Abstract: A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

Abstract: Provided is a substrate processing equipment having a blocking part capable of partially blocking heat transfer to the central region of a reaction space of a chamber to uniformly heat the reaction space. The equipment includes: a chamber; a substrate holding part disposed in the reaction space to hold and rotate a substrate; a first heating part disposed at a lower central region of the chamber to heat the central region of the reaction space; a second heating part disposed at a lower peripheral region of the chamber to heat a peripheral region of the reaction space; and a blocking part. The blocking part is disposed between the first and second heating parts, and a top portion thereof is extended toward the above of the second heating part to block transfer of heat generated by the second heating part to the central region of the reaction space.

Abstract: A substrate processing apparatus, which is designed to prevent the wobbling of a rotational shaft rotating, is provided. The substrate includes a rotation shaft and a connecting member. A unit is disposed between the rotational shaft and the connecting member to make the rotational shaft and the connecting member close-contact each other or a unit is disposed under the rotational shaft to prevent the wobbling of the rotational shaft.

Abstract: A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.