direction.
    Type: Grant
    Filed: December 31, 1997
    Date of Patent: October 3, 2000
    Assignee: LG Semicon Co., Ltd.
    Inventor: Euy Hyeon Baek
  • Patent number: 5835274
    Abstract: A mask for patterning a microlens includes a glass substrate, a main light-blocking region formed on a predetermined area of the glass substrate, and auxiliary light-blocking regions formed around the main light-blocking region or on a part of the main light-blocking region such that as the intervals between the main and auxiliary light-blocking regions become longer, the intensity of light transmitted thereto becomes greater.
    Type: Grant
    Filed: January 16, 1997
    Date of Patent: November 10, 1998
    Assignee: LG Semicon Co., Ltd.
    Inventor: Euy Hyeon Baek