Patents by Inventor Eva Wang

Eva Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trimming method of stacked structure by forming a trench
    Patent number: 12777866
    Abstract: A first wafer having a first portion closer to a first surface and a thicker second portion connected with the first portion and closer to the second surface opposite to the first surface is provided. A second wafer is provided to bond with the first wafer. An edge trimming process is performed to form a trench penetrating through the second wafer and extending beyond the first portion and extending into the second portion. After bonding dies to the second wafer, a filling material is formed over the dies and the first and second wafers, wrapping around and between the dies, covering the first and second wafers, and partially filling the trench. A wafer thinning process is performed to remove the second portion and partially remove the filling material in the trench to level the surface of the thinned first wafer with the surface of the thinned filling material.
    Type: Grant
    Filed: November 21, 2023
    Date of Patent: October 27, 2026
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-An Kuo, Eva Wang, Shi-Dong Hong, Chen-Sheng Lin, Chao-Wen Shih, Kuo-Chiang Ting
  • TRIMMING METHOD OF STACKED STRUCTURE AND STACKED STRUCTURE FORMED THEREFROM
    Publication number: 20250167150
    Abstract: A first wafer having a first portion closer to a first surface and a thicker second portion connected with the first portion and closer to the second surface opposite to the first surface is provided. A second wafer is provided to bond with the first wafer. An edge trimming process is performed to form a trench penetrating through the second wafer and extending beyond the first portion and extending into the second portion. After bonding dies to the second wafer, a filling material is formed over the dies and the first and second wafers, wrapping around and between the dies, covering the first and second wafers, and partially filling the trench. A wafer thinning process is performed to remove the second portion and partially remove the filling material in the trench to level the surface of the thinned first wafer with the surface of the thinned filling material.
    Type: Application
    Filed: November 21, 2023
    Publication date: May 22, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-An Kuo, Eva Wang, Shi-Dong Hong, Chen-Sheng Lin, Chao-Wen Shih, Kuo-Chiang Ting