Patents by Inventor Evan A. Clinton

Evan A. Clinton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ORDER MANAGEMENT AND FULFILLMENT SYSTEMS AND METHODS
    Publication number: 20230146863
    Abstract: A system and method for implementing a scale based order assignment and fulfillment system is provided. The method includes receiving (via a user interface from a user) a request for an item from an entity. A database comprising links between zones is scanned and in response, a unit is assigned to a zone associated with a location of the item. The assignment results in the transmission of digital instructions to an electronic scale apparatus located within the zone and associated with the unit. The digital instructions executed for activating the electronic scale apparatus to enable a user to dynamically fulfil the request for the first item.
    Type: Application
    Filed: November 22, 2022
    Publication date: May 11, 2023
    Inventors: Cherie BUHLER, Robert S. DAVIS, Evan CLINTON, James MEYER, Randy L. BLANKLEY, JR., Angel LOPEZ VILLEGAS
  • ORDER MANAGEMENT AND FULFILLMENT SYSTEMS AND METHODS
    Publication number: 20230035190
    Abstract: A scale-based order management and fulfillment system includes a computer system configured as an order manager, the computer system connected for electronic receipt of customer orders from one or more external devices or systems; and a plurality of scales within a store. The computer system is configured to dynamically process customer orders for fulfillment.
    Type: Application
    Filed: July 26, 2022
    Publication date: February 2, 2023
    Inventors: Cherie BUHLER, Robert S. DAVIS, Evan CLINTON, James MEYER, Randy L. BLANKLEY, JR., Angel LOPEZ VILLEGAS
  • System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux
    Patent number: 11319644
    Abstract: Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: May 3, 2022
    Assignee: Georgia Tech Research Corporation
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A. M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • SYSTEM AND METHOD FOR INCREASING GROUP III-NITRIDE SEMICONDUCTOR GROWTH RATE AND REDUCING DAMAGING ION FLUX
    Publication number: 20200141026
    Abstract: Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Application
    Filed: January 6, 2020
    Publication date: May 7, 2020
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A.M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux
    Patent number: 10526723
    Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: January 7, 2020
    Assignee: Georgia Tech Research Corporation
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A. M. Fabien, Brendan Patrick Gunning, Joseph J. Merola
  • System and Method for Increasing III-Nitride Semiconductor Growth Rate and Reducing Damaging Ion Flux
    Publication number: 20180135202
    Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.
    Type: Application
    Filed: June 16, 2016
    Publication date: May 17, 2018
    Inventors: William Alan Doolittle, Evan A. Clinton, Chloe A.M. Fabien, Brendan Patrick Gunning, Joseph J. Merola