Patents by Inventor Eva Strzelecka

Eva Strzelecka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7432118
    Abstract: A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The VCSEL further includes first and second mirrors that are separated by an optical path of at least one wavelength. Furthermore, the oxide insulating region beneficially has a optical path of less than ¼ wavelength. The ion implanted spatial region is beneficially concentrically aligned with the oxide insulating region.
    Type: Grant
    Filed: June 6, 2005
    Date of Patent: October 7, 2008
    Assignee: Finisar Corporation
    Inventors: James A. Cox, Eva Strzelecka
  • Publication number: 20050233486
    Abstract: A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The VCSEL further includes first and second mirrors that are separated by an optical path of at least one wavelength. Furthermore, the oxide insulating region beneficially has a optical path of less than ¼ wavelength. The ion implanted spatial region is beneficially concentrically aligned with the oxide insulating region.
    Type: Application
    Filed: June 6, 2005
    Publication date: October 20, 2005
    Inventors: James Cox, Eva Strzelecka
  • Patent number: 6904072
    Abstract: A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The VCSEL further includes first and second mirrors that are separated by an optical path of at least one wavelength. Furthermore, the oxide insulating region beneficially has a optical path of less than ¼ wavelength. The ion implanted spatial region is beneficially concentrically aligned with the oxide insulating region.
    Type: Grant
    Filed: December 28, 2001
    Date of Patent: June 7, 2005
    Assignee: Finisar Corporation
    Inventors: James A. Cox, Eva Strzelecka