Abstract: Technologies for ribbon field-effect transistors with variable nanoribbon numbers are disclosed. In an illustrative embodiment, a stack of semiconductor nanoribbons is formed, with each semiconductor nanoribbon having a source region, a channel region, and a drain region. Some or all of the channel regions can be selectively removed, allowing for the drive and/or leakage current to be tuned. In some embodiments, one or more of the semiconductor nanoribbons near the top of the stack can be removed. In other embodiments, one or more of the semiconductor nanoribbons at or closer to the bottom of the stack can be removed.

Abstract: Technologies for ribbon field-effect transistors with variable nanoribbon channel dimensions are disclosed. In an illustrative embodiment, a stack of semiconductor nanoribbons are formed, with each semiconductor nanoribbon having a source region, a channel region, and a drain region. Some or all of the channel regions can be selectively narrowed and/or thinned, allowing for the drive and/or leakage current to be tuned. In some embodiments, one or more of the semiconductor nanoribbons near the top of the stack can be narrowed and/or thinned. In other embodiments, one or more of the semiconductor nanoribbons at or closer to the bottom of the stack can be narrowed and/or thinned.

Abstract: IC structures with nanoribbon stacks without dielectric protection caps for top nanoribbons, and associated methods and devices, are disclosed. An example IC structure includes a stack of nanoribbons, an opening over the top nanoribbon of the stack of nanoribbons, and a gate electrode material in the opening, where the opening has a first portion, a second portion, and a third portion, the second portion is between the first portion and the third portion, and where a width of a portion of the gate electrode material in the second portion is smaller than a width of a portion of the gate electrode material in the first portion. In such an IC structure, a gate insulator on the sidewalls of the first portion of the opening is materially discontinuous from a gate insulator on the sidewalls of the third portion of the opening.

Abstract: Disclosed herein are transistor gate-channel arrangements with transistor gate stacks that include multiple dipole materials, and related methods and devices. For example, in some embodiments, a transistor gate-channel arrangement may include a channel material and a transistor gate stack. The transistor gate stack may include a gate electrode material and a gate dielectric material between the gate electrode material and the channel material, where the gate dielectric material includes a first dipole material and a second dipole material where one of the first and second dipole materials is a P-shifter dipole material and the other one is an N-shifter dipole material.

Abstract: A system and method for implementing a scale based order assignment and fulfillment system is provided. The method includes receiving (via a user interface from a user) a request for an item from an entity. A database comprising links between zones is scanned and in response, a unit is assigned to a zone associated with a location of the item. The assignment results in the transmission of digital instructions to an electronic scale apparatus located within the zone and associated with the unit. The digital instructions executed for activating the electronic scale apparatus to enable a user to dynamically fulfil the request for the first item.

Abstract: A scale-based order management and fulfillment system includes a computer system configured as an order manager, the computer system connected for electronic receipt of customer orders from one or more external devices or systems; and a plurality of scales within a store. The computer system is configured to dynamically process customer orders for fulfillment.

Abstract: Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.