Patents by Inventor Evan C. O'HARA

Evan C. O'HARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10535803
    Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: January 14, 2020
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Chan Seob Shin, Hyoung Jin Lim, Kyoung Wan Kim, Yeo Jin Yoon, Jacob J Richardson, Daniel Estrada, Evan C. O'Hara, Haoran Shi
  • Patent number: 10411164
    Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (?2?) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ?2? scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (?) scan, is equal to or less than 900 arc sec.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: September 10, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Chan Seob Shin, Keum Ju Lee, Seom Geun Lee, Myoung Hak Yang, Jacob J. Richardson, Evan C. O'Hara
  • Patent number: 10407315
    Abstract: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: September 10, 2019
    Assignee: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Jacob J. Richardson, Evan C. O'Hara
  • Publication number: 20190048488
    Abstract: A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
    Type: Application
    Filed: October 19, 2018
    Publication date: February 14, 2019
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Daniel Estrada
  • Patent number: 10106909
    Abstract: A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: October 23, 2018
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Daniel Estrada
  • Publication number: 20180294384
    Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.
    Type: Application
    Filed: June 12, 2018
    Publication date: October 11, 2018
    Inventors: Chan Seob SHIN, Hyoung Jin LIM, Kyoung Wan KIM, Yeo Jin YOON, Jacob J RICHARDSON, Daniel ESTRADA, Evan C. O'HARA, Haoran SHI
  • Patent number: 10020425
    Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: July 10, 2018
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Chan Seob Shin, Hyoung Jin Lim, Kyoung Wan Kim, Yeo Jin Yoon, Jacob J Richardson, Daniel Estrada, Evan C. O'Hara, Haoran Shi
  • Publication number: 20170297921
    Abstract: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
    Type: Application
    Filed: April 14, 2016
    Publication date: October 19, 2017
    Inventors: Jacob J. Richardson, Evan C. O'Hara
  • Publication number: 20170297922
    Abstract: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
    Type: Application
    Filed: April 14, 2016
    Publication date: October 19, 2017
    Inventors: Jacob J. Richardson, Evan C. O'Hara
  • Publication number: 20170297920
    Abstract: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
    Type: Application
    Filed: April 14, 2016
    Publication date: October 19, 2017
    Inventors: Jacob J. Richardson, Evan C. O'Hara
  • Publication number: 20170260643
    Abstract: A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
    Type: Application
    Filed: May 26, 2017
    Publication date: September 14, 2017
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Daniel Estrada
  • Patent number: 9702054
    Abstract: A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: July 11, 2017
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Daniel Estrada
  • Publication number: 20170069797
    Abstract: Briefly, an embodiment comprises fabricating and/or uses of one or more zinc oxide crystals to form a transparent conductive structure.
    Type: Application
    Filed: September 4, 2015
    Publication date: March 9, 2017
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Chanseob Shin
  • Publication number: 20160218244
    Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.
    Type: Application
    Filed: September 25, 2013
    Publication date: July 28, 2016
    Inventors: Chan Seob SHIN, Hyoung Jin LIM, Kyoung Wan KIM, Yeo Jin YOON, Jacob J. RICHARDSON, Daniel ESTRADA, Evan C. O'HARA, Haoran SHI
  • Publication number: 20160130719
    Abstract: A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
    Type: Application
    Filed: November 10, 2014
    Publication date: May 12, 2016
    Inventors: Jacob J. Richardson, Evan C. O'Hara, Daniel Estrada
  • Patent number: 8796693
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: August 5, 2014
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Daniel Estrada, Evan C. O'Hara, Haoran Shi, Shin Chanseob, Yeojin Yoon
  • Publication number: 20140175452
    Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.
    Type: Application
    Filed: December 26, 2012
    Publication date: June 26, 2014
    Applicant: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Jacob J. RICHARDSON, Daniel ESTRADA, Evan C. O'HARA, Haoran SHI, Shin CHANSEOB, Yeojin YOON