Patents by Inventor Eva Tois
Eva Tois has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9514956Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.Type: GrantFiled: November 1, 2010Date of Patent: December 6, 2016Assignee: ASM INTERNATIONAL N.V.Inventors: Eva Tois, Suvi Haukka, Marko Tuominen
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Publication number: 20160222504Abstract: Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.Type: ApplicationFiled: February 2, 2016Publication date: August 4, 2016Inventors: Suvi P. Haukka, Eva Tois
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Publication number: 20160118262Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: July 29, 2015Publication date: April 28, 2016Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Publication number: 20150299848Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.Type: ApplicationFiled: April 15, 2015Publication date: October 22, 2015Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
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Patent number: 9127351Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: February 13, 2013Date of Patent: September 8, 2015Assignee: ASM International N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Publication number: 20150217330Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.Type: ApplicationFiled: February 3, 2015Publication date: August 6, 2015Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
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Patent number: 8993055Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: October 27, 2006Date of Patent: March 31, 2015Assignee: ASM International N.V.Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 8871617Abstract: In one aspect, methods of forming mixed metal thin films comprising at least two different metals are provided. In some embodiments, a mixed metal oxide thin film is formed by atomic layer deposition and subsequently reduced to a mixed metal thin film. Reduction may take place, for example, in a hydrogen atmosphere. The presence of two or more metals in the mixed metal oxide allows for reduction at a lower reduction temperature than the reduction temperature of the individual oxides of the metals in the mixed metal oxide film.Type: GrantFiled: March 9, 2012Date of Patent: October 28, 2014Assignee: ASM IP Holding B.V.Inventors: Viljami J. Pore, Eva Tois
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Publication number: 20120302055Abstract: In one aspect, methods of forming mixed metal thin films comprising at least two different metals are provided. In some embodiments, a mixed metal oxide thin film is formed by atomic layer deposition and subsequently reduced to a mixed metal thin film. Reduction may take place, for example, in a hydrogen atmosphere. The presence of two or more metals in the mixed metal oxide allows for reduction at a lower reduction temperature than the reduction temperature of the individual oxides of the metals in the mixed metal oxide film.Type: ApplicationFiled: March 9, 2012Publication date: November 29, 2012Applicant: ASM IP HOLDING B.V.Inventors: Viljami J. Pore, Eva Tois
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Publication number: 20110104906Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.Type: ApplicationFiled: November 1, 2010Publication date: May 5, 2011Applicant: ASM INTERNATIONAL N.V.Inventors: Eva Tois, Suvi Haukka, Marko Tuominen
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Patent number: 7824492Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.Type: GrantFiled: October 2, 2003Date of Patent: November 2, 2010Assignee: ASM International N.V.Inventors: Eva Tois, Suvi Haukka, Marko Tuominen
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Patent number: 7771534Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporizable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporized, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.Type: GrantFiled: December 22, 2006Date of Patent: August 10, 2010Assignee: ASM International N.V.Inventors: Eva Tois, Suvi Haukka, Marko Tuominen
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Patent number: 7771533Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2 with sufficiently short reaction times.Type: GrantFiled: December 4, 2000Date of Patent: August 10, 2010Assignee: ASM International N.V.Inventors: Eva Tois, Suvi Haukka, Marko Tuominen
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Publication number: 20070163488Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.Type: ApplicationFiled: December 22, 2006Publication date: July 19, 2007Inventors: Eva Tois, Suvi Haukka, Marko Tuominen
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Publication number: 20070148350Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: ApplicationFiled: October 27, 2006Publication date: June 28, 2007Inventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Publication number: 20070054048Abstract: A catalytic reactant with a low activation energy barrier for oxide formation can be used to facilitate atomic layer deposition type reactions at reduced temperatures, thus increasing the quality of the deposited films. An initial reaction with a catalytic reactant provides localized heat at the substrate surface in the vicinity of the reactant. This localized heat facilitates a second reaction and deposition of the desired thin film. The processes may be used to deposit arrays of nanodots.Type: ApplicationFiled: September 7, 2005Publication date: March 8, 2007Inventors: Suvi Haukka, Eva Tois
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Publication number: 20040065253Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.Type: ApplicationFiled: October 3, 2003Publication date: April 8, 2004Inventors: Eva Tois, Suvi Haukka, Marko Tuominen
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Publication number: 20030188682Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.Type: ApplicationFiled: August 27, 2002Publication date: October 9, 2003Applicant: ASM Microchemistry OYInventors: Eva Tois , Suvi Haukka , Marko Tuominen