Patents by Inventor Eva E. Tois
Eva E. Tois has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11145506Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: GrantFiled: September 30, 2019Date of Patent: October 12, 2021Assignee: ASM IP HOLDING B.V.Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, VamsI Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie
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Patent number: 11094535Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.Type: GrantFiled: February 9, 2018Date of Patent: August 17, 2021Assignee: ASM IP HOLDING B.V.Inventors: Eva E. Tois, Suvi P. Haukka, Raija H. Matero, Elina Färm, Delphine Longrie, Hidemi Suemori, Jan Willem Maes, Marko Tuominen, Shaoren Deng, Ivo Johannes Raaijmakers, Andrea Illiberi
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Publication number: 20210175092Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.Type: ApplicationFiled: December 22, 2020Publication date: June 10, 2021Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
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Publication number: 20210151324Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.Type: ApplicationFiled: October 23, 2020Publication date: May 20, 2021Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
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Publication number: 20210115559Abstract: Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.Type: ApplicationFiled: December 28, 2020Publication date: April 22, 2021Inventors: Varun Sharma, Eva E. Tois
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Publication number: 20210118669Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.Type: ApplicationFiled: December 7, 2020Publication date: April 22, 2021Inventors: Eva E. Tois, Viljami J. Pore
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Patent number: 10923361Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.Type: GrantFiled: October 21, 2019Date of Patent: February 16, 2021Assignee: ASM IP Holding B.V.Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
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Patent number: 10854460Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.Type: GrantFiled: July 8, 2019Date of Patent: December 1, 2020Assignee: ASM IP Holding B.V.Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
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Publication number: 20200181769Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.Type: ApplicationFiled: December 10, 2019Publication date: June 11, 2020Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
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Publication number: 20200105515Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: ApplicationFiled: September 30, 2019Publication date: April 2, 2020Applicant: ASM IP Holding B.V.Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie
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Publication number: 20200051829Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.Type: ApplicationFiled: October 21, 2019Publication date: February 13, 2020Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
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Patent number: 10553440Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.Type: GrantFiled: June 20, 2016Date of Patent: February 4, 2020Assignee: ASM International N.V.Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
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Patent number: 10513772Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.Type: GrantFiled: October 14, 2010Date of Patent: December 24, 2019Assignee: ASM International N.V.Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
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Publication number: 20190333761Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.Type: ApplicationFiled: July 8, 2019Publication date: October 31, 2019Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
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Patent number: 10453701Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.Type: GrantFiled: April 12, 2017Date of Patent: October 22, 2019Assignee: ASM IP Holding B.V.Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
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Patent number: 10373820Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.Type: GrantFiled: June 1, 2016Date of Patent: August 6, 2019Assignee: ASM IP Holding B.V.Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
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Publication number: 20190081149Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.Type: ApplicationFiled: July 20, 2018Publication date: March 14, 2019Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
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Publication number: 20180233350Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.Type: ApplicationFiled: February 9, 2018Publication date: August 16, 2018Inventors: Eva E. Tois, Suvi P. Haukka, Raija H. Matero, Elina Färm, Delphine Longrie, Hidemi Suemori, Jan Willem Maes, Marko Tuominen, Shaoren Deng, Ivo Johannes Raaijmakers, Andrea Illiberi
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Patent number: 10043880Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.Type: GrantFiled: April 20, 2017Date of Patent: August 7, 2018Assignee: ASM INTERNATIONAL N.V.Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
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Publication number: 20180151345Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.Type: ApplicationFiled: November 29, 2016Publication date: May 31, 2018Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen