Patents by Inventor Eva-Maria Hess

Eva-Maria Hess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for processing a workpiece by forming a pourous metal layer
    Patent number: 9362127
    Abstract: A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.
    Type: Grant
    Filed: July 23, 2013
    Date of Patent: June 7, 2016
    Assignee: Infineon Technologies AG
    Inventors: Michael Krenzer, Thomas Kunstmann, Eva-Maria Hess, Manfred Frank
  • Semiconductor device including a dielectric material
    Patent number: 9355881
    Abstract: A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: May 31, 2016
    Assignee: Infineon Technologies AG
    Inventors: Bernhard Goller, Eva-Maria Hess, Edward Fuergut, Christian Schweiger
  • SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC MATERIAL
    Publication number: 20150235890
    Abstract: A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.
    Type: Application
    Filed: February 18, 2014
    Publication date: August 20, 2015
    Applicant: Infineon Technologies AG
    Inventors: Bernhard Goller, Eva-Maria Hess, Edward Fuergut, Christian Schweiger
  • METHOD FOR PROCESSING A WORKPIECE
    Publication number: 20150031203
    Abstract: A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.
    Type: Application
    Filed: July 23, 2013
    Publication date: January 29, 2015
    Inventors: Michael KRENZER, Thomas KUNSTMANN, Eva-Maria HESS, Manfred FRANK
  • Porous metal etching
    Patent number: 8932476
    Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: January 13, 2015
    Assignee: Infineon Technologies AG
    Inventors: Thomas Kunstmann, Stefan Willkofer, Anja Gissibl, Johann Strasser, Matthias Mueller, Eva-Maria Hess
  • Porous Metal Etching
    Publication number: 20140217062
    Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
    Type: Application
    Filed: February 7, 2013
    Publication date: August 7, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Kunstmann, Stefan Willkofer, Anja Gissibl, Johann Strasser, Matthias Mueller, Eva-Maria Hess